JPH02237054A - Compound type circuit device - Google Patents

Abstract

PURPOSE:To obtain a highly reliable compound type circuit device, in which a crack and the like are little generated, by a method wherein a glass ceramics substrate having a thermal expansion coefficient almost identical with that of an aluminum nitride substrate and the aluminum nitride substrate are jointed with each other. CONSTITUTION:As a AIN substrate 1, one having a thermal conductivity of 100w/mK or more is desirable for the heat dissipation of an IC bare chip 11 which is mounted on the substrate 1. As glass ceramics substrates 2 and 3, one having, for example, a thermal expansion coefficient of 43 to 63X10<-7> deg.C<-1>, a dielectric constant less than 9.0 and the characteristics of Au, Ag, Ag-Pd, Cu and Au-Pt conductors to be used is desirable as there is a need to form a circuit pattern. Moreover, if the substrates 2 and 3 is one having a thermal expansion coefficient almost identical with that of the substrate 1, the materials for the substrates 2 and 3 can be used without being specially limited. Thereby, the title device is superior in heat dissipation property, has a high reliability and moreover, a stress is hardly generated in a junction part in the device and a defect, such as a peeling and the like, is not generated in the junction part.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a composite circuit device.

[Conventional technology] Conventionally, aluminum nitride (AI
A method in which a metal layer for adhesion and a metal layer for buffering are provided between the N) substrate and the alumina (At■0,) substrate has been reported in Japanese Patent Application Laid-open No. 18687/1983, but the essential point is AIN substrate with different coefficient of thermal expansion and A1*Os
For bonding substrates, accelerated reliability testing, e.g.
When 1000 cycles were performed at +125°C to -50°C for 30 minutes, there was no peeling at the joint. This has the disadvantage that defects such as cracks occur and the airtightness deteriorates.

[Problems to be Solved by the Invention] The purpose of the present invention is to eliminate the above-mentioned drawbacks of the prior art, and to provide a novel composite circuit device that has not been known in the past. The purpose is to

[Means for Solving the Problems 1] The present invention has been made to solve the above-mentioned problems, and has a structure in which a glass ceramic substrate and an aluminum nitride substrate are bonded to each other, the thermal expansion of which is almost the same as that of the aluminum nitride substrate. The present invention provides a composite circuit device etc. characterized by the following.

The present invention will be explained in detail below. An object of the present invention is to create a highly reliable composite circuit device in which cracks and the like are less likely to occur by bonding a glass ceramic substrate having substantially the same coefficient of thermal expansion to an AIN substrate. Note that the glass-ceramic substrate is made of glass and ceramic filler. FIG. 1 shows a sectional view of a typical example of the composite circuit device of the present invention. In Figure 1, 1 is an AIN substrate, 2.3 is a glass ceramic substrate, and 4 is gold (Au).
) layer, 5 is the AIN substrate 1 and the glass ceramic substrate 2
, 6 is the opening of the glass ceramic substrate 2, and 7
is the side surface of the glass-ceramic substrate 2.3, 8 is the lead frame, 9 is the joint between the top cover and the glass-ceramic substrate 3, 10 is the opening of the glass-ceramic substrate 3, 11 is the bare IC chip, 12 is the wire 14 is the glass The top lid is made of ceramics.

The AIN substrate 1 preferably has a thermal conductivity of 100 w/mK or more in order to dissipate heat from the bare IC chip 11 mounted on the AIN substrate 1. Such A
As the IN board 1, for example, commercially available AGN-1 manufactured by Asahi Glass Co., Ltd.
．． AGN-2 (trademark) etc. can be used. Since it is necessary to form a circuit pattern on the glass-ceramic substrate 2.3, it is desirable that the glass-ceramic substrate 2.3 has the following characteristics, for example. Thermal expansion coefficient 43~63x 10-"C-' dielectric constant
Conductor used less than 9.0 Au (gold). Ag (silver), Ag-Pd
(silver-palladium), Cu (copper). Au-Pt (gold, platinum)? The glass ceramics 2.3 can be used without any particular material limitations as long as they have approximately the same coefficient of thermal expansion as the AIN substrate 1. To give an example, the above-mentioned AIN board A made by Asahi Glass ■
GN-1. AGN-2 has a coefficient of thermal expansion of approximately 45X10-
Since it is "C-", when this is used, the following compositions can be used as glass ceramics having almost the same coefficient of thermal expansion as these. Unless otherwise specified, % means % by weight.

SiO■ Alias MgO BaO CaO SrO B203 PbO ZnO TIOx+ZrO* LitO+ Na*O+ K*0 38-48% 1-8% 0-10% 18-28% 1-8% 0-15% 0.5-15% O ~20% IQ~20% 0~7% 0~5%? Glass frit 30~70% and refractory filler 28~
The refractory filler consists of 20-60% alumina, 0-40% zircon, 0-30% cordierite, and 0-30% forsterite.

Another example is glass frit 25-65% Al! 0. It is manufactured from a glass-ceramics substrate composition consisting of powder 0-60% and 2MgO SiO powder 5-60%, and the composition of the glass frit is SiOi 40-70%.
Al. A glass ceramic substrate or the like consisting of 0.034% to 15% Ba0315% to 35% Ba00.5% to 15% can be used.

If necessary, use Cen to remove organic binder.
An oxidizing agent such as t is added to the above composition. The glass ceramic substrate described above has a bending strength of 2000
kg/cm", but other glass-ceramic substrates with even better bending strength will be exemplified. Alumina (AIJs) 50-91% Si
Oz 5-30%Pb0
3~20%82os
O~15% alkaline earth metal oxide 0.
5-15% (MgO+CaO+SrO+BaO)T
i+Zr+Hf oxide 0-6% The coefficient of thermal expansion of this glass ceramic substrate is approximately 42-63X 1
0-'("C-')", and the above composition will be explained in order. related to reactivity with conductors.

If the alumina content is less than 50%, the reactivity between the glass-ceramic substrate and the surface conductor increases, which is undesirable because it impairs the solder wettability of the conductor, and if it exceeds 91%, the dielectric constant decreases to 9.0. This is not desirable as it will become more expensive. Furthermore, the greater the alumina content, the greater the bending strength of the glass ceramic substrate.

Considering the above points, the necessary range of alumina is 50 to 91
%. Further, a desirable range is 55 to 80%, and a particularly desirable range is 60 to 70%.

If SiOa is less than 5%, it becomes difficult to sinter the glass ceramic substrate, and if it is more than 30%, the bending strength decreases, so 5 to 30% is required. The desirable range is 1
The range is 0 to 20%, and a particularly desirable range is 15 to 19%.

If PbO is less than 3%, the glass ceramic substrate will have poor sintering, which is undesirable. If it is 20% or more, the dielectric constant of the glass ceramic substrate will become large, which is undesirable. The required range is 3. ~20%. A desirable range is 10-18%, and a particularly desirable range is 14-17%.

B20 is a flux component, and if it exceeds 15%, the water resistance decreases, so it is not preferable, and the necessary range is 0 to 1.
It is 5%. A desirable range is 0.5-5%, particularly a desirable range is 1-3%.

If the alkaline earth metal oxide content is less than 0.5%, sintering will be poor, which is not preferable. If it exceeds 15%, the dielectric constant of the glass ceramic substrate becomes large, which is not preferable. A desirable range is 1 to 5%, and a particularly desirable range is 1.5 to 3%.

The addition of Ti+Zr+Hf oxides is preferable because the coefficient of thermal expansion decreases, but if it exceeds 6%, the dielectric constant deteriorates, which is not preferable, and the desirable range is 3% or less. A particularly desirable range is 1% or less. Sho Ti+Z
Only one of these three oxides of r+Hf is sufficient.
, other oxides? It is not necessary to do so.

From the above, the desirable range of the composition of this glass-ceramic substrate is alumina (A1.03) 55-80%S
L0. 10-20%Pb0
10-18%B. 0.
0. 5-5% alkaline earth metal oxide 1-5% Ti+Zr+HfO-3%, particularly desirable range is alumina (AlOx) 60-70%S
L0215~19% Pb0 14~17%BzOs
1-3% alkaline earth metal oxide 1.5-3%+Zr+HfO-1%.

Note that a part of this glass-ceramic substrate composition is crystalline. Even if one non-quality or glassy phase or two or more of these phases coexist, the effects of the present invention remain unchanged.

Regarding this glass-ceramic substrate composition exemplified above, nitrate is added as a refining agent and a melt accelerator during glass melting, relative to the total amount of inorganic components. Arsenous acid, antimony oxide, sulfate, fluoride, chloride, etc. may be added in an amount of 0 to 5%.

Further, 0 to 5% of a coloring agent (for example, a heat-resistant inorganic pigment, a metal oxide) may be added.

Furthermore, as conductor materials, Cu, W, Mo-Mn
, When using metals that are oxidized in air such as Ni,
It is necessary to perform firing in an inert atmosphere such as nitrogen or a nitrogen-hydrogen atmosphere, and in that case, in order to promote debinding in the glass-ceramic substrate, Cr20s is added as an oxidizing agent to the glass-ceramic substrate composition. ,VJs
．． It is preferable to add CeOz, CoO, and SnOz in an amount of 0 to 10%, either singly or as a mixture, based on the total amount of inorganic components of the glass-ceramic substrate composition.

However, if the amount added exceeds 10%, will it become applicable? This is not preferable because it lowers the insulation resistance value of the glass ceramic substrate, and if it is less than 0.05%, binder removal will be difficult to promote.

A particularly desirable range of addition of the oxidizing agent according to the present invention is 0.5 to 5%, and a particularly desirable range is 1 to 3%. Furthermore, among the above five oxidizing agents, Cr*Os, CoO
is preferred, and CrxOs is particularly preferred. The ceramic substrate fired with the above-mentioned oxidizing agent has an inorganic component of substantially 50 to 91% alumina in terms of oxides.
SL0■5~30%, Pb0 3~20%, BgO
s O ~ 15%, alkaline earth metal oxides 0, 5 ~ 15
%, oxides of Ti+Zr+Hf O~6% and the total amount of the above inorganic components, substantially including chromium oxide in terms of CraOt, vanadium oxide in terms of V2O5, and cerium oxide in terms of CeO. In terms of conversion, cobalt oxide is converted to CoO, and tin oxide is converted to SnOz, which is composed of chromium oxide + vanadium oxide + cerium oxide + cobalt oxide + tin oxide O ~ 10%.

These glass ceramic substrates described above are manufactured, for example, as follows.

An organic binder is added to these glass-ceramic substrate compositions. Plasticizer. Add a solvent and knead to create a slurry. Examples of the organic binder include butyral resin and acrylic resin, and examples of the plasticizer include dibutyl phthalate and dioctyl phthalate. As the butylbenzyl phthalate and the solvent, commonly used ones such as toluene and alcohol can be used.

Next, this slurry is formed into a sheet and dried to create an unsintered sheet, a so-called green sheet. Next, holes for via holes etc. are made in this green sheet, and one side is coated with Cu, Ag, Ag-Pd, Au.
, Au-Pt. Ni, W, Mo-Mn, Mo
A paste such as the above is printed in a thick film onto a predetermined circuit. At this time, Cu. Ag. Ag-Pd, Au,
Filled with pastes such as Au-Pt, Ni, W, No-Mn, Mo, etc. Next, a predetermined number of these printed green sheets are stacked together and laminated by thermocompression bonding.
After firing, it becomes a multilayer glass-ceramic substrate.

The firing conditions include Ag-Pd, Au, Au-P
When using a t-conductor, the temperature is 600 to 1050℃ in air.
When using Cu, Ni, W, or Mo-Mn, the firing is performed at a temperature of 600 to 1400° C. in an inert atmosphere such as nitrogen or a nitrogen-hydrogen atmosphere.

The multilayer glass ceramic substrate manufactured as described above has circuits laminated in multiple layers with an insulating substrate interposed therebetween.

The above manufacturing explanation has been given for multilayer glass-ceramic substrates, but it is of course possible to manufacture single-layer ceramic substrates without the above-mentioned lamination. A glass ceramic substrate is used in the above composite circuit device.

When the above-mentioned AIN substrate 1 and the several types of glass-ceramic substrates 2 mentioned above are combined, if the thermal expansion coefficient of the AIN substrate l is β, and the thermal expansion coefficient of the glass-ceramic substrate 2 at 500° C. or less is a, then Thermal expansion coefficient difference 1α−β1≦
20X 10-'℃-1, AIN board and AIto
, the difference in thermal expansion coefficient with the substrate is 27 to 32 x 10 -y C, which is very small compared to 1, which is desirable. 1α−β1≦10x
1 (1-y°C-1 is more desirable in terms of reliability).

Among the above ranges, a particularly desirable range is 3 x 10-'°C.
−1≦α−β≦6 X to−? ℃-1.

FIG. 4 shows the thermal expansion coefficient versus temperature characteristics of the glass ceramic substrate and the AIN substrate. In Figure 4, Tg is the glass transition point at which glass begins to vitrify, and is 700 to 100.
It is within the range of 0°C and has a width of about 100°C. Further, T1 is the glass softening point. As shown in FIG. 4, the glass has a temperature of T. When the value exceeds 100%, the coefficient of thermal expansion increases by about 3 times. Because glass has such complex properties, the coefficient of thermal expansion of a glass-ceramic substrate containing glass is T.
It fluctuates between g or around Tg.

Therefore, the particularly desirable range of α and β is specified for this reason. When bonding the AIN substrate 1 and the glass-ceramic substrate 2 shown in Figure 1, whether you use silver solder or a glass layer for the joint 5, the temperature must be kept at about 800 to 1000°C. Not,
The particularly desirable range of α-β is effective in reducing the internal stress of the joint 5.

Due to the above-mentioned composite, there is no need to form a special metal layer in the joint part 5 to alleviate the difference in thermal expansion, and it is not necessary to form a special metal layer on the joint part 5 to alleviate the difference in thermal expansion. Sufficient reliability can be obtained using a glass bonding adhesive or the like. In the case of bonding with an adhesive, an epoxy adhesive, a polyimide adhesive, or the like can usually be used.

If α-β1 exceeds 20×10° C.-1, it is not preferable because a special structure is required to relieve the stress caused by the difference in coefficient of thermal expansion.

The composite circuit device of the present invention uses a glass-ceramic substrate 2.3 having openings 6 and 10 as shown in FIG. It has the advantage of requiring less amount of

The opening 6, IO is not limited to the factory. It may be a structure in which several Is are owned.

Furthermore, the dielectric constant of the glass ceramic substrate 2.3 is preferably less than 9.0 in order to prevent delay in signal transmission speed.

The lead frame 8 is usually made of Kovar (simplified standard), 42-alloy (trademark), or the like.

The composite circuit device shown in FIG. 1 described above is manufactured as follows.

FIG. 2 is a sectional view of each component showing the manufacturing procedure of the composite circuit device shown in FIG. 1. In Figure 2, 13 is a sealing glass. 15 is a gold plated portion formed on the lead frame 8.

A glass-ceramic substrate 2 having an opening 6 and an AIN substrate 1 are prepared, and a bonding portion 5 on the glass-ceramic substrate 2 is coated with silver (Ag) for bonding. Silver-palladium (Pd), copper (
A metal paste such as Cu) is formed by printing or the like and fired. Next, an Au base for the gold layer 4 for mounting the bare chip 11 is formed on the AIN substrate l by printing or the like, and the above metal paste for bonding is further formed by printing or the like. Then, it is fired at a temperature of 1000°C or less, and a silver solder or the like is formed by printing or coating on at least one of the joint parts 5 of the several types of glass-ceramic substrates 2 and the AIN substrate 1 described above, and heated. , the glass ceramic substrate 2 and the AIN substrate l are bonded. Note that soldering may be used instead of this silver soldering.

When using silver solder or solder, there is an advantage that the conductor on the glass ceramic substrate 2 and the conductor on the AIN substrate l can be electrically connected. A glass-ceramic substrate 3 having an AIN substrate 1 and a glass-ceramic substrate 2 and an opening 10 bonded in this way is manufactured, and at least one of the lower surface of the glass-ceramic substrate 3 and the upper surface of the glass-ceramic substrate 2 is covered with a sealing glass. A paste is formed by means such as printing, and the lead frame 8 is sandwiched between the glass ceramic substrates 2.3 and heated. In this way, the glass-ceramic substrates 2.3 are bonded with the lead frame 8 having the gold-plated portion 15 sandwiched between them. Next, the lead frame 8 is bent as shown in FIG.

Next, as shown in FIG.
1, mounted on the gold H4 and bonded, a eutectic of silicon and gold is generated and bonded, and bonding is performed with a wire 12 of gold or the like. Finally, a sealing glass paste is applied to at least one of the joint portions 9 of the upper lid l4 and the glass ceramic substrate 3 by a method such as coating or printing, and the paste is heated and joined.

Also, another method of bonding the glass ceramic substrate 2 and the AIN substrate 1 will be explained. An organic vehicle is added to the glass frit and kneaded to form a paste, which is then applied to form the joint portion 5, and the glass ceramic substrate 2 and the AIN substrate 1 are pressed together and fired and solidified. .

The part to which the paste is applied can be either the glass-ceramic substrate 2 or the AIN substrate 1.
It may be applied to both the glass ceramic substrate 2 and the AIN substrate 1. As for the glass layer of the joint portion 5, the coefficient of thermal expansion γ of this glass layer is Iβ−γ≦30X 1G−′℃−
1 is required.

If β-γ1 exceeds 30X to -'C1, the difference in coefficient of thermal expansion between the glass layer and the glass-ceramic substrate 2 or the AIN substrate 1 becomes large, and sufficient reliability of the joint 5 cannot be obtained. Preferably, 1β-γ1≦20X 10−′℃
-1, more preferably 1β-γ1≦5×10
-'℃-1.

Further, even if such a glass layer contains ceramic powder such as Alton, MgO, mullite, forsterite, steatite, cordierite, quartz, AIN, etc. as a filler in addition to glass frit, the above thermal expansion coefficient conditions are met. It can be used if it satisfies the following. Further, the composition of the glass frit is not particularly limited, and may include BzOx-SiOt system, BaOs-Altos-S
iOa system, PbO-BaOz-Sift system, CaO
-B*Os-SiOx-AlaOs system, BaO-Bz
Oz-Sing-Alias system, ZnO-BzOi-
Examples include the Sto2 series. Further, the organic vehicle is not particularly limited, and may be a mixture of an organic binder such as ethyl cellulose or acrylic resin and a solvent such as acetone or α-terpineol.

Further, a cross-sectional view of another type of composite circuit device is shown in FIG. 3 and will be described.

Cu paste was applied to the green sheets of two glass-ceramic substrates having openings. After forming Ag paste, Ag-Pd paste, Au paste, etc. into a predetermined circuit by printing or the like, they are laminated and pressed together. Furthermore, in order to join the external terminal bin l6 made of Kovar or the like, the above-mentioned Cu paste or the like is formed on the side surface 7 of the two green sheets by side printing or the like, and after firing, the external terminal bin l6 is bonded with silver solder, etc. Join by heating using solder or the like. The wire 12 is connected to a gold plated portion 17 formed on a conductor on a glass ceramic substrate made of the above-mentioned Cu paste or the like. The other connections between the AIN substrate 1 and the glass ceramic substrate are the same as in the composite circuit device shown in FIG.

What is the composite circuit device manufactured in this way? The external terminal pin 16 is not supported between the glass ceramic substrates 2.3. The composite circuit device of the present invention is not limited to the structure shown in FIGS. 1 and 3, but includes all devices having a structure in which a glass ceramic substrate 2 and an AIN substrate 1 are bonded. .

[Example] (Example 1) A1aOs powder 50%, 2MgO・SiO■ powder 5%
A green sheet with a thickness of 1.2 mm was prepared by adding a plasticizer and a solvent to 45% glass frit, cross-wire and molding.

The above glass frit composition is: SiOi 45%, Aitos 10%, B. 0.
35%. It consisted of 10% Ba0.

This green sheet has an outer size of 30 mm square with a diameter of 20 mm in the center.
Shape with mm square opening and 25 mm in the center
Punch out 100 pieces each into a shape with corner openings, and
Two types of glass ceramic substrates having openings 6.10 as shown in FIG. 2 were obtained by firing in air at 50°C for 4 hours. The thermal expansion coefficient α of this glass ceramic substrate is 45X
It was 10-'C-1.

Apart from this, commercially available AIN board (25x 25x 1.
Omm) (AGN-2 manufactured by Asahi Glass, thermal conductivity 200w
/mK, thermal expansion coefficient 45×10-'°C-1), gold paste and silver paste were formed by printing and fired at 900°C for 3 hours in air to form a silver layer on the gold layer 4 and the joint part 5. Furthermore, a silver layer was also formed on the glass ceramic substrate at the joint portion 5 using the same method.

These AIN substrates and glass ceramic substrates were processed using commercially available silver solder (Ag 72%, Cu Z8%) at 900°C.
They were bonded by heating at ℃ for 10 minutes. Next, the A
A glass paste for sealing was printed on the upper surface of the glass ceramic substrate bonded to the IN substrate and the lower surface of the glass ceramic substrate having an opening (Fig. 2), and a Kovar lead frame was sandwiched between them, and the paste was heated at 680°C for 10 minutes. The glass ceramic substrates were bonded by heating.

Next, the Kovar lead frame was bent to obtain the composite circuit device shown in FIG. Note that the tip of the Kovar lead frame used was gold-plated in advance.

Next, as shown in FIG. 1, a bare chip was bonded inside the opening at 430° C., and then bonding was performed with a gold wire.

Then, use sealing glass paste to seal the top lid.
They were bonded by heating at 0°C for 10 minutes to obtain a composite circuit device as shown in Figure 1. The difference between the coefficient of thermal expansion α of the glass-ceramic substrate constituting this composite circuit device and the coefficient of thermal expansion β of the AIN substrate is 1α - βI = 45x 10-'- 45x 10-
' = 0°C-1.

100 of these composite circuit devices were heated at +250°C to -50°C.
A heat cycle test was conducted for 1000 cycles for 30 minutes, but there was no peeling or cracking at the joints. There were no defects such as these, and both airtightness and reliability were satisfactory.

(Example 2) At2oz powder 10%, 2MgO・SiO■ powder 50%
%, add plasticizer and solvent to 40% glass frit,
The mixture was kneaded and molded to produce a green sheet with a thickness of 1.2 mm. The above glass frit composition is SiO■45
%, Al. 0. 10%, 8*0-35%. Ban
It consisted of 10%.

Kome green sheet and Asahi Glass's AIN board AGN-
A composite circuit device as shown in FIG. 1 was fabricated using Example 2 in the same manner as in Example 1.

The thermal expansion coefficient of the glass-ceramic substrate is 6 as a result of measurement.
2X 10-'C-1. Therefore, the thermal expansion difference 1α-β1 between the glass ceramic substrate and the AIN substrate is 1α-β1 = 62x 10-' - 45x 10
-' = 17x 10-'°C-1.

As a result of conducting a heat cycle test of 100 pieces of this composite circuit device at +125°C to -50°C for one period of 30 minutes, there were no defects such as peeling of joints or cracks, and both airtightness and reliability were confirmed. It was satisfying.

Furthermore, tests with temperature differences from the above +250℃ to -50℃
As a result of conducting a heat cycle test at 1000 degrees Celsius for 30 minutes, one minute crack was found in one out of 1000 pieces, but there was no problem in practical use.

(Example 3) At-Os powder 38%. Glass frit 57%, Ce
Plasticizer in 5% Oa powder. A solvent was added, kneaded, and molded to produce a green sheet with a thickness of 1.2 mm.

The composition of the glass frit is 40% SiOa, 7% A1aOs, 8% CaO.
%, BaO 15%, Pb0 10%, BJs 1
0% and 10% Zn0 were used. Using the above green sheet, a composite circuit device having the same shape was manufactured in the same manner as in Example 1. However, the joint part 5 is an AIN board. After forming a copper layer on the glass ceramic substrate, silver wax (Ag 50%. Cu 25%)
, Zn 25%) and was bonded by heating at 850° C. for 10 minutes.

The difference between the coefficient of thermal expansion α of the glass-ceramic substrate and the coefficient of thermal expansion β of the AIN substrate constituting this composite circuit device is α - βI = 54X to" - 45X to" =
9X10-'℃-1? there were. A heat cycle test of 100 pieces of this composite circuit device at +250°C to -50°C was performed for 1000 cycles for 30 minutes, but no defects such as peeling or cracking of the joints occurred, and the airtightness and reliability were improved. It was something we were both satisfied with.

(Example 4) Altos powder 10%, 2MgO・Sin■ powder 50%
%. A solvent, a dispersant, an organic binder, and a plasticizer were added to 40% glass frit, mixed, and molded to a thickness of 1.2 nm.
A green sheet of m was prepared. The composition of the glass frit used was SL0. 45%. AlaOa 10%. B*Os
35%. It consisted of 10% Ba0. This green sheet has an external dimension of 30 mm.
A corner shape with a 20 mm square opening in the center;
After punching into a shape with a 251 lm square opening in the center, laminating and crimping each, the
After firing for a period of time, a multilayer glass ceramic substrate having openings 6 and 10 as shown in FIG. 2 was obtained. The thermal expansion coefficient of this glass ceramic substrate is 62X 10-'℃
It was one.

In addition to this, a commercially available AIN board (AGN-2 manufactured by Asahi Glass,
External dimensions: 25X 25X l. otmm, thermal conductivity 20
0w/mK, thermal expansion coefficient 45X 10-'℃-
A gold layer was formed on 1》. Next, an organic vehicle was added to the glass frit, kneaded in an automatic mortar, and then passed through three rolls to produce a glass paste. Here, the glass frit was completely the same as that used when producing the above-mentioned glass-ceramic substrate. The composition of the organic vehicle was 5% ethylcellulose and 95% α-terpineol. Then, this glass paste was screen printed on the joint part of the AIN board, and was pressure-bonded to the glass ceramic board having the above-mentioned opening, and then baked in air at 850°C for 10 minutes to join the glass ceramic board to the AIN board. did.

The coefficient of thermal expansion of the glass layer at this joint is 43X.
The temperature was 10-'C-8.

Next, sealing glass paste was printed on the upper surface of the glass ceramic substrate bonded to the AIN substrate and the lower surface of the glass ceramic substrate that was to become the upper side, and a Kovar lead frame was sandwiched between them. By heating for 10 minutes, a glass ceramic substrate having an opening was bonded with this Kovar lead frame in between. Next, this Kovar lead frame was bent to obtain a composite circuit device as shown in FIG. Note that the tip of the Kovar lead frame used was gold-plated in advance.

Next, as shown in FIG. 1, the bare chip was bonded onto the AIN substrate at 430 DEG C., and then bonded with gold wire.

Then, the upper lid is joined by heating at 380° C. for 10 minutes using a sealing glass paste, and the first
A composite circuit device as shown in the figure was obtained.

In this composite circuit device, 1α-βl = l 62X 10-'- 45X 1
0-'= 17X 10-'℃-1 1β-γI = + 45X 10-'- 43X 1
0-'1=2X10-'°C-1.

For 1000 pieces of this composite circuit device, +250℃~
-50℃ heat cycle test for 30 minutes 1000
I ran the cycle, but the joints peeled off. There were no defects such as cracks, and both airtightness and reliability were sufficient.

(Example 5) Altos powder 38%, glass frit 57%, Ce
A solvent, a dispersant, an organic binder, and a plasticizer were added to 5% of the nt powder, and the mixture was kneaded and molded to produce a green sheet with a thickness of 1.2 mm. The composition of the glass frit used was 40% SiO*, 8% AlaOi, 4% Ca,
BaOl8%, Pb0 10%lB20310-%
, 10% ZnO.

This green sheet has an outer size of 30 mm square, with 2 squares in the center.
Shape with 0 mm square opening and 25 mm in the center
After punching a shape with corner openings and printing a copper paste consisting of Cu powder and an organic vehicle into a predetermined circuit,
They were overlapped and pressed together to be crimped.

Furthermore, in order to make an electrical connection with an external terminal, side printing was performed using copper paste, and the plate was placed in a nitrogen atmosphere furnace for 90 minutes.
After firing at 0°C for 6 hours, a Kovar external terminal bottle was joined using silver solder (72% Ag, 28% Cu) by heating at 900°C for 10 minutes.

Apart from this, AIN board (AGN-2) manufactured by Asahi Glass ■
A gold layer was formed on the surface.

Next, an organic vehicle was added to the glass frit, kneaded in an automatic mortar, and then passed through three rolls to produce a glass paste. The composition of the glass frit used was Sins 40%, Al. 0. 15%, Ca0
10%, Ba015%, PbO to%. B*O
It consisted of s 10%. The organic vehicle used was an acrylic resin dissolved in butyl carbitol acetate.

Then, this glass paste was screen printed on the AIN substrate joint, a glass ceramics substrate with an opening was bonded, and heated at 800°C for 30 minutes in a nitrogen atmosphere.
A glass layer was formed, and a glass ceramic substrate was bonded to the AIN substrate. The coefficient of thermal expansion of this glass layer is 51×1
It was 0-"C-'.

Next, the bare chip was bonded onto the AIN substrate at 430° C., and then bonded with gold wire. Then, the upper lid is joined by heating it at 380°C for 10 minutes using a sealing glass paste, and the third
A composite circuit device as shown in the figure was obtained.

In this composite circuit device, α-β= 49X 10-' - 45x 10-'=
4X10-'℃゛1 β-γl = + 45X 10-'- 51X 10
-' 1=6X10 "C-'.

For 1000 pieces of this composite circuit device, +250℃~
-50℃ heat cycle test for 30 minutes 2000 cycles
I ran the cycle, but the joints peeled off. There were no defects such as cracks, and both airtightness and reliability were sufficient.

Furthermore, for 1000 composite circuit devices, +3
50℃~-195. A heat cycle test at 8℃ (liquid nitrogen) was conducted for 2000 cycles of 30 minutes each.
There were no defects such as peeling cracks in the joints, and both airtightness and reliability were sufficient. (Example 6) In producing the above-exemplified glass-ceramic substrate used for the composite circuit device of the present invention, a powder having the composition shown in Table 1 in terms of oxide was prepared, and the above-mentioned oxide Next, acrylic resin as an organic binder, dibutyl phthalate as a plasticizer, and toluene as a solvent were added and kneaded to obtain a viscosity of 10.
,000 to 30,000 cps of slurry was prepared. Next, this slurry was formed into a sheet with a thickness of about 0.2 mm, and then dried at 70° C. for about 2 hours. Next, this sheet was laminated into four layers and heated at 900°C. After firing for 6 hours, a multilayer glass ceramic substrate was manufactured.

The porosity, dielectric constant, and bending strength of this multilayer glass ceramic substrate were measured.

Further, a conductive paste was printed on this multilayer glass ceramic substrate by screen printing, and baked at 600 to 900°C to evaluate solder wettability. The results are shown in Table 1. Furthermore, in Table 1, if the sinterability is poor, the porosity increases and the bending strength decreases. In place of the glass-ceramic substrate used in Example 1, the multilayer glass-ceramic substrate having the composition shown in the example in Table 1 was used, and all other conditions such as shape and bonding were the same as in Example 1. A composite circuit device was fabricated using the following methods. The number of manufactured samples was 100 for each sample number 1 in the example shown in Table 1, for a total of 3,600. 100 of each of these composite circuit devices were heated to +250°C to -
A heat cycle test was conducted at 50°C for 1,000 cycles of 30 minutes each, but the bonded portion peeled off. There was no occurrence of defects such as cracks, and the airtightness and reliability were satisfactory.

Furthermore, 400 of the above composite circuit devices (
100 pieces per sample number 1), +350℃~-
195. A heat cycle test at 8° C. (liquid nitrogen) was conducted for 2000 cycles each lasting 30 minutes. The results are as follows. (Comparative Example 1) 2MgO・Sift powder 55%, glass frit 45%
Plasticizer. Add a solvent, knead, and mold to a thickness of 1
．． A 2 mm green sheet was prepared.

The above glass frit composition is Stow 45%, Al. 03 10%, Bass
35% and 10% BaO.

This green sheet and Asahi Glass's AIN board AGN-2
A composite circuit device similar to that in Example 1 was manufactured in the same manner as in Example 1 using the following.

As a result of measuring the thermal expansion coefficient of the glass ceramic substrate,
It was 68X to -'C-1. Therefore, the thermal expansion difference α-β1 between this glass ceramic substrate and the AIN substrate is α-β l = l 68X 10-'- 45X
10-'=23X 10-"C-'.

1,000 of these composite circuit devices were subjected to a heat cycle test at +125°C and -50°C for 1,000 cycles for 30 minutes, and as a result, 236 of the 1,000 bonded parts peeled off. Cracks occurred in 19 out of 1000 joints. Furthermore, as a result of conducting a test with a temperature difference from the above, a heat cycle test from +250°C to -50°C, and 1000 cycles for 30 minutes, 820 out of 1000 joints peeled. Cracks occurred in 180 out of 1000 joints.

(Comparative Example 2) A glass ceramic substrate having an opening as shown in FIG. 2 was obtained in the same manner as in Example 4. The coefficient of thermal expansion of this glass ceramic substrate was 62×10-'°C-1.

Next, a silver layer was formed on the joint portion of this glass ceramic substrate.

Separately, a gold layer and a silver layer for mounting a bare chip were formed on an AIN substrate (AGN-2) manufactured by Asahi Glass. Then,
Glass-ceramic substrates with these silver layers and AIN
The substrate was bonded to the substrate using silver wax (Ag 72%, Cu 2g%) by heating at 900° C. for 10 minutes.

The coefficient of thermal expansion of this silver rod is 19ox lo-”C +l
Met. Thereafter, in the same manner as in Example 4, a composite circuit device shown in FIG. 1 was obtained. In this composite circuit device, 1α - βl = + 62X10゜'- 45X 1
0-'1" 17X IQ-"℃-1 1β-γI = + 45X to"- 190 X
It was very hot at 145 x 10-'°C. For 1000 of these composite circuit devices, +125'C
, -50℃ heat cycle test for 30 minutes 100
Although 0 cycles were performed, no defects such as peeling or cracking of the joints occurred. However, when we conducted a heat cycle test under more severe conditions of +250℃ and -50℃ for 1000 cycles of 30 minutes, we found that 10
A minute crack was found in 1 out of 00 pieces, and furthermore,
When continued for 2000 cycles, 1 out of 1000
Peeling was observed in 1 piece, and minute cracks were observed in 13 pieces. (Comparative Example 3) In place of the glass ceramic substrate used in Example 1, the above multilayer glass ceramic substrate having the composition shown in the comparative example in Table 2 was used, and all other conditions such as shape and bonding were the same as in Example 1. A composite circuit device was fabricated in the same manner as in Example 1. The number of manufactured samples was 100 for sample number l4 of the comparative example in Table 2.

A heat cycle test of 100 pieces of each of these composite circuit devices at +125°C and -50°C was performed for 1,000 cycles for 30 minutes. As a result, 22 out of 100 pieces had peeling at the joint, and 2 out of 100 had cracks at the joint. Occurred. [Conductor paste used] Ag-Pd paste: TE-4846 manufactured by Tanaka Massey
Au paste Nitanaka Massey TR-130CC
u Paste: Du Pant 9l53
Au-Pt paste: ESL 5800BN
i Paste: COND 5557W manufactured by ESL
Paste: ■ WA-1200-AG2 manufactured by Asahi Chemical Laboratory Mo-Mn paste: ■ WA-12 manufactured by Asahi Chemical Laboratory
00-AGI [Characteristic evaluation method] Porosity Measured by Archimedes method. dielectric constant
The characteristics at 100κHz were measured and evaluated using an AC bridge manufactured by Ando Electric. Temperature: 25±1°C, Humidity: 45±1% Bending strength: Measured using a strength testing machine manufactured by Toyo Baldwin. Cut the sintered board into 10 sm width and 50 mm length 2
Two-point support solder wettability of 0III1'Ag-Pd paste: Sn 63%, Pb 35%, Ag2% solder, 240
After dipping at ±5°C for 5 seconds, the wetted area ratio of the solder was evaluated. Cu, Ni, Au-Pt conductor: Sn 64%, Pb 36%, solder, 250±5℃,
After dipping for 5 seconds, the wetted area ratio of the solder was evaluated.

Au conductor: In 50%, Pb 50%, solder. 260±5℃,
After dipping for 5 seconds, the wetted area ratio of the solder was evaluated.

W, Mo-M conductor: flit as base plating on the surface
After plating and further applying Au plating to a thickness of 1 to 2 μm on the NL plating surface, Sn 64%, Pb 36
%solder. After dipping at 250±5°C for 5 seconds, the wetted area ratio of the solder was evaluated. [Effects of the Invention] Since the composite circuit device of the present invention has a hair chip mounted on the AIN board, it has excellent heat dissipation and high reliability. Furthermore, since the difference in thermal expansion between the AIN substrate and the glass-ceramic substrate is small, there is no need to form a special metal layer at the joint to alleviate the difference in thermal expansion. Moreover, it has the advantage that stress is less likely to occur in the joint, and defects such as peeling of the joint do not occur.

[Brief explanation of drawings]

Figure 1: Cross-sectional view of a typical example of the composite circuit device of the present invention. FIG. 2: A cross-sectional view of each component showing the manufacturing procedure of the composite circuit device shown in FIG. 1. FIG. 3 is a sectional view of another type of composite circuit device of the present invention. Figure 4: Characteristics of thermal expansion coefficient vs. temperature of glass ceramics substrate and AIN substrate Figure 1: AIN substrate 2.3: Glass ceramics substrate 5: Joint part diagram Z times

Claims (8)

[Claims] (1) A composite circuit device characterized in that it has a structure in which a glass ceramic substrate and an aluminum nitride substrate are bonded together, the thermal expansion being approximately the same as that of the aluminum nitride substrate. (2) The difference in thermal expansion coefficient between the glass ceramic substrate and the aluminum nitride substrate is 20×10^-^7℃^-^1
2. The composite circuit device according to claim 1, characterized in that: (3) A first method characterized in that silver solder is used in the joint between the glass ceramic substrate and the aluminum nitride substrate.
3. The composite circuit device according to item 1 or 2. (4) The composite circuit device according to item 1 or 2, wherein the glass ceramic substrate and the aluminum nitride substrate are bonded via a glass layer. (5) The difference in thermal expansion coefficient between the joint where the glass ceramic substrate and the aluminum nitride substrate are joined and the aluminum nitride substrate is 30×10^-^7°C^-^3 or less. The composite circuit device according to claim 1, claim 2, claim 3, or claim 4, wherein (6) Inorganic components are expressed as weight%, and in terms of oxides, they are substantially alumina 50-91, SiO_275-30, PbO3-
20, B_2O_30-15, alkaline earth metal oxide 0.5-15, Ti+Zr+Hf oxide 0-6, and furthermore, based on the total amount of the above inorganic components, substantially Cr_2
O_3+V_2O_5+CeO_2+CoO+SnO_
The glass-ceramic substrate composition for a composite circuit device according to item 1, item 2, item 3, item 4, or item 5, wherein 0 to 10 of 2 is added. (7) Inorganic components are expressed in weight%, substantially alumina 50~
91, SiO_25~30, PbO3~20, B_2O
_30-15, alkaline earth metal oxide 0.5-15,
Ti + Zr + Hf oxides 0 to 6, and the total amount of the above inorganic components, substantially including chromium oxide in terms of Cr_2O_3, vanadium oxide in terms of V_2O_5, cerium oxide in terms of CeO_2, cobalt oxide in terms of CoO, and tin oxide. For a composite circuit device according to item 1 or 2 or 3 or 4 or 5 consisting of chromium oxide + vanadium oxide + cerium oxide + cobalt oxide + tin oxide 0 to 10 in terms of SnO_2. Glass ceramic substrate. (8) Inorganic components expressed as weight%, substantially alumina 50~
91, SiO5~30, PbO3~20, B_2O_3
0-15, alkaline earth metal oxide 0.5-15, Ti
+Zr+Hf oxides 0 to 6, and chromium oxide in terms of Cr_2O_3, vanadium oxide in terms of V_2O_5, and cerium oxide in terms of C to the total amount of the above inorganic components.
A glass ceramic substrate consisting of chromium oxide + vanadium oxide + cerium oxide + cobalt oxide + tin oxide 0 to 10 is bonded to an aluminum nitride substrate, with cobalt oxide in terms of CoO and tin oxide in terms of SnO_2. The composite circuit device according to item 1, item 2, item 3, item 4, or item 5, characterized in that it has a structure.