JPH02237054A - Compound type circuit device - Google Patents

Compound type circuit device

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Publication number
JPH02237054A
JPH02237054A JP1231399A JP23139989A JPH02237054A JP H02237054 A JPH02237054 A JP H02237054A JP 1231399 A JP1231399 A JP 1231399A JP 23139989 A JP23139989 A JP 23139989A JP H02237054 A JPH02237054 A JP H02237054A
Authority
JP
Japan
Prior art keywords
substrate
substrates
expansion coefficient
thermal expansion
generated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1231399A
Other languages
Japanese (ja)
Other versions
JP2952303B2 (en
Inventor
Kazuo Sunahara
Kazunari Watanabe
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP63-286664 priority Critical
Priority to JP28666488 priority
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP1231399A priority patent/JP2952303B2/en
Publication of JPH02237054A publication Critical patent/JPH02237054A/en
Application granted granted Critical
Publication of JP2952303B2 publication Critical patent/JP2952303B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15Ceramic or glass substrates
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0054Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
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    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/04Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass
    • C04B37/047Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass by means of an interlayer consisting of an organic adhesive, e.g. phenol resin or pitch
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    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of H01L27/00 - H01L49/00 and H01L51/00, e.g. forming hybrid circuits
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    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
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    • C04B2235/50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
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    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
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    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/92Specific sequence of method steps
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    • H01L2224/9222Sequential connecting processes
    • H01L2224/92242Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/901Printed circuit
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree

Abstract

PURPOSE:To obtain a highly reliable compound type circuit device, in which a crack and the like are little generated, by a method wherein a glass ceramics substrate having a thermal expansion coefficient almost identical with that of an aluminum nitride substrate and the aluminum nitride substrate are jointed with each other. CONSTITUTION:As a AIN substrate 1, one having a thermal conductivity of 100w/mK or more is desirable for the heat dissipation of an IC bare chip 11 which is mounted on the substrate 1. As glass ceramics substrates 2 and 3, one having, for example, a thermal expansion coefficient of 43 to 63X10<-7> deg.C<-1>, a dielectric constant less than 9.0 and the characteristics of Au, Ag, Ag-Pd, Cu and Au-Pt conductors to be used is desirable as there is a need to form a circuit pattern. Moreover, if the substrates 2 and 3 is one having a thermal expansion coefficient almost identical with that of the substrate 1, the materials for the substrates 2 and 3 can be used without being specially limited. Thereby, the title device is superior in heat dissipation property, has a high reliability and moreover, a stress is hardly generated in a junction part in the device and a defect, such as a peeling and the like, is not generated in the junction part.
JP1231399A 1988-11-15 1989-09-08 Composite circuit device Expired - Fee Related JP2952303B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP63-286664 1988-11-15
JP28666488 1988-11-15
JP1231399A JP2952303B2 (en) 1988-11-15 1989-09-08 Composite circuit device

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JP1231399A JP2952303B2 (en) 1988-11-15 1989-09-08 Composite circuit device
US07/436,738 US5057376A (en) 1988-11-15 1989-11-15 Hybrid package, glass ceramic substrate for the hybrid package, and composition for the glass ceramic substrate
US07/717,275 US5304518A (en) 1988-11-15 1991-06-18 Hybrid package, glass ceramic substrate for the hybrid package, and composition for the glass ceramic substrate

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JPH02237054A true JPH02237054A (en) 1990-09-19
JP2952303B2 JP2952303B2 (en) 1999-09-27

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US7090423B2 (en) 2002-02-21 2006-08-15 Sumitomo Electric Industries, Ltd. Connecting structures
JP2013105967A (en) * 2011-11-16 2013-05-30 Nikkiso Co Ltd Semiconductor package substrate and manufacturing method of the same

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US5304518A (en) 1994-04-19
US5057376A (en) 1991-10-15
JP2952303B2 (en) 1999-09-27

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