JP2001093327A - Cu BASED CONDUCTOR COMPOSITION AND GLASS CERAMIC WIRING BOARD AS WELL AS ITS MANUFACTURING METHOD - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a Cu based conductor composition suitable to a glass ceramic, exhibiting high bonding strength as well as reliability on thermal hysteresis in use for a wiring circuit layer, good wetting performance and high bonding strength with a glass ceramic in use for beerhole filling and a firing contraction rate corresponding to that of a glass ceramic in a firing process. SOLUTION: A glass ceramic wiring board comprises a glass ceramic insulating board, a wiring circuit layer formed on the surface of or in the insulating board and a beerhole conductor for electrically connecting the wiring circuit layers. The wiring circuit layer and/or beerhole conductor are each formed of a conductor which contains, mainly, Cu and 0.1-15 wt.pts. glass frit having a yielding point of 600-800 deg.C and 0.1-15 wt.pts. silica glass in terms of 100 wt.pts. Cu.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Cu-based conductor composition containing Cu as a main component, and a via-hole conductor or wiring made of the Cu-based conductor composition formed by co-firing with an insulating substrate made of glass ceramic. The present invention relates to a method for manufacturing a glass ceramic wiring board on which a circuit layer is formed.

[0002]

2. Description of the Related Art In recent years, in a wiring board, compatibility, high density, and high speed of a high-frequency circuit have been demanded, and a dielectric constant lower than that of an alumina-based ceramic material has been obtained. Possible low-temperature fired wiring boards are receiving more attention.

[0003] This low-temperature fired wiring board is a wiring board in which a wiring circuit layer mainly composed of a low-resistance metal such as copper, gold or silver is formed on an insulating substrate made of glass-ceramics and fired simultaneously with the substrate. It has been known. Such a wiring board is produced by printing a conductor paste containing the above-mentioned low-resistance metal powder on a sheet-shaped molded body made of a glass ceramic composition, and simultaneously firing the same at 800 to 1000 ° C.

In addition, the low-temperature fired wiring board has a low resistance of a wiring layer and a low dielectric constant and a low dielectric loss of an insulating substrate. Applications to all fields, such as personal digital assistant systems, high-frequency multilayer wiring boards used for various satellite communications, and the like, are being promoted.

As a low-resistance wiring circuit layer used for a low-temperature fired wiring board, applications are limited due to cost problems in a gold-based material and migration problems in a silver-based material. Although it is necessary to perform the process in a reducing atmosphere, it is a material that can sufficiently meet the demands for higher density of wiring boards and higher frequencies of circuits in the wiring board, so it has become the mainstream material for forming wiring layers ing.

As a specific method for forming a wiring circuit layer containing copper powder as a main component on the surface and inside of an insulating substrate made of glass ceramic, a slurry prepared by adding a solvent to a glass ceramic raw material powder and an organic binder is used. Formed into a sheet by doctor blade method or the like, punching a through hole in the obtained green sheet, filling the through hole with a conductive paste mainly composed of copper powder, and at the same time, mainly applying copper powder on the green sheet. Conductive paste as a component is printed and formed into a wiring pattern by screen printing, etc.
Pressing and laminating a plurality of green sheets on which a via hole conductor in which a conductor is filled in a wiring pattern or a through hole is formed, and
It was produced by firing at 00 to 1000 ° C.

[0007] As the copper conductor composition applied for the above-mentioned purpose, the softening point of the main component copper or copper alloy is 3 or more.
Bi, in order to improve the adhesive force between the crystallized glass frit and the conductor with respect to the conductive composition containing a glass frit at a temperature of 00 to 600 ° C. (see JP-A-63-301405) and copper as a main component, Cr, Nb, Sb, Ta, Ti,
A conductor paste containing a metal such as W or a metal oxide (see JP-A-1-112605) has been proposed.

[0008]

However, the copper conductor composition proposed above has the following problems. Since the softening point of the glass frit is low, the debubbling step (usually 65) to remove the organic components in the green sheet is performed.
(0 to 750 ° C.), poor binder removal occurs due to softening of the glass frit, and the bonding strength becomes unstable. In addition, although the initial adhesive strength is good, the metal or metal oxide added for the purpose of improving the adhesive strength is deteriorated by passing through the heat history (such as when solder balls are mounted), and the adhesive strength is deteriorated. I do. Furthermore, the conductor composition is mainly suitable for wiring patterns, and when these are filled in via holes to form via-hole conductors, the wettability with glass ceramics is remarkably deteriorated. As a result, gaps occur between the via-hole conductors and the difference in the sintering start temperature between the via-hole conductor and the glass ceramic, resulting in misalignment of the shrinkage during the firing process. Irregularities are formed at the ends of the conductors. As a result, there is a problem that a connection failure due to the roughness of the silicon chip connection portion of the semiconductor element, a connection failure of various chip components, or a connection failure of wire bonding occurs. Was.

SUMMARY OF THE INVENTION Accordingly, the present invention has been made to solve the above-mentioned problems, and has as its object to provide a Cu-based conductor composition suitable for glass ceramics, that is, an adhesive for a wiring pattern including reliability such as heat history. A Cu-based conductor composition that has high strength, has good wettability with glass ceramic for filling via holes, has high adhesive strength, and can match the firing shrinkage with glass ceramics during the firing process; It is an object of the present invention to provide a glass-ceramic wiring board free from occurrence of an abnormal form such as a conductor protruding or being buried from the surface of a glass-ceramic insulating substrate, and a method of manufacturing the same.

[0010]

Means for Solving the Problems The inventors of the present invention have repeatedly studied the above-mentioned problems, and as a result, as a Cu-based conductor composition, a Cu component composed of Cu or a mixture of Cu and Cu oxide. It has been found that the above object can be achieved by using a conductor composition in which a glass frit having a specific yield point and quartz glass are prepared in a specific range with respect to 100 parts by weight.

That is, the Cu-based conductor composition of the present invention comprises C
u or C comprising a mixture of Cu and Cu oxide
The yield point is 600 to 800 with respect to 100 parts by weight of the u component.
It is characterized by containing 0.1 to 15 parts by weight of a glass frit at 0 ° C and 0.1 to 15 parts by weight of quartz glass.

The glass-ceramic wiring substrate includes a glass-ceramic insulating substrate, a wiring circuit layer formed on or in the insulating substrate, and a via-hole conductor for electrically connecting the wiring circuit layer. Wherein the wiring circuit layer and / or the via-hole conductor are mainly composed of Cu,
Yield point of 600 to 800 ° C with respect to 100 parts by weight of Cu
And a conductor containing 0.1 to 15 parts by weight of glass frit and 0.1 to 15 parts by weight of quartz glass.

As a method of manufacturing such a glass-ceramic wiring board, a via hole is formed in glass or a green sheet obtained by molding a mixture of glass and a ceramic filler into a sheet, and a via hole is formed in the via hole. After filling the Cu-based conductor paste and printing and applying the Cu-based conductor paste on the surface of the green sheet in a circuit pattern to form a wiring circuit layer, 8
In the method for producing a glass ceramic wiring board which is fired at 00 to 1000 ° C., the Cu-based conductor paste is prepared by adding Cu or a Cu component composed of a mixture of Cu and Cu oxide to 100 parts by weight of the Cu component in terms of Cu. On the other hand, a glass frit having a yield point of 600 to 800 ° C.
It is characterized by containing 5 parts by weight and 0.1 to 15 parts by weight of quartz glass.

In the above-mentioned glass-ceramic wiring board, as a wiring circuit layer, a glass frit having a sag point of 600 to 800 ° C. with respect to the Cu component is 0.1 to 4%.
Parts by weight and a conductor containing quartz glass in a ratio of 0.1 to 4 parts by weight, and as a via hole conductor, a glass frit having a yield point of 600 to 800 ° C. with respect to the Cu component is 2 to 2 parts. 15 parts by weight and 2 to 1 parts of quartz glass
Desirably, the content is 5 parts by weight.

In the above manufacturing method, the Cu
It is desirable that the glass frit in the system conductor composition is the same as the glass in the green sheet.

According to the present invention, there is provided a glass frit having a yield point of 600 to 800 ° C. with respect to a Cu component as a main component,
The following effects are exhibited by incorporating quartz glass. That is, by adding quartz glass, sintering of copper can be delayed, and the shrinkage ratio of the copper conductor and the glass ceramic in the firing process can be matched. Further, after the binder is efficiently removed by adding a glass frit having a sag point of 600 to 800 ° C., the glass frit is softened and penetrates into a gap between copper and glass ceramics or copper and quartz glass to be bonded. Be strong.

Further, when a via-hole conductor is formed using the above-mentioned Cu-based conductor composition, when only glass is added to the Cu component, the added glass flows out of the via-hole conductor toward the glass ceramic insulating substrate side, and the via-hole conductor is formed. Although the problem that the surrounding glass ceramic insulating substrate rises and irregularities are formed, the addition of quartz glass suppresses the outflow of the glass component in the via-hole conductor, and the via-hole conductor and the glass ceramic insulating substrate in the above-described portion of the glass-ceramic insulating substrate. Generation of unevenness can be suppressed. As a result, a conductor composition suitable for a wiring circuit layer and a via hole conductor in a glass ceramic wiring board can be obtained.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a glass ceramic wiring board according to the present invention will be described with reference to the drawings. In the description, the structure of the wiring board will be described using a multilayer wiring board including a plurality of glass ceramic insulating layers.

According to the glass-ceramic wiring substrate 1 of the present invention, the insulating substrate 2 includes a plurality of glass-ceramic insulating layers 2.
A wiring circuit layer 3 mainly composed of copper powder having a thickness of about 5 to 30 μm is formed on the insulating layer and on the surface of the insulating substrate. In the insulating substrate 2, a via-hole conductor 4 having a diameter of about 30 to 200 μm is formed so as to penetrate the insulating layers 2a to 2d in the thickness direction.

The insulating substrate 2 is made of glass ceramic containing at least SiO ₂ containing glass or a composite material of SiO ₂ containing glass and ceramic filler. Specifically, the glass component of the glass ceramic is composed of a plurality of metal oxides, and is amorphous after firing, or cordierite, mullite, anorthite, Celsian, spinel, garnite, willemite, dolomite, lithium after firing. It is composed of crystallized glass that precipitates crystals of silicate and its substituted derivatives.

In the glass component, in addition to SiO ₂ , Li ₂
Alkali metal oxides such as O, K ₂ O, Na ₂ O, Ca
Alkaline earth metal oxides such as O, MgO, BaO, A
_{l 2 O 3, P 2 O} 5, ZnO, containing at least one selected from the group consisting of B ₂ O _3, PbO.

As the filler component, at least one selected from the group consisting of quartz, cristobalite, quartz, corundum (α-alumina), mullite, cordierite, and forsterite is preferably used. Glass component and filler component, the glass component is 30 to 70 parts by weight,
It is appropriate for the filler component to be composed of 70 to 30 parts by weight in order to increase the strength of the substrate.

According to the present invention, the wiring circuit layer 3 and / or the via-hole conductor 4 are composed mainly of Cu
With respect to 0 parts by weight, 0.1-15 parts by weight of a glass frit having a yield point of 600-800 ° C. and 0.1 parts by weight of quartz glass
It is characterized by being composed of a conductor contained in a proportion of up to 15 parts by weight, and in particular, the optimum content is determined for the wiring circuit layer and the via hole conductor.

For the wiring circuit layer, a glass frit having a sag point of 600 to 800 ° C. with respect to the Cu component is used as a glass frit.
It is desirable to contain 1 to 4 parts by weight and 0.1 to 4 parts by weight of quartz glass.

The reason why the yield point of the glass frit is limited to the above-mentioned temperature is that when the temperature is lower than 600 ° C., the glass frit is softened during the debinding step, and as a result, the debinding failure in the paste occurs and the wiring is formed. This is because the adhesive strength of the circuit layer to the insulating substrate becomes unstable, and the insulating substrate warps. On the other hand, when the temperature exceeds 800 ° C., the sinterability of copper is deteriorated, and adverse effects such as deterioration of solder wettability, lowering of adhesive strength, and occurrence of substrate warpage are caused.

When the content of the glass frit is less than 0.1 parts by weight, the softening component is reduced and the gap between copper and glass ceramic insulating substrate or between copper and quartz glass can be filled. However, there are problems such as a decrease in the adhesion strength of the wiring circuit layer to the insulating substrate and a problem in that the substrate is warped. Conversely, if the amount exceeds 4 parts by weight, the glass component floats on the conductor surface at the end face of the via-hole conductor and adversely affects solder wettability.

When the content of quartz glass is set to the above-mentioned ratio, when the content is less than 0.1 part by weight, copper and glass are separately sintered and separated, and the glass floats on the surface of the wiring circuit layer, thereby causing the wiring. This is because it adversely affects the solder wettability of the circuit layer, and conversely, if it exceeds 4 parts by weight, the sinterability of copper is degraded and the solder wettability is adversely affected.

For via-hole conductors, it is desirable that the glass frit having a sag point of 600 to 800 ° C. with respect to the Cu component contains 2 to 15 parts by weight, and quartz glass contains 2 to 15 parts by weight.

When the yield point of the glass frit is limited to the above-mentioned temperature, if the temperature is lower than 600 ° C., the glass frit is softened during the debinding step, resulting in poor debinding and deterioration of the sintering of the via hole. As a result, unevenness occurs at the end of the via-hole conductor, and the airtightness of the via-hole conductor deteriorates. Conversely, when the temperature exceeds 800 ° C., the sinterability of copper is significantly deteriorated, the solder wettability and the airtightness are reduced, and irregularities are easily formed at the end of the via-hole conductor.

When the content of the glass frit is less than 2 parts by weight, the softening component is too small to fill the gap between the copper and the via hole wall or the gap between the copper and the quartz glass. Airtightness deteriorates. Conversely, if the amount exceeds 15 parts by weight, the glass component floats on the end face of the via-hole conductor, and the solder wettability deteriorates.

When the ratio of the quartz glass is less than 4 parts by weight, the copper and the glass are separately sintered and separated from each other, and the glass is raised on the surface of the copper body, which adversely affects the solder wettability. Furthermore, the glass component in the via hole portion flows out to the glass ceramic insulating substrate side, and the adverse effect is caused such that the insulating substrate around the via hole rises. Conversely 1
If it exceeds 5 parts by weight, the sinterability of copper is deteriorated, and adverse effects such as a decrease in solder wettability and a decrease in airtightness are caused.

The wiring circuit layer 3 on the surface of the multilayer wiring board
Are used as pads for mounting various electronic components 5 such as IC chips, as conductive films for shielding, and as terminal electrodes for connection to external circuits. It is joined via a conductive adhesive or the like. Although not shown, if necessary,
On the surface of the wiring substrate, a thick-film resistor film such as tantalum silicide or molybdenum silicide, a wiring protection film, or the like may be further formed.

Next, a method of manufacturing the glass ceramic wiring board of the present invention will be described. First, a glass component as described above, or a glass component and a ceramic filler are mixed to prepare a glass-ceramic composition, and after adding an organic binder to the mixture, a doctor blade method, a rolling method, a pressing method, etc. It is molded on a sheet to produce a green sheet.

Next, a Cu-based conductor paste for forming a wiring circuit layer and / or a via-hole conductor is prepared. This paste is composed of Cu as a Cu component or a mixture of Cu and Cu oxide such as Cu ₂ O and CuO. All of these have an average particle size of 0.1.
It is desirable to use spherical powder of 5 to 10 μm, preferably 3 to 5 μm. This is because if the average particle size is larger than 10 μm, fine wiring processing is difficult, and if the average particle size is smaller than 0.5 μm, the sintering of copper becomes remarkably fast, and the effect of adding glass frit or quartz glass is reduced. is there. The Cu oxide becomes substantially metallic Cu by firing in a reducing atmosphere.

According to the present invention, 1 to 15 parts by weight of a glass frit having a yield point of 600 to 800 ° C. and 1 to 15 parts by weight of quartz
15 parts by weight. The average particle size of the glass frit and the quartz glass is preferably 1 to 5 μm in order to achieve dispersibility and fine wiring. In other words, if the average particle size exceeds 5 μm, it becomes invulnerable to fine wiring processing,
If it is less than μm, it will be difficult to stably disperse it in the paste, forming aggregates and causing defects on the copper body surface.

In the conductor paste, an organic binder composed of an acrylic resin or the like and an organic solvent such as α-terpineol, dibutyl phthalate, butyl carbitol and the like are homogeneously mixed with the above-mentioned Cu-based conductor composition. It is prepared by Organic binder is Cu-based conductor composition 1
1 to 10 parts by weight based on 00 parts by weight, and the organic solvent component is 5 parts by weight.
It is desirable to mix them in a ratio of up to 30 parts by weight.

Next, the above-mentioned Cu-based conductor paste is printed and applied in a circuit pattern on the glass ceramic green sheet by a screen printing method or the like to form a wiring circuit layer. To form a via-hole conductor, a through hole having a diameter of 30 to 200 μm is formed in a green sheet by laser, micro drill, punching, or the like, and the inside is filled with a paste. After that, the green sheets on which the wiring patterns and the via-hole conductors are formed are laminated and pressed to form a laminate.

Thereafter, the laminate is subjected to heat treatment in a nitrogen atmosphere at 400 to 800 ° C. to decompose and remove organic components in the green sheet and the paste.
By sintering simultaneously in a nitrogen atmosphere, a multilayer wiring board having a wiring circuit layer and a via-hole conductor can be manufactured.

In the case where a Cu oxide is contained as a Cu component in the Cu-based conductor paste, the Cu oxide is removed by removing the binder, performing a reduction treatment in a hydrogen atmosphere or a nitrogen + steam atmosphere or the like, and firing. It can be converted to Cu.

[0040]

EXAMPLE 1 A green sheet for an insulating substrate was 43% by weight.
SiO ₂ -37% BaO-9% B ₂ O ₃ -6% Al ₂ O
₃ 5 Glass composition of -5% CaO (sag point 700 ° C.)
SiO ₂ as a filler component was a mixture of 50 vol% with respect to 0 vol%. An acrylic binder having a molecular weight of 300,000, a plasticizer, a dispersant, and a solvent were added and mixed, and the slurry was formed into a green sheet having an average thickness of 200 μm by a doctor blade method.

Next, the glass powder having an average particle diameter of 3 μm and the quartz glass powder having an average particle diameter of 2 μm were weighed at the ratio shown in Table 1 with respect to the copper powder having an average particle diameter of 5 μm. To 100 parts by weight of the Cu-based conductor composition, 2 parts by weight of an acrylic resin as an organic binder and 15 parts by weight of α-terpineol as an organic solvent were added and kneaded to prepare a conductive paste.

The following samples were prepared as samples for evaluating various characteristics by using the green sheet and the conductive paste thus obtained.

That is, as a sample for measuring the adhesive strength, a green sheet having a shape of 2 mm square and about 20 μm in thickness after firing was screen-printed on a green sheet, and five green sheets were pressure-laminated below the green sheet. Also, as a sample for evaluating substrate warpage, a 10 mm × 1
0mm, 20μm thick screen printing,
One green sheet was pressure-laminated under the lower part.

As a sample for evaluating the solder wettability, a circular pattern having a diameter of 0.1 mm was screen-printed on a green sheet, and five green sheets were laminated by pressing under the circular pattern. Next, in order to decompose and remove organic components such as an organic binder, the laminate on which the unfired wiring pattern is formed is heated at 700 ° C. in a nitrogen atmosphere at a temperature of 700 ° C.
After degreasing by holding for a time, the temperature was raised to 900 ° C. and held for 1 hour to prepare a wiring board. The sample N containing CuO
o. In 22 to 25, after debinding, 7 in hydrogen atmosphere
After reduction treatment at 50 ° C for 1 hour, 900
Calcination was carried out at ℃ for 1 hour.

In the obtained wiring board, a 2 mm square copper wiring layer is plated with Ni having a thickness of 1 μm, Au is plated thereon with a thickness of 0.1 μm, and then tin plating with a diameter of 0.8 mm is performed. Soldering the copper wire in equilibrium with the substrate on the plating coating layer, bending the tinned copper wire in a direction perpendicular to the substrate,
The tin-plated conductive wire was pulled vertically at a pulling speed of 10 mm / min, and the maximum load when the wire broke was evaluated as the adhesive strength of the copper wiring circuit layer. In addition, as a quality judgment, a case exceeding 2 kg / 2 mm square was determined as a good product.
Next, regarding the evaluation of the substrate warpage, 10 mm × 10 mm
In the diagonal direction (14.2 mm) was measured as the surface roughness diameter of the contact type. It should be noted that the quality was determined as 50 μm / 14.2.
mm or less was regarded as a non-defective product.

The solder wettability was evaluated by applying a flux to the evaluation sample and immersing it in a eutectic solder maintained at 235 ° C. at a vertical angle of 45 ° for 5 seconds with a stereoscopic microscope. Pass / fail judgment was made when the entire surface of the pattern was wet with solder.

[0047]

[Table 1]

As is apparent from Table 1, Sample No. 1 in which the sag point of the glass frit was lower than 600 ° C., and the sag point was 8
Sample No. 5 higher than 00 ° C., Sample Nos. 6, 7 having less than 0.1 parts by weight of glass, Sample No. 13 having more than 15 parts by weight of glass, 0.1 weight of quartz glass Sample Nos. 14 and 15 with less than 15 parts by weight, and Sample No. 21 with a quartz glass content of more than 15 parts by weight, all of which have reduced adhesive strength due to insufficient sintering of the conductor, warpage of the substrate, and reduced solder wettability. There has occurred.

On the other hand, the samples Nos. 2 to 4 of the present invention
8 to 12, 16 to 20, and 22 to 25 all showed good results as Cu-based conductor compositions for wiring circuit layers. In Samples Nos. 11, 12, 19 and 20, △ was evaluated in terms of solder wettability, but this composition is effectively used when solder wettability is not required. .

Example 2 Evaluation of a Cu-based conductor composition for a via-hole conductor was performed as follows. A via hole having a diameter of 160 μm was formed in the green sheet prepared in the same manner as in Example 1.

On the other hand, for the copper powder having an average particle size of 5 μm, the glass powder having an average particle size of 3 μm and the quartz glass powder having an average particle size of 2 μm were weighed at the ratio shown in Table 2, and these Cu powders were weighed. To 100 parts by weight of the system conductor composition, 2 parts by weight of an acrylic resin as an organic binder and 15 parts by weight of α-terpineol as an organic solvent were added and kneaded to prepare a conductor paste.

Then, the above-mentioned Cu-based conductive paste was filled in the above-mentioned via hole, and three layers were laminated. Next, in order to decompose and remove organic components such as an organic binder, the laminate is degreased by holding at a temperature of 700 ° C. for 3 hours in a nitrogen atmosphere, and then heated to 900 ° C. and held for 1 hour to form a wiring. A substrate was prepared. Samples Nos. 47 to 50 were subjected to a reduction treatment at 750 ° C. for 1 hour in a hydrogen atmosphere after debinding, and then fired at 900 ° C. for 1 hour in a nitrogen atmosphere.

To evaluate the solder wettability of the obtained wiring board, Ni plating and Au plating were applied in the same manner as in Example 1 and then immersed in solder, the surface of the wiring was observed, and the entire surface of the wiring was observed. A sample to which solder was attached was evaluated as ○, and a sample in which a portion to which no solder was attached was present was evaluated as ×. In order to further confirm the airtightness, the sample was immersed in a fluorescent test solution for 2 hours, washed with running water for 30 seconds, and the presence or absence of leakage of the fluorescent solution from around the via-hole conductor by ultraviolet rays was confirmed. The sample was evaluated as x, and the sample without leakage was evaluated as ○. Further, the unevenness of the via-hole conductor was measured by a surface roughness meter. Regarding the unevenness of the via-hole conductor portion, the one in which the via-hole conductor protruded from the glass ceramic was represented by a positive value, and the one in which the via-hole conductor protruded was represented by a negative value.

[0054]

[Table 2]

As is clear from Table 2, Sample No. 26 having a sag point of the glass frit lower than 600 ° C., Sample No. 30 having a sag point of higher than 800 ° C., and a glass amount of more than 0.1 part by weight. Small sample No. 31, 32, glass amount is 15
Sample No. 38 which is larger than parts by weight, quartz glass amount is 0.1
In Samples Nos. 39 and 40, which are less than 15 parts by weight, and Sample No. 46, in which the amount of quartz glass is more than 15 parts by weight, solder wettability and airtightness are reduced due to insufficient sintering of the via-hole conductor. Or a problem such as an increase in the occurrence of irregularities around the via-hole conductor.

On the other hand, Sample Nos. 27 to 2 of the present invention
9, 33 to 37, 41 to 45, and 47 to 50 all exhibited good plating properties and airtightness, and the surface irregularities could be suppressed to ± 15 μm or less. Samples Nos. 8 and 16 are evaluated as Δ for solder wettability and airtightness. However, this composition is effective only when solder wettability and airtightness are not strictly required.

In the above two embodiments, the substrate structure is described as a laminate, but a predetermined glass ceramic sheet is formed by using the above-mentioned Cu-based conductor paste containing copper powder as a main component. A wiring board formed by forming a wiring pattern and integrally firing a green sheet and a predetermined wiring pattern may be used.

Even if the substrate structure is a laminated structure, only the internal wiring layer 2 may be baked simultaneously with the laminate, and the surface wiring layer may be formed on the already baked laminate by baking.

[0059]

As described in detail above, according to the present invention,
For an insulating substrate made of glass ceramics, C containing copper powder as a main component for providing a wiring circuit layer and a via hole conductor
By including a glass frit having a sag point of 600 to 800 ° C. and quartz glass in the u-based conductor composition, the adhesive strength is high for a wiring circuit layer, or a glass ceramic for filling a via hole for a via hole conductor. It has good wettability and high adhesive strength, and can match the firing shrinkage with glass ceramics during the firing process, has excellent simultaneous sinterability with glass ceramic substrates, and has a via hole conductor. A method for manufacturing a glass-ceramic wiring board can be provided which does not cause an abnormal form such as protruding or buried from the surface of the glass-ceramic insulating substrate.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a wiring board of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Wiring board 2 Insulating board 3 Wiring circuit layer 4 Via-hole conductor 5 Electronic component

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4E351 AA07 AA13 BB31 BB49 CC12 CC22 CC31 DD04 DD33 EE02 EE03 EE10 GG01 GG15 GG16 5G301 DA06 DA34 DD01

Claims (8)

[Claims] 1. A Cu component comprising Cu or a mixture of Cu and Cu oxide, and a Cu equivalent amount of the Cu component of 100
With respect to parts by weight, 0.1 to 15 parts by weight of a glass frit having a yield point of 600 to 800 ° C. and 0.1 to 15 parts by weight of quartz glass
A Cu-based conductor composition comprising 15 parts by weight. 2. A glass ceramic wiring board comprising: a glass ceramic insulating substrate; a wiring circuit layer formed on or in the insulating substrate; and a via-hole conductor for electrically connecting the wiring circuit layer. The wiring circuit layer and / or the via-hole conductor contain Cu as a main component and have a sagging point of 600 to 100 parts by weight of Cu.
A glass-ceramic wiring substrate comprising a conductor containing 0.1 to 15 parts by weight of a glass frit at 800 ° C. and 0.1 to 15 parts by weight of quartz glass. 3. The wiring circuit layer according to claim 1, wherein said wiring circuit layer is mainly composed of Cu,
It is characterized by comprising a conductor containing 0.1 to 4 parts by weight of a glass frit having a yield point of 600 to 800 ° C. and 0.1 to 4 parts by weight of quartz glass with respect to 100 parts by weight of u. The glass ceramic wiring board according to claim 2. 4. The via-hole conductor contains Cu as a main component and has a sag point of 600 to 80 with respect to 100 parts by weight of Cu.
4. The glass-ceramic wiring substrate according to claim 2, comprising a conductor containing 2 to 15 parts by weight of a glass frit at 0 ° C. and 2 to 15 parts by weight of quartz glass. 5. A via hole is formed in a green sheet formed by molding glass or a mixture of glass and a ceramic filler into a sheet, and Cu is formed in the via hole.
After filling the system-based conductor paste and printing and applying the Cu-based conductor paste on the surface of the green sheet in a circuit pattern to form a wiring circuit layer, 800 to 100
In the method for producing a glass ceramic wiring board which is fired at 0 ° C., the Cu-based conductor paste is based on Cu, or a Cu component composed of a mixture of Cu and Cu oxide, and 100 parts by weight of the Cu component in terms of Cu. , Yield point is 600 ~
A method for producing a glass ceramic wiring board, comprising: a glass frit at 800 ° C. in a ratio of 0.1 to 15 parts by weight and a quartz glass in a ratio of 0.1 to 15 parts by weight. 6. A Cu-based conductor paste for forming said wiring circuit layer is bent against Cu or a Cu component composed of a mixture of Cu and Cu oxide and 100 parts by weight of the Cu component in terms of Cu. 6. The method for producing a glass ceramic wiring board according to claim 5, comprising 0.1 to 4 parts by weight of glass frit having a temperature of 600 to 800 [deg.] C. and 0.1 to 4 parts by weight of quartz glass. . 7. A Cu-based conductor paste filled in the via hole has a sag point with respect to Cu or a Cu component composed of a mixture of Cu and Cu oxide and 100 parts by weight of the Cu component in terms of Cu. The method for producing a glass ceramic wiring substrate according to claim 5 or 6, wherein the glass frit at 600 to 800 ° C is contained in a proportion of 2 to 15 parts by weight and the quartz glass in a proportion of 2 to 15 parts by weight. 8. The method according to claim 5, wherein the glass frit in the Cu-based conductor composition is the same as the glass in the green sheet.