JPH02257123A - Thin film type nonlinear element - Google Patents
Thin film type nonlinear elementInfo
- Publication number
- JPH02257123A JPH02257123A JP1079014A JP7901489A JPH02257123A JP H02257123 A JPH02257123 A JP H02257123A JP 1079014 A JP1079014 A JP 1079014A JP 7901489 A JP7901489 A JP 7901489A JP H02257123 A JPH02257123 A JP H02257123A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- contg
- oxide film
- metal oxide
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 11
- 239000010408 film Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 22
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 22
- 150000004767 nitrides Chemical class 0.000 claims description 16
- 239000012212 insulator Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 13
- 150000002739 metals Chemical class 0.000 abstract description 12
- 229910045601 alloy Inorganic materials 0.000 abstract description 10
- 239000000956 alloy Substances 0.000 abstract description 10
- 230000006866 deterioration Effects 0.000 abstract description 2
- 239000011810 insulating material Substances 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910004156 TaNx Inorganic materials 0.000 description 4
- 239000010953 base metal Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野１ 本発明は薄膜非線形素子に関する。[Detailed description of the invention] [Industrial application field 1 The present invention relates to a thin film nonlinear element.
［従来の技術］
第１図にＭＩＭ素子の平面構造を示す。１は接続電極、
２は酸化金属絶縁膜、３は接続電極、４は透明電極、５
は下地金属酸化膜、６はＭＩＭ素子を形成する基板であ
る。[Prior Art] FIG. 1 shows a planar structure of an MIM element. 1 is a connecting electrode,
2 is a metal oxide insulating film, 3 is a connection electrode, 4 is a transparent electrode, 5
6 is a base metal oxide film, and 6 is a substrate on which an MIM element is formed.
従来より、ＭＩＭ素子の絶縁膜に、ＴａＮｘ又はＴａＮ
ｘを含むＴａの酸化膜を用いて、ＭＩＭ素子の電流−電
圧特性（以下Ｉ−Ｖ特性と呼ぶ）の非線形性を向上させ
、素子容量を低減させるというアイディアがあった。Ｍ
ＩＭ素子等の非線形素子を、液晶デイスプレーの液晶駆
動スイッチとして用いる場合、素子の非線形性が大きく
、容量は小さいことが望まれる。Conventionally, TaNx or TaN has been used in the insulating film of MIM elements.
There was an idea to use a Ta oxide film containing x to improve the nonlinearity of the current-voltage characteristics (hereinafter referred to as IV characteristics) of an MIM element and reduce the element capacitance. M
When a nonlinear element such as an IM element is used as a liquid crystal drive switch of a liquid crystal display, it is desired that the element has high nonlinearity and small capacitance.
［発明が解決しようとする課題］
しかしながら、従来のように、ＭＩＭ素子の絶縁膜に、
単にＴａＮｘ又はＴａＮｘを含むＴａの酸化膜を用いる
と、素子特性が不安定となり、非常に破壊されやすくな
ってしまう。第３図は、前記ＭＩＭ素子の絶縁膜に、Ｔ
ａＮｘ又はＴａＮｘを含むＴａの酸化膜を用いた時のＩ
−Ｖ特性である。横軸はＭＩＭ素子に印加される電圧、
縦軸は１０ｇ（ＭＩＭ素子に流れる電流／電圧）である
。同一素子のＩ−Ｖ特性を数回測定すると、Ｉ−Ｖ特性
は、９→１０→１１→１２のごとく素子持性が変化し、
最終的には単なる絶縁体となり、非線形素子としての役
割を果たさなくなる。[Problem to be solved by the invention] However, as in the past, insulating films of MIM elements,
If TaNx or a Ta oxide film containing TaNx is simply used, the device characteristics will become unstable and it will be extremely susceptible to destruction. FIG. 3 shows that T is applied to the insulating film of the MIM element.
I when using a Ta oxide film containing aNx or TaNx
-V characteristic. The horizontal axis is the voltage applied to the MIM element,
The vertical axis is 10 g (current/voltage flowing through the MIM element). When the I-V characteristics of the same element are measured several times, the I-V characteristics change as shown in the order of 9→10→11→12.
Ultimately, it becomes a mere insulator and no longer functions as a nonlinear element.
従って、初期的には良い特性を示すのだが、不安定さの
ために実用化はできなかった。Therefore, although it initially showed good characteristics, it could not be put into practical use due to instability.
そこで本発明は、このような問題点を解決するもので、
その目的とするところは、素子特性が経時的に劣下する
ことなく、非線形性が向上し、素子容量を低減させた薄
膜非線形素子を提供することにある。Therefore, the present invention aims to solve these problems.
The purpose is to provide a thin film nonlinear element with improved nonlinearity and reduced element capacitance without deterioration of element characteristics over time.
〔課題を解決するための手段１
本発明の薄膜非線形素子は、゛導体−絶縁体−導体”構
造の薄膜非線形素子（Ｍ Ｉ Ｍ素子）において、前記
絶縁体材料に、窒化金属が混在している金属酸化膜を用
い、且つ前記素子の下地膜として、窒化金属が混在して
いる金属酸化物が形成されたことを特徴とする。[Means for Solving the Problems 1] The thin film nonlinear element of the present invention is a thin film nonlinear element (MIM element) having a "conductor-insulator-conductor" structure, in which metal nitride is mixed in the insulator material. The present invention is characterized in that a metal oxide film in which metal nitride is mixed is formed as a base film of the element.
以下に本発明の一実施例を説明する。第２図（ａ）、（
ｂ）は本実施例によるＭＩＭ素子を示す図である、下地
金属酸化膜５は第２図（ａ）のように、基板６の全面あ
るいは、第２図（ｂ）のように、ＭＩＭ素子直下付近に
形成されている。An embodiment of the present invention will be described below. Figure 2 (a), (
b) is a diagram showing the MIM element according to this embodiment. The base metal oxide film 5 is formed on the entire surface of the substrate 6 as shown in FIG. 2(a), or directly under the MIM element as shown in FIG. 2(b). It is formed nearby.
次に下地酸化膜の形成方法のいくつかを詳述する。Next, some methods for forming the base oxide film will be described in detail.
ａ）Ａｌ、Ｔｉ、Ｎｂ、Ｔａ等の金属、又はこれらの金
属を含む合金を、窒素を含む雰囲気中で基板にスパッタ
し、基板上に形成された金属膜を、熱酸化し、酸化膜中
に窒化金属が混在した金属酸化膜を形成する。a) Metals such as Al, Ti, Nb, and Ta, or alloys containing these metals, are sputtered onto a substrate in an atmosphere containing nitrogen, and the metal film formed on the substrate is thermally oxidized to form an oxide film. A metal oxide film mixed with metal nitride is formed.
ｂ）ＡＩ、Ｔｉ、Ｎｂ、Ｔａ等の金属、又はこれらの金
属を含む合金を、窒素、酸素を含む雰囲気中で基板に反
応性スパッタを行ない、基板上に、窒化金属が混在する
金属酸化膜を形成する。b) Reactive sputtering of metals such as AI, Ti, Nb, Ta, etc., or alloys containing these metals onto a substrate in an atmosphere containing nitrogen and oxygen forms a metal oxide film containing metal nitride on the substrate. form.
ｃ）ＡＩ、Ｔｉ、Ｎｂ、Ｔａ等の金属、又はこれらの金
属を含む合金の、酸化金属を、窒素を含む雰囲気中で基
板にスパッタし、窒化金属が混在する金属酸化膜を形成
する。c) A metal oxide of a metal such as AI, Ti, Nb, Ta, or an alloy containing these metals is sputtered onto the substrate in an atmosphere containing nitrogen to form a metal oxide film containing metal nitride.
ｄ）Ａｌ、Ｔ１、Ｎｂ、Ｔａ等、又はこれらの金属を含
む合金の窒化金属を基板上にスパッタし、熱酸化し、窒
化金属が混在する金属酸化膜を形成する。d) A metal nitride of Al, T1, Nb, Ta, etc. or an alloy containing these metals is sputtered onto the substrate and thermally oxidized to form a metal oxide film containing metal nitride.
ｅ）ＡＩ、Ｔｉ、Ｎｂ、Ｔａ等、又はこれらの金属を含
む合金の窒化金属を、酸素を含む雰囲気中で基板上に反
応性スパックし、窒化金属が混在する金属酸化膜を形成
する。e) A metal nitride of AI, Ti, Nb, Ta, etc. or an alloy containing these metals is reactively spun onto the substrate in an atmosphere containing oxygen to form a metal oxide film in which metal nitride is mixed.
ｆ）窒化金属を含む、Ａ１．Ｔｉ、Ｎｂ、Ｔａ等又はこ
れらの金属の合金の酸化金属を基板上にスパッタし、窒
化金属を含む金属酸化膜を形成する。次にＭＩＭ素子の
絶縁膜の形成方法のいくつかを詳述する。f) A1. containing metal nitride. A metal oxide film such as Ti, Nb, Ta, or an alloy of these metals is sputtered onto the substrate to form a metal oxide film containing metal nitride. Next, some methods for forming an insulating film of an MIM element will be described in detail.
ａ）前記の方法で形成した下地膜上に、ＡＩ、Ｔｉ、Ｎ
ｂ、Ｔａ等、又はこれらの金属を含む合金を、窒素を含
む雰囲気中でスパックし、熱酸化又は陽極酸化する。a) On the base film formed by the above method, AI, Ti, N
b, Ta, etc., or alloys containing these metals are spun in an atmosphere containing nitrogen and subjected to thermal oxidation or anodic oxidation.
ｂ）前記の方法で形成した下地膜上に、ＡＩ、Ｔｉ、Ｎ
ｂ、Ｔａ等、又はこれらの金属を含む合金の、窒化金属
をスパッタし、熱酸化又は陽極酸化する。以上のような
方法で形成した下地膜、及び、絶縁膜を用いてＭＩＭ素
子を形成すると、非線形性が良好で、素子容量が小さく
、素子特性が非常に安定したＭＩＭ素子を得ることがで
きた。b) AI, Ti, N on the base film formed by the above method.
A metal nitride of b, Ta, etc., or an alloy containing these metals is sputtered and thermally oxidized or anodized. By forming an MIM element using the base film and insulating film formed by the method described above, it was possible to obtain an MIM element with good nonlinearity, small element capacitance, and extremely stable element characteristics. .
［発明の効果］
以上述べたように、ＭＩＭ素子の絶縁材料に窒化金属が
混在する金属酸化膜を用い、ＭＩＭ素子の下に窒化金属
が混在する金属酸化膜を形成することによって、非線形
性が良く、容量の小さく、素子特性が非常に安定したＭ
ＩＭ素子を得ることができる。このようなＭＩＭ素子を
、液晶デイスプレーの駆動用スイッチとして用いると、
非常に高画質なデイスプレィを作ることができる。[Effects of the Invention] As described above, by using a metal oxide film mixed with metal nitride as the insulating material of the MIM element and forming a metal oxide film mixed with metal nitride under the MIM element, nonlinearity can be reduced. M with good performance, small capacitance, and extremely stable device characteristics.
An IM element can be obtained. When such a MIM element is used as a drive switch for a liquid crystal display,
It is possible to create extremely high-quality displays.
第１図は本発明の薄膜非線形素子の平面図。
第２図（ａ）、（ｂ）は本発明の薄膜非線形素子の一実
施例の要部断面図。
第３図は従来の薄膜非線形素子のＩ−Ｖ特性を示す図。
１・・・接続電極
２・・・酸化金属絶縁膜
接続電極
・透明電極
・下地金属酸化膜
・基板
以
上FIG. 1 is a plan view of the thin film nonlinear element of the present invention. FIGS. 2(a) and 2(b) are sectional views of essential parts of an embodiment of the thin film nonlinear element of the present invention. FIG. 3 is a diagram showing the IV characteristics of a conventional thin film nonlinear element. 1... Connection electrode 2... Metal oxide insulating film connection electrode, transparent electrode, base metal oxide film, substrate or more
Claims (1)
おいて、前記絶縁体の材料に、窒化金属が混在している
金属酸化膜を用い、且つ前記素子の下地膜として、窒化
金属が混在している金属酸化膜が形成されたことを特徴
とする薄膜非線形素子。In a thin film nonlinear element having a "conductor-insulator-conductor" structure, a metal oxide film mixed with metal nitride is used as the material of the insulator, and a metal oxide film mixed with metal nitride is used as the base film of the element. A thin film nonlinear element characterized by having a metal oxide film formed thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1079014A JPH02257123A (en) | 1989-03-30 | 1989-03-30 | Thin film type nonlinear element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1079014A JPH02257123A (en) | 1989-03-30 | 1989-03-30 | Thin film type nonlinear element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02257123A true JPH02257123A (en) | 1990-10-17 |
Family
ID=13678092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1079014A Pending JPH02257123A (en) | 1989-03-30 | 1989-03-30 | Thin film type nonlinear element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02257123A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0610082A2 (en) * | 1993-02-03 | 1994-08-10 | Sharp Kabushiki Kaisha | A two-terminal nonlinear device |
| US5654207A (en) * | 1903-02-03 | 1997-08-05 | Sharp Kabushiki Kaisha | Method of making two-terminal nonlinear device and liquid crystal apparatus including the same |
| WO1999007027A1 (en) * | 1997-07-31 | 1999-02-11 | Sharp Kabushiki Kaisha | Thin-film two-terminal elements, method of production thereof, and liquid crystal display |
| US6462802B1 (en) | 1998-01-19 | 2002-10-08 | Hitachi, Ltd. | Liquid crystal display device having wiring layer made of nitride of Nb or nitride alloy containing Nb as a main component |
-
1989
- 1989-03-30 JP JP1079014A patent/JPH02257123A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5654207A (en) * | 1903-02-03 | 1997-08-05 | Sharp Kabushiki Kaisha | Method of making two-terminal nonlinear device and liquid crystal apparatus including the same |
| EP0610082A2 (en) * | 1993-02-03 | 1994-08-10 | Sharp Kabushiki Kaisha | A two-terminal nonlinear device |
| US5442224A (en) * | 1993-02-03 | 1995-08-15 | Sharp Kabushiki Kaisha | Two-terminal mim device having stable non-linearity characteristics and a lower electrode of thin TA film doped with nitrogen |
| EP0610082A3 (en) * | 1993-02-03 | 1995-11-22 | Sharp Kk | A two-terminal nonlinear device. |
| WO1999007027A1 (en) * | 1997-07-31 | 1999-02-11 | Sharp Kabushiki Kaisha | Thin-film two-terminal elements, method of production thereof, and liquid crystal display |
| US6350557B1 (en) | 1997-07-31 | 2002-02-26 | Sharp Kabushiki Kaisha | Thin-film two-terminal elements, method of production thereof, liquid crystal display |
| US6462802B1 (en) | 1998-01-19 | 2002-10-08 | Hitachi, Ltd. | Liquid crystal display device having wiring layer made of nitride of Nb or nitride alloy containing Nb as a main component |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH02257123A (en) | Thin film type nonlinear element | |
| KR970011971A (en) | Liquid crystal display | |
| KR100505515B1 (en) | Two-terminal type-linear element, manufacturing method thereof and liquid crystal display panel | |
| JPS63166236A (en) | Electronic device | |
| JP2795883B2 (en) | Nonlinear element in liquid crystal display | |
| WO1994018600A1 (en) | Non-linear resistance element, method of its manufacture, and liquid crystal display | |
| JP3306986B2 (en) | Liquid crystal device manufacturing method | |
| JPH0345930A (en) | Two-terminal type nonlinear element | |
| JP2795898B2 (en) | Method for manufacturing MSI type nonlinear switching element | |
| JP3166317B2 (en) | Method of manufacturing electrical device | |
| JP3341346B2 (en) | Manufacturing method of nonlinear element | |
| JPH02304534A (en) | Display device driving nonlinear element | |
| JPS60227229A (en) | Liquid crystal display element | |
| JP3956463B2 (en) | Two-terminal nonlinear element, method for manufacturing the same, and liquid crystal display device | |
| JPH03292701A (en) | Non-linear resistance element | |
| JP3881737B2 (en) | Manufacturing method of two-terminal nonlinear element | |
| JP2695827B2 (en) | Matrix array substrate | |
| JP3303345B2 (en) | Liquid crystal display panel manufacturing method | |
| JPH01283524A (en) | Liquid crystal display device | |
| JP3200971B2 (en) | Liquid crystal display panel and method of manufacturing the same | |
| JPH11249175A (en) | Active matrix substrate, production thereof and liquid crystal display panel | |
| KR19980015706A (en) | TFT substrate having a source / drain electrode made of an alloy | |
| JPH04217378A (en) | Non-linear type thin film device and manufacture thereof | |
| JPH01281435A (en) | Liquid crystal display device | |
| JPH0980486A (en) | Nonlinear resistance element |