JPH02232896A - ガリウム砒素半導体記憶装置 - Google Patents

ガリウム砒素半導体記憶装置

Info

Publication number
JPH02232896A
JPH02232896A JP1051898A JP5189889A JPH02232896A JP H02232896 A JPH02232896 A JP H02232896A JP 1051898 A JP1051898 A JP 1051898A JP 5189889 A JP5189889 A JP 5189889A JP H02232896 A JPH02232896 A JP H02232896A
Authority
JP
Japan
Prior art keywords
node
memory cell
potential
normally
gallium arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1051898A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0459717B2 (OSRAM
Inventor
Hiroyuki Makino
博之 牧野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP1051898A priority Critical patent/JPH02232896A/ja
Publication of JPH02232896A publication Critical patent/JPH02232896A/ja
Publication of JPH0459717B2 publication Critical patent/JPH0459717B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Junction Field-Effect Transistors (AREA)
JP1051898A 1989-03-06 1989-03-06 ガリウム砒素半導体記憶装置 Granted JPH02232896A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1051898A JPH02232896A (ja) 1989-03-06 1989-03-06 ガリウム砒素半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1051898A JPH02232896A (ja) 1989-03-06 1989-03-06 ガリウム砒素半導体記憶装置

Publications (2)

Publication Number Publication Date
JPH02232896A true JPH02232896A (ja) 1990-09-14
JPH0459717B2 JPH0459717B2 (OSRAM) 1992-09-24

Family

ID=12899697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1051898A Granted JPH02232896A (ja) 1989-03-06 1989-03-06 ガリウム砒素半導体記憶装置

Country Status (1)

Country Link
JP (1) JPH02232896A (OSRAM)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58155752A (ja) * 1982-03-12 1983-09-16 Hitachi Ltd 半導体記憶装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58155752A (ja) * 1982-03-12 1983-09-16 Hitachi Ltd 半導体記憶装置

Also Published As

Publication number Publication date
JPH0459717B2 (OSRAM) 1992-09-24

Similar Documents

Publication Publication Date Title
US4782467A (en) Radiation hard gated feedback memory cell
US4879690A (en) Static random access memory with reduced soft error rate
US4532609A (en) Semiconductor memory device
JP3288189B2 (ja) スタティックランダムアクセスメモリ
EP0348326B1 (en) Static MESFET random access memory cell
JPS58148449A (ja) 半導体記憶装置
JPH02232896A (ja) ガリウム砒素半導体記憶装置
US4996447A (en) Field-effect transistor load circuit
JP2823294B2 (ja) ガリウム砒素半導体記憶装置
EP0136106B1 (en) Static random-access memory device
JPH03228292A (ja) ガリウム砒素半導体記憶装置
JP3263876B2 (ja) 半導体記憶装置
JPH0728009B2 (ja) ガリウム砒素半導体メモリ集積回路
JPH01253957A (ja) ガリウム砒素半導体メモリ集積回路
JP2515021B2 (ja) ガリウム砒素半導体集積回路
JP3224306B2 (ja) 半導体メモリ装置
JP2515020B2 (ja) ガリウム砒素半導体集積回路
JPH0461095A (ja) 半導体記憶装置
JPS628396A (ja) 情報保持回路
JPS63285795A (ja) 半導体メモリ装置
Law et al. GaAs Schmitt trigger memory cell design
JPH0459719B2 (OSRAM)
JPH0325946B2 (OSRAM)
JPH01229496A (ja) ガリウム砒素集積回路
JPH065714B2 (ja) 半導体メモリセル

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term