JPH02246166A - Infrared detector - Google Patents
Infrared detectorInfo
- Publication number
- JPH02246166A JPH02246166A JP1065901A JP6590189A JPH02246166A JP H02246166 A JPH02246166 A JP H02246166A JP 1065901 A JP1065901 A JP 1065901A JP 6590189 A JP6590189 A JP 6590189A JP H02246166 A JPH02246166 A JP H02246166A
- Authority
- JP
- Japan
- Prior art keywords
- metal wiring
- detection element
- adhesive
- insulating film
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000000853 adhesive Substances 0.000 abstract description 19
- 230000001070 adhesive effect Effects 0.000 abstract description 19
- 238000001514 detection method Methods 0.000 abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 abstract description 3
- 229910000423 chromium oxide Inorganic materials 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010931 gold Substances 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
半導体の検知素子を備えた赤外線検知器に関し、検知素
子の接着時に、接着剤が金属配線間の溝に沿って流れ込
むのを防止できるようにすることを目的とし、
複数本の金属配線が形成された筒状絶縁性基台の上面に
半導体の検知素子を接着してなる赤外線検知器において
、前記検知素子を接着する領域の近傍にある、少なくと
も前記複数本の金属配線間の溝を絶縁膜で覆うように構
成する。[Detailed Description of the Invention] [Summary] Regarding an infrared detector equipped with a semiconductor detection element, an object of the present invention is to prevent adhesive from flowing along the grooves between metal wirings when bonding the detection element. In an infrared detector in which a semiconductor sensing element is adhered to the upper surface of a cylindrical insulating base on which a plurality of metal wirings are formed, at least the plurality of The structure is such that the groove between the metal wirings of the book is covered with an insulating film.
本発明は、半導体の検知素子を備えた赤外線検知器に関
する。The present invention relates to an infrared detector equipped with a semiconductor sensing element.
近年、この種の赤外線検知器では、検知素子の高密度化
が要求されるようになり、これに伴って、検知素子の周
囲に形成される金属配線も高密度化が要望されている。In recent years, in this type of infrared detector, there has been a demand for higher density sensing elements, and with this, there has also been a demand for higher density metal wiring formed around the sensing elements.
（従来の技術）
従来の赤外線検知器の内部構成は、第３図に示すように
、熱伝導性の良好なガラス等でできた筒状の絶縁性基台
１の上面１ａから側面１ｂにかけて、金（Ａ ｕ ）等
でできた複数本の金属配線２を形成すると共に、上記の
上面１ａの中央部に半導体の検知素子３を熱伝導性°の
良好な接着剤で直接に接着してなっている。そして、図
には示していないが、検知素子３と金属配線２とがワイ
ヤボンディング等によって接合された後、壱の全体はガ
ラス等でできた筒状の外部容器内に組み込まれ、この外
部容器の先端部に設けられた窓部を透過してきた赤外線
を検知素子３で検知できるようになっている。また、上
記絶縁性基台１は、その下端を開口部とする円筒であり
、その内部に液体窒素等を入れて冷却することにより、
検知素子３を低温に保って動作可能な状態にする。(Prior Art) As shown in FIG. 3, the internal structure of a conventional infrared detector is as follows: A plurality of metal wirings 2 made of gold (A u ) or the like are formed, and a semiconductor sensing element 3 is directly bonded to the center of the upper surface 1a using an adhesive with good thermal conductivity. ing. Although not shown in the figure, after the sensing element 3 and the metal wiring 2 are bonded by wire bonding or the like, the entire part 1 is assembled into a cylindrical outer container made of glass or the like. The detection element 3 can detect the infrared rays that have passed through the window provided at the tip of the sensor. The insulating base 1 is a cylinder with an opening at its lower end, and by cooling it by putting liquid nitrogen or the like inside it,
The sensing element 3 is kept at a low temperature to be in an operable state.
上記従来の赤外線検知器では、基台１の上面１ａに形成
されている複数の金属配線２間が高密度化に伴って狭く
なっており、しかもその間がなにものによっても覆われ
ておらず、すなわち金属配線２によって挟まれた位置に
狭い溝４ができている。そのため、検知素子３を上面１
ａに接着する際、第４図中に矢印で示すように接着剤５
が上記の溝４を伝わって流れ込み、第５図に示すように
金属配線２上にまで上がってくる。すると、接着剤５が
金属配線２上のボンディング領域にまで広がってしまい
、その後のワイヤボンディングでワイヤが接合されなか
ったり、たとえワイヤが接合されても導通不良になって
しまう等の問題が生じた。In the above-mentioned conventional infrared detector, the spaces between the plurality of metal wirings 2 formed on the top surface 1a of the base 1 are becoming narrower as the density increases, and the space between them is not covered by anything. That is, a narrow groove 4 is formed at a position sandwiched by the metal wiring 2. Therefore, the detection element 3 is placed on the top surface 1.
When adhering to a, apply the adhesive 5 as shown by the arrow in Figure 4.
flows through the groove 4 and rises above the metal wiring 2 as shown in FIG. Then, the adhesive 5 spread to the bonding area on the metal wiring 2, causing problems such as the wires not being bonded during subsequent wire bonding, or even if the wires were bonded, there would be poor conduction. .
本発明は、検知素子の接着時に、接着剤が金属配線間の
溝に沿って流れ込むのを防止できるようにすることを目
的とする。An object of the present invention is to prevent adhesive from flowing along the grooves between metal wirings when bonding sensing elements.
本発明の赤外線検知器は、半導体の検知素子を接着する
領域の近傍であって、少なくとも金属配線間の溝を、５
ｉ０２膜等の絶縁膜で覆ったことを特徴とする。勿論、
上記の溝の他に、金属配線の表面をも絶縁膜で覆うよう
にしてもよい。The infrared detector of the present invention has at least 5 grooves between metal wirings in the vicinity of the area where the semiconductor sensing element is bonded.
It is characterized by being covered with an insulating film such as an i02 film. Of course,
In addition to the above groove, the surface of the metal wiring may also be covered with an insulating film.
検知素子の接着領域の近傍では、金属配線間の溝が絶縁
膜で埋まる。そのため、検知素子を接着した場合、その
接着領域からはみ出た接着剤は上記絶縁膜を乗り越える
ことができず、よって従来のように溝を伝わって流れ込
むようをことがなくなる。従って、金属配線上のボンデ
ィング領域には接着剤が付着せず、導通状態の良好な確
実なボンディングが可能になる。In the vicinity of the bonding area of the sensing element, the groove between the metal wirings is filled with an insulating film. Therefore, when the sensing element is bonded, the adhesive that protrudes from the bonded area cannot overcome the insulating film, and therefore does not flow through the groove as in the conventional case. Therefore, no adhesive adheres to the bonding area on the metal wiring, making it possible to perform reliable bonding with good conductivity.
以下、本発明の実施例について、図面を参照しながら説
明する。Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例に係る赤外線検知器の平面図
であり、第２図はそのＢ−Ｂ拡大断面図である。FIG. 1 is a plan view of an infrared detector according to an embodiment of the present invention, and FIG. 2 is an enlarged sectional view taken along line BB.
第１図において、前述した第３図に示したのと同じく熱
伝導性の良好なガラス等でできた筒状の絶縁性基台ｌの
上面１ａには、金（Ａｕ）等でできた複数本の金属配線
２が形成されている。このような金属配線２は、例えば
、上面１ａの全面に金等の金属膜を蒸着し、これにレー
ザーカット等により溝４を彫って金属膜を互いに分離さ
せることにより、形成することができる。また、上記の
上面１ａの中央部には、半導体でできた検知素子３が、
熱伝導性の良好な接着剤で直接に接着されている。In FIG. 1, the upper surface 1a of the cylindrical insulating base L made of glass or the like having good thermal conductivity, as shown in FIG. A real metal wiring 2 is formed. Such a metal wiring 2 can be formed, for example, by depositing a metal film such as gold on the entire surface of the upper surface 1a, and carving grooves 4 therein by laser cutting or the like to separate the metal films from each other. Further, in the center of the upper surface 1a, a detection element 3 made of a semiconductor is provided.
It is directly bonded with an adhesive that has good thermal conductivity.
更に、上記検知素子３の接着領域の近傍、すなわちボン
ディング領域６よりも検知素子３に近い側の領域では、
第２図に明らかなように、金属配線２０表面と、その間
の溝４とが、酸化シリコン（Ｓｔｏｗ）や酸化クロム等
の絶縁膜７によって覆われている。このような絶縁膜７
は、金属配線２を形成した後に、例えば、レジスト（も
しくはメタルマスク）をマスクとして酸化シリコンを上
記接着領域近傍にのみ蒸着したり、或いはクロム（Ｃｒ
）を上記接着領域近傍にのみ選択的に蒸着し、これを後
から酸化させて酸化クロムにすること等により、形成す
ることができる。Furthermore, in the vicinity of the bonding area of the sensing element 3, that is, in the area closer to the sensing element 3 than the bonding area 6,
As is clear from FIG. 2, the surface of the metal wiring 20 and the groove 4 between them are covered with an insulating film 7 made of silicon oxide (Stow), chromium oxide, or the like. Such an insulating film 7
After forming the metal wiring 2, for example, silicon oxide is deposited only in the vicinity of the bonding area using a resist (or metal mask), or chromium (Cr) is deposited only in the vicinity of the bonding area.
) can be formed by selectively depositing only in the vicinity of the adhesive area and oxidizing it later to form chromium oxide.
また、図には示していないが、従来と同様に、検知素子
３と金属配線２とがワイヤボンディングによって接合さ
れた後、その全体は筒状の外部容器内に組み込まれ、こ
の外部容器先端の窓を透過して外部から入ってきた赤外
線を検知素子３で検知できるように構成される。Although not shown in the figure, after the sensing element 3 and the metal wiring 2 are bonded together by wire bonding, the entire body is assembled into a cylindrical outer container, and the tip of this outer container is It is configured so that the detection element 3 can detect infrared rays transmitted from the outside through the window.
本実施例によれば、検知素子３の接着領域の近傍におい
て、金属配線２間の溝４が絶縁膜７で埋まっているため
、検知素子３の接着時に、その接着領域からはみ出た接
着剤の流れは絶縁膜７を乗り越えることができず、よっ
てその接着剤は金属配線２のない領域（第１図で検知素
子３の左右両側の領域）にのみ流れ込む、従って、金属
配線２上のボンディング領域には接着剤が流れ込まず、
よって従来のような導通不良等の問題が生じることはな
く、確実なボンディングが可能になる。また、検知素子
３の接着領域を両側から挟むように絶縁膜７を形成した
ので、検知素子３の実際の接着領域を絶縁膜７間に規定
することができ、よって接着時の位置ずれによる光学的
なずれをも防止することができる。According to this embodiment, the groove 4 between the metal wirings 2 is filled with the insulating film 7 in the vicinity of the bonding area of the sensing element 3, so that when the sensing element 3 is bonded, the adhesive that protrudes from the bonding area is The flow cannot overcome the insulating film 7, so the adhesive flows only into the area where there is no metal wiring 2 (the area on both the left and right sides of the sensing element 3 in FIG. 1), and therefore the bonding area on the metal wiring 2. The adhesive will not flow into the
Therefore, problems such as poor conduction as in the prior art do not occur, and reliable bonding becomes possible. Furthermore, since the insulating film 7 is formed so as to sandwich the bonding area of the sensing element 3 from both sides, the actual bonding area of the sensing element 3 can be defined between the insulating films 7. It is also possible to prevent misalignment.
なお、上記実施例では、絶縁膜７を溝４の他に金属配線
２の表面にも形成したが、少なくとも溝４が絶縁膜７で
埋まっていれば、接着剤の流れ込みを防止することがで
きる。Note that in the above embodiment, the insulating film 7 was formed on the surface of the metal wiring 2 in addition to the groove 4, but if at least the groove 4 is filled with the insulating film 7, the adhesive can be prevented from flowing. .
以上説明したように、本発明によれば、検知素子の接着
領域近傍にある金属配線間の溝を絶縁膜で埋めたことに
より、検知素子の接着時に、その接着剤が金属配線間の
溝に沿って流れ込むのを確実に防止することができる。As explained above, according to the present invention, by filling the grooves between the metal wirings near the bonding area of the sensing element with an insulating film, the adhesive fills the grooves between the metal wirings when the sensing element is bonded. It is possible to reliably prevent water from flowing along the surface.
それに伴い、金属配線上のボンディング領域には接着剤
が付着しなくなったので、導通状態の良好な確実なボン
ディングが可能になる。Accordingly, the adhesive no longer adheres to the bonding area on the metal wiring, making it possible to perform reliable bonding with good conductivity.
第１図は本発明の一実施例に係る赤外線検知器の平面図
、
第２図は第１図に示した赤外線検知器のＢ−Ｂ拡大断面
図、
第３図は従来の赤外線検知器の斜視図、第４図は第３図
に示した赤外線検知器の平面図、第５図は第４図に示し
た赤外線検知器のＡ−Ａ拡大断面図である。
ｌ・・・絶縁性基台、
２・・・金属配線、
３・・・検知素子、
４・・・溝、
７・・・絶縁膜。
本発明の−＊施イ列１；イ糸る赤外昶９史知器の平面口
第１図Fig. 1 is a plan view of an infrared detector according to an embodiment of the present invention, Fig. 2 is an enlarged cross-sectional view taken along line B-B of the infrared detector shown in Fig. 1, and Fig. 3 is a plan view of a conventional infrared detector. 4 is a plan view of the infrared detector shown in FIG. 3, and FIG. 5 is an enlarged cross-sectional view taken along line AA of the infrared detector shown in FIG. 4. 1... Insulating base, 2... Metal wiring, 3... Detection element, 4... Groove, 7... Insulating film. Figure 1 of the plane opening of the infrared 9th history detector of the present invention
Claims (1)
（１）の上面に半導体の検知素子（３）を接着してなる
赤外線検知器において、 前記検知素子を接着する領域の近傍にある、少なくとも
前記複数本の金属配線間の溝（４）を絶縁膜（７）で覆
ったことを特徴とする赤外線検知器。[Scope of Claims] An infrared detector comprising a semiconductor sensing element (3) adhered to the upper surface of a cylindrical insulating base (1) on which a plurality of metal wirings (2) are formed, the sensing element comprising: An infrared detector characterized in that at least a groove (4) between the plurality of metal wirings near a region where the metal wiring is bonded is covered with an insulating film (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1065901A JPH02246166A (en) | 1989-03-20 | 1989-03-20 | Infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1065901A JPH02246166A (en) | 1989-03-20 | 1989-03-20 | Infrared detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02246166A true JPH02246166A (en) | 1990-10-01 |
Family
ID=13300330
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1065901A Pending JPH02246166A (en) | 1989-03-20 | 1989-03-20 | Infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02246166A (en) |
-
1989
- 1989-03-20 JP JP1065901A patent/JPH02246166A/en active Pending
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