JPH0223103U - - Google Patents

Description

[Brief explanation of drawings]

Figure 1a shows a GaAs film according to an embodiment of this invention.
A front view showing the circuit configuration of a line switching type 180 degree phase shifter formed on a substrate, FIG. 1b is a side view of FIG. 1a, and FIG. 3A is a front view showing the circuit configuration of the converter between the microstrip line and the coplanar strip line, FIG. 3B is a side view of FIG. 3A, and FIG.
Figure c is a diagram showing the state of high frequency signals propagating through the microstrip line, Figure 3 d is a diagram showing the state of high frequency signals in the microstrip line and coplanar strip line conversion section, Figure 3 Fig. 4 is a connection diagram showing the configuration of a line switching type phase shifter when an FET is used as a switching element, and Fig. 5 a is a diagram showing the state of a high frequency signal propagating on a coplanar strip line. A front view showing the circuit configuration of a conventional line switching type phase shifter formed on a GaAs substrate, FIG. 5b is a side view of FIG. 5a, and FIG. It is a detailed view. In the figure, 1 is a GaAs substrate, 2 is a grounding metal, 3 is an input microstrip line pattern, 4 is an output microstrip line pattern, 5 is a first FET, 6 is a second FET, 7 is a third FET, 8 is a fourth FET, 9 is a first coplanar strip line pattern, 10 is a second coplanar strip line pattern, 11 is a via hole, 12 is a dielectric, 13 is a microstrip line pattern, 14 is a main line pattern for a coplanar strip line, 15 is a ground pattern for a coplanar strip line, 16 is an input terminal,
17 is an output terminal, 18 is a reference line, 19 is a delay line, 20 is a microstrip line pattern for a reference line, 21 is a microstrip line pattern for a delay line, 22 is a drain electrode of the first FET, 23 is the source electrode of the first FET, and 24 is the first FET.
25 is the drain electrode of the second FET, 26 is the source electrode of the second FET,
27 is the gate electrode of the second FET. In addition,
The same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

[Scope of utility model registration request] A first coplanar comprising a GaAs substrate, a ground metal bonded to the back surface of the GaAs substrate, and both ends of a ground pattern formed on the GaAs substrate connected to the ground metal by means such as via holes. strip line pattern,
A second coplanar strip having the same length as the first coplanar strip line pattern, having both ends of the ground pattern covered with the ground metal by means such as via holes, and having opposing patterns crossover. a first field effect transistor having a drain electrode connected to one end of the first coplanar strip line pattern; and a source electrode connected to the source electrode of the first field effect transistor. a second field effect transistor having a drain electrode connected to one end of the second coplanar strip line pattern; and a second field effect transistor having a drain electrode connected to the other end of the first coplanar strip line pattern. a fourth field effect transistor whose source electrode is connected to the source electrode of the third field effect transistor and whose drain electrode is connected to the other end of the second coplanar strip line pattern. a field effect transistor, an input (or output) microstrip line pattern connected to the source electrode of the first field effect transistor and the source electrode of the second field effect transistor, and the third field effect transistor. A line switching type 180 degree shift characterized by comprising an output (or input) microstrip line pattern connected to the source electrode of the field effect transistor and the source electrode of the fourth field effect transistor. Partner.