JPH1154660A - Wiring substrate - Google Patents

Wiring substrate

Info

Publication number
JPH1154660A
JPH1154660A JP20603297A JP20603297A JPH1154660A JP H1154660 A JPH1154660 A JP H1154660A JP 20603297 A JP20603297 A JP 20603297A JP 20603297 A JP20603297 A JP 20603297A JP H1154660 A JPH1154660 A JP H1154660A
Authority
JP
Japan
Prior art keywords
low
wiring
insulating base
connection pad
glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20603297A
Other languages
Japanese (ja)
Other versions
JP3426920B2 (en
Inventor
Yoji Furukubo
洋二 古久保
Hideto Yonekura
秀人 米倉
Koichi Yamaguchi
浩一 山口
Masaya Kokubu
正也 國分
Kenichi Nagae
謙一 永江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP20603297A priority Critical patent/JP3426920B2/en
Publication of JPH1154660A publication Critical patent/JPH1154660A/en
Application granted granted Critical
Publication of JP3426920B2 publication Critical patent/JP3426920B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To obtain a low-cost wiring substrate, having a wiring pattern which comprises low-resistance wiring conductor sufficiently resistant to thermal and mechanical stresses and has improved adhesion strength by simultaneously sintering the low-resistance wiring conductor and ceramic insulating base, and covering the peripheral portion of the wiring pattern, comprising fine and high- density low-resistance wiring conductor, with glass component of the insulating base having high precision, without requiring printing process. SOLUTION: In a wiring substrate 1 formed by sintering a molded body containing alkali silicon glass by 20 to 80 vol.% and residue of filler containing metal oxide having a thermal expansion coefficient equal to or higher than 6 ppm/ deg.C at 40 to 400 deg.C, a peripheral portion 4 of a connection pad 3 is covered with a coating layer 6 which contains a glass component of insulating base 2, with a width of 10 to 100 μm from the periphery. Further, the distance between a top portion 7 of the coating layer 6 and the surface of exposed connection pad is set at within 5 μm.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体素子が収容
搭載される半導体素子収納用パッケージや、半導体素子
の他にコンデンサや抵抗体等の各種電子部品が搭載され
る混成集積回路装置等、とりわけ半導体素子の表面電極
を配線基板の配線用電極に直接接続する、あるいは配線
基板を外部電気回路基板に表面実装するに好適な微細か
つ接着強度の高い低抵抗の配線導体パターンを有する配
線基板に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package for accommodating a semiconductor device, a hybrid integrated circuit device for mounting various electronic parts such as a capacitor and a resistor in addition to the semiconductor device, and more particularly to a hybrid integrated circuit device. The present invention relates to a wiring board having a fine, high-adhesion strength, low-resistance wiring conductor pattern suitable for directly connecting a surface electrode of a semiconductor element to a wiring electrode of a wiring board or surface mounting a wiring board on an external electric circuit board. It is.

【0002】[0002]

【従来の技術】従来より、ICやLSI等の半導体素子
を収容する半導体素子収納用パッケージや、半導体素子
の他に各種電子部品を搭載した混成集積回路装置等の各
種配線基板用絶縁基体としては、電気絶縁性や化学的安
定性等の特性に優れていることからアルミナ質セラミッ
クスが多用されてきた。
2. Description of the Related Art Conventionally, as an insulating base for various wiring substrates such as a package for accommodating a semiconductor element such as an IC or an LSI or a hybrid integrated circuit device having various electronic components mounted thereon in addition to the semiconductor element. Alumina ceramics have been widely used because of their excellent properties such as electrical insulation and chemical stability.

【0003】しかし、近年、高周波化及び高密度化が進
むICやLSI等の半導体素子を搭載する配線基板に
は、前記アルミナ質セラミックスから成る絶縁基体より
も更に低い誘電率と、より低い配線抵抗が要求されるよ
うになり、かかる絶縁基体としてはガラスセラミックス
が、また前記ガラスセラミックスと同時焼成できる焼成
温度が低い低抵抗導体としては、例えば、銅(Cu)や
金(Au)、銀(Ag)で配線を形成することが注目さ
れるようになっている。
However, in recent years, a wiring board on which a semiconductor element such as an IC or an LSI which has been operated at a higher frequency and a higher density is mounted has a lower dielectric constant and a lower wiring resistance than the insulating base made of alumina ceramics. Glass insulators are required as such insulating substrates, and low-resistance conductors that can be co-fired with the glass ceramics and have low firing temperatures include, for example, copper (Cu), gold (Au), and silver (Ag). ) Is attracting attention.

【0004】前記ガラスセラミックスから成る絶縁基体
は、高周波化及び高密度化が進む通信分野で使用する配
線基板用に、低抵抗導体と組み合わせたガラスセラミッ
ク配線基板として開発が進められており、とりわけ低抵
抗導体として銅による配線化が鋭意開発されている。
An insulating substrate made of the above glass ceramic has been developed as a glass ceramic wiring board combined with a low-resistance conductor for a wiring board used in a communication field where the frequency and density are increasing. Wiring using copper as a resistance conductor has been eagerly developed.

【0005】係るガラスセラミック配線基板は、例え
ば、ガラスセラミック原料粉末と有機バインダー、溶媒
を用いて調製した泥漿をドクターブレード法等のシート
成形方法で成形した後、得られたガラスセラミックグリ
ーンシートにビアホール等を打ち抜き加工し、該グリー
ンシート上に銅メタライズ組成物を含む銅ペーストを用
いて所定の配線パターンを従来周知のスクリーン印刷法
等の厚膜手法により印刷形成すると共に、前記ビアホー
ルにも銅ペーストを充填した後、それらを複数枚加圧積
層し、次いで該積層体を加熱してバインダーを除去した
後、焼成することにより作製されていた。
[0005] Such a glass ceramic wiring board is formed, for example, by forming a slurry prepared using a glass ceramic raw material powder, an organic binder and a solvent by a sheet forming method such as a doctor blade method, and then forming a via hole in the obtained glass ceramic green sheet. And the like, and a predetermined wiring pattern is printed and formed on the green sheet by using a copper paste containing a copper metallizing composition by a conventionally known thick film method such as a screen printing method. , A plurality of them are laminated under pressure, and then the laminate is heated to remove the binder, and then fired.

【0006】しかし前記銅ペーストは、ガラスセラミッ
クスとの濡れ性に問題があるため、形成された配線導体
とガラスセラミック磁器との接着強度が低く、ピンある
いはボール付け用のパッド部等、高い接着強度を要求さ
れる部分では熱的、機械的な応力が加わると剥離し易い
という問題があった。
However, since the copper paste has a problem in wettability with glass ceramics, the adhesive strength between the formed wiring conductor and the glass ceramic porcelain is low, and high adhesive strength such as a pad portion for a pin or a ball is used. However, there has been a problem that the parts that require the above-mentioned properties are easily peeled off when a thermal or mechanical stress is applied.

【0007】そこで、前記接着強度を改善するために、
図3に示すように絶縁基体表面12に設けた配線パター
ン13の周縁部14を、セラミックスを主成分とするペ
ーストやセラミックグリーンシートから成る被覆層15
で覆って焼成一体化した配線基板16が各種提案されて
いる(特開平2−130845号公報、特開昭59−2
6986号公報参照)。
Therefore, in order to improve the adhesive strength,
As shown in FIG. 3, the peripheral portion 14 of the wiring pattern 13 provided on the insulating substrate surface 12 is covered with a coating layer 15 made of a paste containing ceramic as a main component or a ceramic green sheet.
There have been proposed various wiring substrates 16 which are covered and fired and integrated (Japanese Patent Laid-Open Nos. 2-130845 and 59-2).
No. 6986).

【0008】[0008]

【発明が解決しようとする課題】しかしながら、前記提
案の配線基板では接着強度の向上はできるものの、スク
リーン印刷法の印刷位置精度、またはセラミックグリー
ンシート自体の伸び縮みによる寸法精度やその積層位置
精度から、配線パターンの周縁部14での被覆層の幅1
7は100μm以上であることが必要となるため、微細
な配線加工技術が要求されるフリップチップ接続部や、
配線幅の狭いワイヤーボンディングパターン等には適用
困難であるという課題があった。
However, although the bonding strength can be improved with the proposed wiring board, the printing position accuracy of the screen printing method, the dimensional accuracy due to expansion and contraction of the ceramic green sheet itself, and the stacking position accuracy thereof are not sufficient. The width 1 of the covering layer at the peripheral portion 14 of the wiring pattern.
7 is required to be 100 μm or more, so that a flip-chip connecting portion requiring fine wiring processing technology,
There is a problem that it is difficult to apply to a wire bonding pattern or the like having a narrow wiring width.

【0009】その上、前記ペーストを用いて被覆する場
合には、原料粉末とバインダー、溶媒、分散剤とを混合
して該ペーストを調製した後、スクリーン印刷法により
グリーンシート上の所定位置に印刷塗布しなければなら
ないため、工程数が増加して製造コスト上昇の一因にな
るという課題もあった。
In addition, when coating with the paste, the paste is prepared by mixing the raw material powder with a binder, a solvent and a dispersant, and then printed at a predetermined position on a green sheet by a screen printing method. There is also a problem that the number of steps increases due to the necessity of application, which contributes to an increase in manufacturing cost.

【0010】[0010]

【発明の目的】本発明は前記課題を解消せんとして成さ
れたもので、その目的は、低抵抗配線導体とセラミック
絶縁基体とを同時焼成することができ、別途、スクリー
ン印刷法等による印刷工程を必要とせずに、微細かつ高
密度な低抵抗配線導体から成る接続パッド部等、高い接
着強度を要求される配線パターンの周縁部を、セラミッ
ク絶縁基体の組成成分で精度良く被覆でき、前記低抵抗
配線導体から成る配線パターンの接着強度を向上させる
と共に、熱的、機械的応力に対して充分耐え得る低抵抗
配線導体から成る配線パターンを有する、低コストの配
線基板を提供することにある。
SUMMARY OF THE INVENTION The object of the present invention is to solve the above-mentioned problems, and an object of the present invention is to enable simultaneous firing of a low-resistance wiring conductor and a ceramic insulating substrate, and to separately perform a printing step by a screen printing method or the like. It is possible to cover the peripheral portion of a wiring pattern requiring high adhesive strength, such as a connection pad portion made of a fine and high-density low-resistance wiring conductor, with high precision with the composition component of the ceramic insulating base without the need for It is an object of the present invention to provide a low-cost wiring board having a wiring pattern made of a low-resistance wiring conductor that can improve the adhesive strength of a wiring pattern made of a resistance wiring conductor and sufficiently withstand thermal and mechanical stress.

【0011】[0011]

【課題を解決するための手段】本発明者等は、前記課題
に鑑み鋭意検討した結果、絶縁基体を構成するセラミッ
ク焼結体の組成と焼成温度や焼成時間、焼成雰囲気等の
焼成条件を制御することにより、絶縁基体の組成成分の
内、ガラス成分が低抵抗配線導体粒子間に浸透したり、
低抵抗配線導体から成る配線パターン表面に滲出したり
して、該配線パターンの周縁部を再現性良く、高精度に
被覆できることを知見した。
Means for Solving the Problems The present inventors have conducted intensive studies in view of the above-mentioned problems, and as a result, have controlled the composition of the ceramic sintered body constituting the insulating substrate and the firing conditions such as the firing temperature, firing time, and firing atmosphere. By doing, among the constituent components of the insulating base, the glass component permeates between the low-resistance wiring conductor particles,
It has been found that the periphery of the wiring pattern can be covered with good reproducibility and high accuracy by oozing onto the surface of the wiring pattern made of the low-resistance wiring conductor.

【0012】即ち、本発明の配線基板は、20〜80体
積%のアルカリ珪酸ガラスと、40〜400℃における
熱膨張係数が6ppm/℃以上である金属酸化物を含む
フィラーを80〜20体積%の割合で含有して成る絶縁
基体の成形体と、低抵抗配線導体から成る配線パターン
を、非酸化性雰囲気下、850〜1080℃の温度で同
時焼成してセラミック焼結体から成る絶縁基体に低抵抗
配線導体から成る配線パターンを一体的に形成すること
により、絶縁基体表面に被着形成した前記配線パターン
を成す入出力用の接続パッド部の周縁部が、該周縁より
それぞれ10〜100μmの幅で前記絶縁基体から滲出
したガラス成分から成る被覆層で覆われ、かつ前記被覆
層の最頂部と露出している接続パッド部の表面との高低
差が、最大で5μmであることを特徴とするものであ
る。
That is, the wiring board of the present invention contains 20 to 80% by volume of alkali silicate glass and 80 to 20% by volume of a filler containing a metal oxide having a thermal expansion coefficient of 6 ppm / ° C. or more at 40 to 400 ° C. And a wiring pattern made of a low-resistance wiring conductor are simultaneously fired at a temperature of 850 to 1080 ° C. in a non-oxidizing atmosphere to form an insulating base made of a ceramic sintered body. By integrally forming a wiring pattern composed of a low-resistance wiring conductor, the peripheral portions of the input / output connection pad portions forming the wiring pattern adhered to the surface of the insulating base are each 10 to 100 μm from the peripheral edge. The height difference between the top of the coating layer and the exposed surface of the connection pad portion is at most 5 μm, which is covered with a coating layer made of a glass component that has oozed out of the insulating substrate at a width. It is characterized by being.

【0013】[0013]

【作用】本発明によれば、低抵抗配線導体から成る配線
パターンを一体的に焼成した配線基板が、絶縁基体を構
成するセラミック焼結体の組成と焼成条件を設定して成
ることから、前記セラミック焼結体中のガラス成分の粘
度が低下して軟化流動状態となり、低抵抗配線導体を構
成する低抵抗導体粒子間に浸透したり、あるいは軟化し
たガラス成分が前記配線パターンの表面に滲出したりし
て、該配線パターンの周縁部が一定の幅で被覆され、更
に前記セラミック焼結体の組成と前記焼成条件を制御す
ることにより配線パターンの周縁部の被覆率を調整する
ことが可能となり、低抵抗配線導体から成る配線パター
ンと絶縁基体との接着強度を確保できることになる。
According to the present invention, the composition and the sintering conditions of the ceramic sintered body constituting the insulating base are set in the wiring board obtained by integrally sintering the wiring pattern composed of the low-resistance wiring conductor. The viscosity of the glass component in the ceramic sintered body is reduced to be in a softened and fluidized state, and penetrates between the low-resistance conductor particles constituting the low-resistance wiring conductor, or the softened glass component oozes out on the surface of the wiring pattern. As a result, the peripheral portion of the wiring pattern is covered with a constant width, and it is possible to adjust the coverage of the peripheral portion of the wiring pattern by controlling the composition of the ceramic sintered body and the firing conditions. In addition, the adhesive strength between the wiring pattern made of the low-resistance wiring conductor and the insulating base can be secured.

【0014】[0014]

【発明の実施の形態】以下、本発明の配線基板を図面に
基づき詳細に述べる。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a wiring board according to the present invention will be described in detail with reference to the drawings.

【0015】図1は本発明の配線基板に設けた低抵抗配
線導体から成る入出力用の接続パッド部の周縁部が絶縁
基体から滲出したガラス成分から成る被覆層で被覆され
た状態を示す要部断面図であり、図2は図1に示す要部
の平面図である。
FIG. 1 shows a state in which the periphery of an input / output connection pad portion made of a low-resistance wiring conductor provided on a wiring board of the present invention is covered with a coating layer made of a glass component that has oozed from an insulating base. FIG. 2 is a partial sectional view, and FIG. 2 is a plan view of a main part shown in FIG.

【0016】図1乃び図2において、1は絶縁基体2の
表面に設けた接続パッド部3と、接続パッド部の周縁部
4を覆う被覆層6とから成る配線基板である。
In FIGS. 1 and 2, reference numeral 1 denotes a wiring board comprising a connection pad portion 3 provided on the surface of an insulating base 2 and a coating layer 6 covering a peripheral portion 4 of the connection pad portion.

【0017】前記配線基板1は、絶縁基体2を構成する
ガラス成分から成る被覆層6が、接続パッド部の周縁部
4の周縁から10〜100μmの幅5で接続パッド部3
を覆い、被覆層の最頂部7と露出した接続パッド部表面
との高低差8が5μm以内となるものである。
In the wiring board 1, the coating layer 6 made of a glass component constituting the insulating base 2 has a width 5 of 10 to 100 μm from the periphery of the peripheral portion 4 of the connection pad portion.
And the height difference 8 between the top portion 7 of the coating layer and the exposed surface of the connection pad portion is within 5 μm.

【0018】本発明の配線基板において、絶縁基体を構
成する焼結体は、アルカリ珪酸ガラスを20〜80体積
%と、40〜400℃における熱膨張係数が6ppm/
℃以上の金属酸化物を含むフィラーを80〜20体積%
の割合で含有して成る成形体を焼成してなるものであ
る。
In the wiring board according to the present invention, the sintered body constituting the insulating base contains 20 to 80% by volume of alkali silicate glass and a thermal expansion coefficient at 40 to 400 ° C. of 6 ppm /
80 to 20% by volume of a filler containing a metal oxide having a temperature of at least
Of a molded body containing the above-mentioned composition at a ratio of 2.

【0019】前記アルカリ珪酸ガラス成分量が20体積
%より少ない、換言すればフィラー成分が80体積%よ
り多いと液相焼結することができず、高温で焼成しなけ
ればならず、その場合には低抵抗配線導体が溶融してし
まい同時焼成できない。
If the content of the alkali silicate glass component is less than 20% by volume, in other words, if the content of the filler component is more than 80% by volume, liquid phase sintering cannot be performed, and firing at a high temperature must be performed. The low-resistance wiring conductor melts and cannot be fired simultaneously.

【0020】また、アルカリ珪酸ガラス成分量が80体
積%より多い、換言すればフィラー成分が20体積%よ
り少ないと焼結体の特性がアルカリ珪酸ガラスの特性に
大きく依存してしまい、材料特性の制御が困難になると
共に焼結開始温度が低くなり過ぎ、前記同様に同時焼成
できないだけでなく、原料コストの増加を招くことにな
る。
If the content of the alkali silicate glass component is more than 80% by volume, in other words, if the filler component is less than 20% by volume, the properties of the sintered body greatly depend on the properties of the alkali silicate glass, and Control becomes difficult and the sintering start temperature becomes too low, so that simultaneous sintering cannot be performed as described above, and also the cost of raw materials increases.

【0021】前記アルカリ珪酸ガラスとしては、特に限
定されるものではないが、低抵抗配線導体、とりわけC
uとの熱膨張差を小さくすることができ、絶縁基体との
接着強度を向上する点ではリチウム系結晶化ガラスが望
ましく、なかでもLi2 Oを5〜30重量%、特に5〜
20重量%の割合で含有するリチウム珪酸ガラスが、焼
成過程で高熱膨張係数を有するリチウム珪酸を析出させ
ることができることから好適である。
The alkali silicate glass is not particularly limited, but may be a low-resistance wiring conductor, especially C
The lithium-based crystallized glass is desirable in that the thermal expansion difference with u can be reduced, and the bonding strength with the insulating substrate is improved, and Li 2 O is preferably 5 to 30% by weight, particularly 5 to 30% by weight.
Lithium silicate glass containing 20% by weight is preferable because lithium silicate having a high coefficient of thermal expansion can be precipitated during the firing process.

【0022】尚、前記Li2 Oはその含有量が5重量%
未満では、焼成時にリチウム珪酸の結晶生成量が少なく
高熱膨張化が期待できず、30重量%を越えると誘電正
接が100×10-4を越える傾向がある。
The Li 2 O has a content of 5% by weight.
If it is less than 3, the amount of lithium silicic acid crystal generated during firing is small and high thermal expansion cannot be expected. If it exceeds 30% by weight, the dielectric loss tangent tends to exceed 100 × 10 −4 .

【0023】また、前記リチウム珪酸ガラスの屈伏点
は、Cu等の低抵抗配線導体との同時焼結性及び有機バ
インダーの除去性を考慮すれば、400〜800℃、特
に400〜650℃が望ましい。
The yield point of the lithium silicate glass is preferably from 400 to 800 ° C., particularly preferably from 400 to 650 ° C. in consideration of simultaneous sintering with a low-resistance wiring conductor such as Cu and removal of an organic binder. .

【0024】更に、結晶性ガラスの40〜400℃にお
ける熱膨張係数が6〜18ppm/℃、特に7〜13p
pm/℃であることが、フィラーとの熱膨張差を生ぜ
ず、焼結体強度が高く維持でき、フィラーの熱膨張係数
が6ppm/℃未満の場合には焼結体の高熱膨張化は困
難となる。
Further, the crystalline glass has a coefficient of thermal expansion at 40 to 400 ° C. of 6 to 18 ppm / ° C., especially 7 to 13 p.
When the thermal expansion coefficient is pm / ° C., the sintered body strength can be maintained high without causing a difference in thermal expansion with the filler, and when the thermal expansion coefficient of the filler is less than 6 ppm / ° C., it is difficult to increase the thermal expansion of the sintered body. Becomes

【0025】従って、この特性を満足する結晶性ガラス
としては、例えば、 SiO2 −Li2 O−Al2 3 SiO2 −Li2 O−Al2 3 −MgO−TiO2 SiO2 −Li2 O−Al2 3 −MgO−Na2 O−
F SiO2 −Li2 O−Al2 3 −K2 O−Na2 O−
ZnO SiO2 −Li2 O−Al2 3 −K2 O−P2 5 SiO2 −Li2 O−Al2 3 −K2 O−P2 5
ZnO−Na2 O SiO2 −Li2 O−MgO SiO2 −Li2 O−ZnO 等の組成物が挙げられ、前記SiO2 はリチウム珪酸を
形成するための必須成分であり、ガラス全量中の60〜
85重量%の割合で存在し、SiO2 とLi2 Oとの合
計量がガラス全量中、65〜95重量%であることが、
リチウム珪酸結晶を析出させる点で望ましい。
Therefore, as a crystalline glass satisfying this property, for example, SiO 2 —Li 2 O—Al 2 O 3 SiO 2 —Li 2 O—Al 2 O 3 —MgO—TiO 2 SiO 2 —Li 2 O-Al 2 O 3 -MgO- Na 2 O-
F SiO 2 —Li 2 O—Al 2 O 3 —K 2 O—Na 2 O—
ZnO SiO 2 —Li 2 O—Al 2 O 3 —K 2 O—P 2 O 5 SiO 2 —Li 2 O—Al 2 O 3 —K 2 O—P 2 O 5
A composition such as ZnO—Na 2 O SiO 2 —Li 2 O—MgO SiO 2 —Li 2 O—ZnO is mentioned. The SiO 2 is an essential component for forming lithium silicic acid, and 60% of the total amount of glass. ~
85% by weight, and the total amount of SiO 2 and Li 2 O is 65 to 95% by weight in the total amount of glass.
It is desirable in that lithium silicate crystals are precipitated.

【0026】尚、前記リチウム珪酸ガラス中には、B2
3 は1重量%以下であることが望ましい。
The lithium silicate glass contains B 2
O 3 is desirably 1% by weight or less.

【0027】一方、前記リチウム珪酸ガラスと複合させ
る40〜400℃における熱膨張係数が6ppm/℃以
上の金属酸化物を含むフィラー成分としては、クリスト
バライト(SiO2 )、クォーツ(SiO2 )、トリジ
マイト(SiO2 )、フォルステライト(2MgO・S
iO2 )、スピネル(MgO・Al2 3 )、ウォラス
トナイト(CaO・SiO2 )、モンティセラナイト
(CaO・MgO・SiO2 )、ネフェリン(Na2
・Al2 3 ・SiO2 )、リチウムシリケート(Li
2 O・SiO2 )、ジオプサイド(CaO・MgO・2
SiO2 )、メルビナイト(3CaO・MgO・2Si
2 )、アケルマイト(2CaO・MgO・2Si
2 )、マグネシア(MgO)、アルミナ(Al
2 3 )、カーネギアイト(Na2 O・Al2 3 ・2
SiO2 )、エンスタタイト(MgO・SiO2 )、ホ
ウ酸マグネシウム(2MgO・B2 3 )、セルシアン
(BaO・Al2 3 ・2SiO2 )、B2 3 ・2M
gO・2SiO2 、ガーナイト(ZnO・Al
2 3 )、ペタライト(LiAlSi4 10)の群から
選ばれる少なくとも一種以上が挙げられる。
On the other hand, as filler components containing a metal oxide having a thermal expansion coefficient of 6 ppm / ° C. or more at 40 to 400 ° C. combined with the lithium silicate glass, cristobalite (SiO 2 ), quartz (SiO 2 ), tridymite ( SiO 2 ), forsterite (2MgOS
iO 2), spinel (MgO · Al 2 O 3) , wollastonite (CaO · SiO 2), Monty Sera Knight (CaO · MgO · SiO 2) , nepheline (Na 2 O
・ Al 2 O 3 .SiO 2 ), lithium silicate (Li
2 O.SiO 2 ), diopside (CaO.MgO.2)
SiO 2 ), melvinite (3CaO.MgO.2Si)
O 2 ), Akermite (2CaO.MgO.2Si)
O 2 ), magnesia (MgO), alumina (Al
2 O 3), Kanegiaito (Na 2 O · Al 2 O 3 · 2
SiO 2 ), enstatite (MgO.SiO 2 ), magnesium borate (2MgO.B 2 O 3 ), celsian (BaO.Al 2 O 3 .2SiO 2 ), B 2 O 3 .2M
gO.2SiO 2 , garnite (ZnO.Al
2 O 3 ) and petalite (LiAlSi 4 O 10 ).

【0028】特に、前記でも熱膨張係数が8ppm/℃
以上の金属酸化物を含むものが好適であり、前記フィラ
ー中にはその添加により最終焼結体の熱膨張係数が18
ppm/℃を越える場合があり、その際には熱膨張係数
の小さい他のフィラーを混合して熱膨張係数を適宜制御
することが必要である。
In particular, even in the above case, the coefficient of thermal expansion is 8 ppm / ° C.
Those containing the above metal oxides are preferable, and the filler has a thermal expansion coefficient of 18 due to its addition.
It may exceed ppm / ° C., in which case it is necessary to appropriately control the coefficient of thermal expansion by mixing other fillers having a small coefficient of thermal expansion.

【0029】尚、前記アルカリ珪酸ガラスとフィラーの
混合物は、公知の成形用有機バインダーを添加した後、
所望の成形手段で、例えばドクターブレード法や圧延
法、金型プレス等によりシート状に任意の形状に成形
後、焼成する。
The mixture of the alkali silicate glass and the filler is added with a known organic binder for molding,
The sheet is shaped into an arbitrary shape by a desired forming means, for example, by a doctor blade method, a rolling method, a die press or the like, and then fired.

【0030】次に、低抵抗配線導体としては前記Au、
Ag、Cuの他に、アルミニウム(Al)、ニッケル
(Ni)等の良電気伝導性金属あるいはそれらの化合物
等も好適に用いることができる上、それらを併用するこ
とも可能であるが、前記絶縁基体との同時焼結性からは
Cuが最適である。
Next, as the low-resistance wiring conductor, Au,
In addition to Ag and Cu, good electrical conductive metals such as aluminum (Al) and nickel (Ni) or compounds thereof can be suitably used, and they can be used in combination. Cu is optimal from the viewpoint of simultaneous sintering with the substrate.

【0031】また、前記低抵抗配線導体は、スクリーン
印刷法による配線パターンの印刷精度や鮮明度の点から
平均粒径が1〜10μmの球状あるいは近球状粉末を用
いるのが好ましく、とりわけ平均粒径が3〜6μmがよ
り望ましい。
The low-resistance wiring conductor is preferably a spherical or near-spherical powder having an average particle size of 1 to 10 μm from the viewpoint of printing accuracy and sharpness of a wiring pattern by a screen printing method. Is more preferably 3 to 6 μm.

【0032】次に、前記低抵抗配線導体を用いて配線用
ペーストを調製する場合、該低抵抗配線導体粉末に添加
される有機ビヒクル中のバインダーには、窒素雰囲気中
での熱分解性が優れたアクリル系バインダーが、具体的
には分子量が50万以下のアクリル樹脂を用いるのが望
ましく、前記ビヒクルの溶剤にはジブチルフタレート、
ジオクチルフタレート、テルピネオール、ブチルカルビ
トール等が好適であり、前記バインダーの量としては
1.0〜10.0重量%が好適である。
Next, when a wiring paste is prepared using the low-resistance wiring conductor, the binder in the organic vehicle added to the low-resistance wiring conductor powder has excellent thermal decomposability in a nitrogen atmosphere. The acrylic binder, specifically, it is desirable to use an acrylic resin having a molecular weight of 500,000 or less, dibutyl phthalate as the solvent of the vehicle,
Dioctyl phthalate, terpineol, butyl carbitol and the like are suitable, and the amount of the binder is preferably 1.0 to 10.0% by weight.

【0033】尚、低抵抗配線導体と絶縁基体とを同時焼
成する際の収縮挙動の調整や両者の接着強度の向上の点
から、高軟化点を有するガラスあるいはAl2 3 、M
gO、SiO2 等の金属酸化物を添加することも可能で
ある。
From the viewpoint of adjusting the shrinkage behavior when simultaneously firing the low-resistance wiring conductor and the insulating base and improving the adhesive strength between the two, glass having a high softening point or Al 2 O 3 , M
It is also possible to add a metal oxide such as gO or SiO 2 .

【0034】次に、焼成に先立ち、前記有機バインダー
を100〜700℃の温度範囲で窒素雰囲気中、分解除
去するが、この際、前記有機バインダーの分解除去のし
易さからは成形体の収縮開始温度は700〜850℃程
度であることが望ましく、成形体中のガラス成分の特
性、特に屈伏点を前述のように制御することが肝要であ
る。
Next, prior to firing, the organic binder is decomposed and removed in a nitrogen atmosphere at a temperature in the range of 100 to 700 ° C. At this time, the compact is shrunk due to the ease of decomposition and removal of the organic binder. The starting temperature is desirably about 700 to 850 ° C., and it is important to control the properties of the glass component in the molded body, particularly the sagging point as described above.

【0035】一方、焼成は最終の絶縁基体の相対密度が
90%以上まで緻密化する必要があるため、非酸化性雰
囲気中、特に簡便さからは成分調整した窒素雰囲気中で
行うが、焼成温度が850℃未満では緻密化できず、1
080℃を越えると前記同時焼成で低抵抗配線導体が溶
融し、配線パターンを形成することができない。
On the other hand, the sintering is required to be carried out in a non-oxidizing atmosphere, particularly in a nitrogen atmosphere in which the components are adjusted for simplicity, since it is necessary to densify the final insulating substrate to a relative density of 90% or more. Is less than 850 ° C.,
When the temperature exceeds 080 ° C., the low-resistance wiring conductor is melted by the co-firing, and a wiring pattern cannot be formed.

【0036】また、前記接続パッド部周縁部の幅が10
μm未満の場合には、該接続パッド部の接着強度向上の
効果が乏しく、100μmを越えるとフリップチップ接
続等の微細な配線パターンに対応できないことから、前
記幅は10〜100μmに限定される。
The width of the peripheral portion of the connection pad portion is 10
When the thickness is less than μm, the effect of improving the adhesive strength of the connection pad portion is poor. When the thickness exceeds 100 μm, it is not possible to cope with a fine wiring pattern such as flip-chip connection, so the width is limited to 10 to 100 μm.

【0037】次に、前記被覆層の最頂部と露出した接続
パッド部表面との高低差が5μm以上であると、配線基
板の反りやコプラナリティに影響を及ぼす恐れがあり、
望ましくない。
Next, if the height difference between the top of the coating layer and the exposed surface of the connection pad portion is 5 μm or more, there is a possibility that the warpage and coplanarity of the wiring board may be affected.
Not desirable.

【0038】また、得られた配線基板の配線パターンに
はその表面に酸化防止と半田濡れ性の向上のために、N
iメッキを厚さ1〜2μm、Auメッキを厚さ0.1μ
m程度、施すことが望ましい。
The wiring pattern of the obtained wiring board has N.sub.2 on the surface to prevent oxidation and improve solder wettability.
i plating is 1-2μm in thickness, Au plating is 0.1μ in thickness
It is desirable to apply about m.

【0039】尚、配線基板表面に形成された接続パッド
部以外の配線部については、直接、外部電気回路との接
続が不要である限り、前記ガラス成分から成る被覆層で
全面被覆されても何ら支障はない。
The wiring portion other than the connection pad portion formed on the surface of the wiring board may be covered with the coating layer made of the glass component as long as it is not necessary to directly connect to an external electric circuit. No problem.

【0040】[0040]

【実施例】本発明の配線基板を以下に示す一実施例に基
づき評価した。
EXAMPLES The wiring board of the present invention was evaluated based on one example shown below.

【0041】先ず、絶縁基体のガラスセラミック主成分
として、アルカリ珪酸ガラスとフィラー成分を表1に示
す種類と割合で混合したものを用い、これに分子量が3
0万のアクリル系バインダーと可塑剤、分散剤、溶剤を
加えて泥漿を調製し、該泥漿をドクターブレード法によ
り厚さが平均200μmのグリーンシートを成形した
後、複数の貫通孔を打ち抜き加工した。
First, as the glass ceramic main component of the insulating substrate, a mixture of an alkali silicate glass and a filler component in the kind and ratio shown in Table 1 was used.
A slurry was prepared by adding 100,000 acrylic binders, a plasticizer, a dispersant, and a solvent, and the slurry was formed into a green sheet having an average thickness of 200 μm by a doctor blade method, and then a plurality of through holes were punched out. .

【0042】一方、低抵抗配線導体としては平均粒径が
5μmの近球状銅粉100重量部に対して、軟化点が7
50℃のホウ珪酸ガラスを2重量部と、分子量が30万
のアクリル系バインダーを4重量部、テルピネオールを
3重量部、ジブチルフタレートを3重量部、ブチルカル
ビトールを3重量部添加して混練し、印刷用の銅ペース
トを調製した。
On the other hand, the low-resistance wiring conductor has a softening point of 7 with respect to 100 parts by weight of near-spherical copper powder having an average particle size of 5 μm.
2 parts by weight of borosilicate glass at 50 ° C., 4 parts by weight of an acrylic binder having a molecular weight of 300,000, 3 parts by weight of terpineol, 3 parts by weight of dibutyl phthalate, and 3 parts by weight of butyl carbitol are kneaded. A copper paste for printing was prepared.

【0043】次に、得られた銅ペーストを前記グリーン
シートの貫通孔に充填すると共に、該貫通孔上に平均2
0μmの厚さで直径0.5mmの円形のパターンと、更
に前記貫通孔以外のグリーンシート上に縦2mm、横2
mmの正方形のパターンを印刷形成し、このグリーンシ
ートを最上層として他のグリーンシートを複数枚積層し
て厚さが約15mmの積層体を作製した。
Next, the obtained copper paste was filled into the through-holes of the green sheet, and the average of 2
A circular pattern having a thickness of 0 μm and a diameter of 0.5 mm, and a pattern of 2 mm long and 2 mm wide on a green sheet other than the through holes.
A square pattern having a thickness of about 15 mm was formed by printing and forming a square pattern having a thickness of about 15 mm using the green sheet as the uppermost layer and stacking a plurality of other green sheets.

【0044】その後、雰囲気を調整した窒素ガス中、1
00〜700℃の温度で脱バインダー処理を施し、次い
で同様に調整した窒素雰囲気中、表1に示す焼成温度で
1時間焼成した。
Thereafter, in nitrogen gas whose atmosphere has been adjusted, 1
The binder was removed at a temperature of 00 to 700 ° C., and then fired for 1 hour at a firing temperature shown in Table 1 in a nitrogen atmosphere adjusted in the same manner.

【0045】尚、絶縁基体のガラスセラミック主成分と
して、硼珪酸系ガラスを用いたもの、及びフィラー成分
としてコージェライト、アノーサイト、ムライトを用い
たものを比較例とした。
In addition, comparative examples include those using borosilicate glass as the main component of the glass ceramic of the insulating substrate and those using cordierite, anorthite and mullite as the filler component.

【0046】[0046]

【表1】 [Table 1]

【0047】尚、表1のアルカリ珪酸ガラス及びフィラ
ーの種類は表2に示す通りである。
The types of the alkali silicate glass and the filler in Table 1 are as shown in Table 2.

【0048】[0048]

【表2】 [Table 2]

【0049】かくして得られた評価用の配線基板につい
て、前記円形のパターンの周縁部を覆うそれぞれの被覆
層の幅を、倍率が200倍のマイクロメーター付顕微鏡
を用いて十字状に4か所測定し、その平均値を求めた。
With respect to the wiring board for evaluation thus obtained, the width of each coating layer covering the periphery of the circular pattern was measured at four positions in a cross shape using a microscope equipped with a micrometer having a magnification of 200 times. Then, the average value was obtained.

【0050】尚、前記円形のパターンと同時に正方形の
パターンについても同様に被覆層の幅を測定したが、円
形のパターンとほぼ同一の値であることが確認できた。
The width of the covering layer was measured in the same manner for the circular pattern and the square pattern at the same time, and it was confirmed that the width was almost the same as that of the circular pattern.

【0051】一方、前記被覆層の最頂部と、露出した円
形のパターン表面との高低差は、前記評価用の配線基板
を切断して前記円形のパターンを通る断面を鏡面研磨
後、10重量%の塩化第二鉄水溶液でエッチング処理
し、金属顕微鏡でその構造を確認した後、走査型電子顕
微鏡で測定して最大値を高低差として評価した。
On the other hand, the height difference between the top of the coating layer and the exposed circular pattern surface was determined by cutting the wiring board for evaluation and polishing the cross section passing through the circular pattern to 10% by weight after mirror polishing. Was etched with an aqueous solution of ferric chloride, and its structure was confirmed with a metallographic microscope, and then measured with a scanning electron microscope to evaluate the maximum value as a height difference.

【0052】次いで前記評価用の配線基板を用いて、前
記正方形の配線パターン上に厚さ2μmのNiメッキと
厚さ0.1μmのAuメッキを順次被覆し、配線パター
ン全体に被着したものを可、一部あるいは全く被着して
いないものを不可としてメッキ性を評価すると共に、前
記配線パターン部に0.8mm径のスズメッキ導線を半
田付けした後、該導線を絶縁基体に対して垂直に折り曲
げ、オートグラフにより引張試験を行い、その測定値が
2.0kg/2mm角以下であるものを低抵抗配線導体
と絶縁基体との接着強度としては不足であると評価し
た。
Next, using the above-described wiring board for evaluation, the square wiring pattern was coated with Ni plating of 2 μm thickness and Au plating of 0.1 μm thickness sequentially, and the entire wiring pattern was covered. Possibility, a part that has not been adhered at all or not at all was evaluated as not being able to be plated, and a 0.8 mm diameter tin-plated lead was soldered to the wiring pattern portion, and then the lead was perpendicular to the insulating base. Bending and a tensile test were performed by an autograph, and those having a measured value of 2.0 kg / 2 mm square or less were evaluated as insufficient in adhesive strength between the low-resistance wiring conductor and the insulating base.

【0053】[0053]

【表3】 [Table 3]

【0054】表から明らかなように、比較例の試料番号
14、15、22、23、24では接着強度が2kg/
2mm角以下と低く、本発明の請求範囲外の試料番号
1、25はいずれも焼成温度が高く配線パターンの溶融
が認められ、同じく試料番号8、30では逆に焼成温度
が低く配線パターンが未焼結となり、配線パターンは全
くガラス成分で被覆されておらず、接着強度も1.0k
g/2mm角と極めて低い。
As is clear from the table, the adhesive strength of Sample Nos. 14, 15, 22, 23, and 24 of the comparative examples was 2 kg / kg.
Sample Nos. 1 and 25, which are less than 2 mm square, which are out of the claims of the present invention, both have a high firing temperature and melting of the wiring pattern is observed. Sintered, the wiring pattern is not covered with glass component at all, and the adhesive strength is 1.0k
g / 2 mm square and extremely low.

【0055】それに対して、本発明はガラス成分で被覆
されることにより接着強度も3.0kg/2mm角以上
と上昇しており、かつ被覆層と配線パターンとの高低差
は5μm以内であることが分かる。
On the other hand, according to the present invention, the coating strength is increased to not less than 3.0 kg / 2 mm square by coating with the glass component, and the height difference between the coating layer and the wiring pattern is within 5 μm. I understand.

【0056】尚、本発明は前記詳述した実施例に何ら限
定されるものではない。
The present invention is not limited to the above-described embodiment.

【0057】[0057]

【発明の効果】以上、詳述したように、本発明の配線基
板は、アルカリ珪酸ガラスとフィラーを含有して成る絶
縁基体の成形体と、低抵抗配線導体から成る配線パター
ンを、非酸化性雰囲気下で同時焼成して一体化し、絶縁
基体表面の接続パッド部の周縁部を、該周縁よりそれぞ
れ10〜100μmの幅で前記絶縁基体のガラス成分か
ら成る被覆層で覆い、かつ前記被覆層の最頂部と露出し
ている接続パッド部の表面との高低差が最大で5μmで
あることから、別途、スクリーン印刷法等による印刷工
程を必要とせずに、微細かつ高密度な低抵抗配線導体か
ら成る接続パッド部の周縁部を、セラミック絶縁基体の
組成成分で精度良く被覆でき、前記低抵抗配線導体から
成る配線パターンの接着強度を向上させることができる
と共に、熱的、機械的応力に対して充分耐え得る低抵抗
配線導体から成る配線パターンを有する低コストの配線
基板を得ることができる。
As described above in detail, the wiring board of the present invention is characterized in that a molded body of an insulating substrate containing an alkali silicate glass and a filler and a wiring pattern formed of a low-resistance wiring conductor are made of a non-oxidizing material. Simultaneous firing in an atmosphere to integrate, covering the periphery of the connection pad portion on the surface of the insulating substrate with a covering layer made of a glass component of the insulating substrate with a width of 10 to 100 μm from the periphery, and Since the height difference between the top and the exposed surface of the connection pad portion is 5 μm at the maximum, a fine and high-density low-resistance wiring conductor can be formed without a separate printing process such as a screen printing method. The peripheral portion of the connection pad portion can be covered with the composition component of the ceramic insulating base with high accuracy, the adhesive strength of the wiring pattern comprising the low-resistance wiring conductor can be improved, and thermal and mechanical It is possible to obtain a low-cost wiring board having a wiring pattern made of a low-resistance wiring conductor that can sufficiently withstand a mechanical stress.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の配線基板に設けた低抵抗配線導体から
成る入出力用の接続パッド部の周縁部が、絶縁基体から
滲出したガラス成分から成る被覆層で被覆された要部断
面図である。
FIG. 1 is a cross-sectional view of a main part in which a peripheral portion of an input / output connection pad portion made of a low-resistance wiring conductor provided on a wiring board of the present invention is covered with a coating layer made of a glass component oozing out of an insulating base. is there.

【図2】図1に示す要部の平面図である。FIG. 2 is a plan view of a main part shown in FIG.

【図3】従来の絶縁基体表面に設けた配線パターンの周
縁部を、セラミック泥漿やセラミックグリーンシートか
ら成る被覆層で覆った配線基板を示す要部断面図であ
る。
FIG. 3 is a cross-sectional view of a main part of a conventional wiring board in which a peripheral portion of a wiring pattern provided on the surface of an insulating base is covered with a coating layer made of ceramic slurry or ceramic green sheets.

【符号の説明】[Explanation of symbols]

1 配線基板 2 絶縁基体 3 接続パッド部 4 接続パッド部の周縁部 5 幅 6 被覆層 7 被覆層の最頂部 8 接続パッド部表面との高低差 DESCRIPTION OF SYMBOLS 1 Wiring board 2 Insulating base 3 Connection pad part 4 Peripheral part of connection pad part 5 Width 6 Coating layer 7 Top part of coating layer 8 Height difference from connection pad part surface

───────────────────────────────────────────────────── フロントページの続き (72)発明者 國分 正也 鹿児島県国分市山下町1番4号 京セラ株 式会社総合研究所内 (72)発明者 永江 謙一 鹿児島県国分市山下町1番4号 京セラ株 式会社総合研究所内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Masaya Kokubu 1-4 Yamashita-cho, Kokubu-shi, Kagoshima Inside the Kyocera Research Institute (72) Inventor Ken-ichi Nagae 1-4-4 Yamashita-cho, Kokubu-shi, Kagoshima Kyocera Research Institute

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】アルカリ珪酸ガラスを20〜80体積%
と、40〜400℃における熱膨張係数が6ppm/℃
以上の金属酸化物を含むフィラーを80〜20体積%の
割合で含有して成る絶縁基体の成形体と、該成形体に被
着形成した低抵抗配線導体から成る配線パターンを、非
酸化性雰囲気下、850〜1080℃の温度で同時焼成
して一体化した配線基板であって、前記絶縁基体表面に
被着形成した低抵抗配線導体から成る入出力用の接続パ
ッド部の周縁部が、該周縁から10〜100μmの幅で
前記絶縁基体から滲出したガラス成分から成る被覆層で
覆われ、かつ該被覆層の最頂部と露出した接続パッド部
表面との高低差が5μm以内であることを特徴とする配
線基板。
1. An alkali silicate glass of 20 to 80% by volume.
And the thermal expansion coefficient at 40 to 400 ° C. is 6 ppm / ° C.
A molded body of an insulating substrate containing the filler containing the metal oxide at a ratio of 80 to 20% by volume and a wiring pattern formed of a low-resistance wiring conductor formed on the molded body are formed in a non-oxidizing atmosphere. A wiring board integrated by firing simultaneously at a temperature of 850 to 1080 ° C., wherein a peripheral portion of an input / output connection pad portion made of a low-resistance wiring conductor adhered and formed on the surface of the insulating base is It is covered with a coating layer made of a glass component leached from the insulating base with a width of 10 to 100 μm from the peripheral edge, and a height difference between the top of the coating layer and the exposed surface of the connection pad portion is within 5 μm. Wiring board.
JP20603297A 1997-07-31 1997-07-31 Wiring board Expired - Fee Related JP3426920B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20603297A JP3426920B2 (en) 1997-07-31 1997-07-31 Wiring board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20603297A JP3426920B2 (en) 1997-07-31 1997-07-31 Wiring board

Publications (2)

Publication Number Publication Date
JPH1154660A true JPH1154660A (en) 1999-02-26
JP3426920B2 JP3426920B2 (en) 2003-07-14

Family

ID=16516774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20603297A Expired - Fee Related JP3426920B2 (en) 1997-07-31 1997-07-31 Wiring board

Country Status (1)

Country Link
JP (1) JP3426920B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007912A (en) * 2001-06-26 2003-01-10 Kyocera Corp Wiring board
JP2014232767A (en) * 2013-05-28 2014-12-11 京セラ株式会社 Wiring board

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007912A (en) * 2001-06-26 2003-01-10 Kyocera Corp Wiring board
JP4557461B2 (en) * 2001-06-26 2010-10-06 京セラ株式会社 Wiring board
JP2014232767A (en) * 2013-05-28 2014-12-11 京セラ株式会社 Wiring board

Also Published As

Publication number Publication date
JP3426920B2 (en) 2003-07-14

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