JPH02223222A - Output circuit - Google Patents

Output circuit

Info

Publication number
JPH02223222A
JPH02223222A JP63289434A JP28943488A JPH02223222A JP H02223222 A JPH02223222 A JP H02223222A JP 63289434 A JP63289434 A JP 63289434A JP 28943488 A JP28943488 A JP 28943488A JP H02223222 A JPH02223222 A JP H02223222A
Authority
JP
Japan
Prior art keywords
output
circuit
gate
input
type transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63289434A
Other languages
Japanese (ja)
Other versions
JP2697024B2 (en
Inventor
Kazuhisa Ninomiya
二宮 和久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP63289434A priority Critical patent/JP2697024B2/en
Publication of JPH02223222A publication Critical patent/JPH02223222A/en
Application granted granted Critical
Publication of JP2697024B2 publication Critical patent/JP2697024B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To suppress the temporal change of a current, to reduce the fluctuation of the ground potential, and to prevent the malfunction of the inside of an IC by attaching a transfer gate and a gate signal control circuit to control the conductance of the transfer gate on an output circuit. CONSTITUTION:A P-type transistor M1 connected between an output terminal Oi and a power source potential terminal, a first N-type transistor M2 connected between the output terminal Oi and a reference potential terminal, first and second inverter circuits INV1 and INV2 which set a data input signal, the inverse of DATAi as input, and a two-input NAND circuit NA and a two-input NOR circuit NO which set the output signals A and B and output control signals OC and the inverse of OC of the inverters as input are provided. And the transfer gate M3 inserted between the output terminal of the NOR circuit NO and the gate of the first N-type transistor M2 and a gate control circuit INV3 which controls the magnitude of the conductance of the transfer gate M3 in an opposite direction corresponding to the level of the potential of the output terminal are attached. Thereby, the gate input signal of the N-type transistor M2 for output driving is controlled, and the temporal change of the current can be suppressed to a low level.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は出力回路に関し、特に半導体メモリやマイクロ
コンピュータに内蔵されるCMO3出力回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an output circuit, and particularly to a CMO3 output circuit built into a semiconductor memory or a microcomputer.

〔従来の技術〕[Conventional technology]

従来、この種の出力回路は、第3−図に示すような回路
構成を取るものが一般的である。ここでINVI、2は
インバータ回路、Noは2入力NOR回路、NAは2入
力NAND回路1M1は出力駆動用P型トランジスタ、
M2は出力駆動用N型トランジスタである。またDAT
Aiはデータ入力端子、olは出力端子であり、この2
つは並相となる。但し、iはビット構成数を示す。さら
にQC,QCは互いに逆相の第1、第2の出力制御信号
端子であり、出力状態の制御を行なう。
Conventionally, this type of output circuit generally has a circuit configuration as shown in FIG. Here, INVI, 2 is an inverter circuit, No is a 2-input NOR circuit, NA is a 2-input NAND circuit, 1M1 is a P-type transistor for output drive,
M2 is an N-type transistor for output driving. Also DAT
Ai is a data input terminal, ol is an output terminal, and these two
One is parallel. However, i indicates the number of bit configurations. Further, QC and QC are first and second output control signal terminals having opposite phases to each other, and control the output state.

例えばOC=“H゛、■=Lを入力すると、01に出力
信号が現われ、逆に○C=“L IIoc= ”“H“
を入力すると、Oiはハイ・インピーダンス状態になる
For example, when inputting OC="H", ■=L, an output signal appears at 01, and conversely, ○C="L IIoc="H"
When input, Oi becomes high impedance state.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の出力回路では、出力駆動用N型トランジ
スタが急速にオン状態になると、出力負荷容量を放電す
る電流変化とGND配線のインダクタンスにより、GN
D電位が揺れ、その結果、IC内部の誤動作を生ずると
いう欠点を有する。
In the conventional output circuit described above, when the output driving N-type transistor is rapidly turned on, the GN is
This has the disadvantage that the D potential fluctuates, resulting in malfunction inside the IC.

本発明の目的は出力駆動用N型トランジスタのゲート入
力信号を制御し、電流の時間的変化を小さく抑えること
ができる出力回路を提供することにある。
An object of the present invention is to provide an output circuit that can control the gate input signal of an output driving N-type transistor and suppress temporal changes in current.

1〔課題を解決するための手段〕 本発明の出力回路は、出力端子と電源電位端間に接続さ
れるP型トランジスタと、前記出力端子と基準電位端間
に接続される第1のN型トランジスタと、データ入力信
号を入力とする第1のインバータ回路と、前記第1のイ
ンバータ回路の出力信号及び第1の出力制御信号を入力
としその出力を前記P型トランジスタのゲートに供給す
る2入力NAND回路と、前記データ入力信号を入力と
する第2のインバータ回路と8、前記第2のインバータ
回路の出力と前記第1の出力制御信号と逆相の第2の出
力制御信号を入力とする2入力NOR回路と、前記NO
R回路の出力端と前記第1のN型トランジスタのゲート
間に挿入した伝達ゲートと、前記出力端子の電位の高低
に応じて前記伝達ゲートのコンダクタンスの大きさを逆
方向に制御するゲート制御回路とを含むというものであ
る。
1 [Means for Solving the Problems] The output circuit of the present invention includes a P-type transistor connected between an output terminal and a power supply potential terminal, and a first N-type transistor connected between the output terminal and a reference potential terminal. a transistor, a first inverter circuit that receives a data input signal as input, and two inputs that receive an output signal of the first inverter circuit and a first output control signal and supply the output to the gate of the P-type transistor. a NAND circuit, a second inverter circuit 8 which receives the data input signal as input, and receives an output of the second inverter circuit and a second output control signal having an opposite phase to the first output control signal; 2-input NOR circuit and the NOR circuit
A transmission gate inserted between the output end of the R circuit and the gate of the first N-type transistor, and a gate control circuit that controls the conductance of the transmission gate in opposite directions depending on the level of the potential of the output terminal. This includes the following.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の第1の実施例の回路図である。FIG. 1 is a circuit diagram of a first embodiment of the present invention.

DATAiはデータ入力端子、Olは出力端子であり、
それぞれ逆相となる。M、、M2はそれぞれ、出力駆動
用P型、N型トランジスタでありそのゲート入力信号を
C,Eとする0M3はデイプレッション型トランジスタ
(伝達ゲート)でありそのドレイン・ソースをそれぞれ
り、Eとし、ゲート入力信号をFとする。INVI、2
はインバータ回路、INV3はゲート制御回路としての
インバータ回路、NAは2入力NAND回路、NOは2
入力NOR回路であり、INVIの入力信号はDATA
iであり、出力信号をAとする。
DATAi is a data input terminal, Ol is an output terminal,
Each has an opposite phase. M, , and M2 are P-type and N-type transistors for output driving, respectively, and their gate input signals are C and E.M3 is a depletion type transistor (transmission gate), and its drain and source are respectively designated as E. , the gate input signal is F. INVI, 2
is an inverter circuit, INV3 is an inverter circuit as a gate control circuit, NA is a 2-input NAND circuit, and NO is a 2-input NAND circuit.
It is an input NOR circuit, and the input signal of INVI is DATA.
i, and the output signal is A.

I NV2の入力はDATAiであり出力信号をBとす
る。NAの入力信号は第1の出力制御信号OCとA、出
力信号はC,NOの入力信号は第2の出力制御信号OC
とB、出力信号はDに接続。
The input of INV2 is DATAi, and the output signal is B. The input signal of NA is the first output control signal OC and A, the output signal is C, and the input signal of NO is the second output control signal OC.
and B, the output signal is connected to D.

INV3の入力は出力信号oi、出力は、nチャネルデ
イプレッション型MoSトランジスタM3のゲートFに
接続している。
The input of INV3 is the output signal oi, and the output is connected to the gate F of the n-channel depletion type MoS transistor M3.

第4図に、動作タイミングを示す。FIG. 4 shows the operation timing.

第4図(b)に示すように、DATAiが“L“→ll
 HI+に変化する場合、゛最初出力Oiは“81ルベ
ルであるから、Fは“L I+レベルとなり、EはF−
(M3のしきい電圧)まで上昇し、M2がオンしはじめ
Olは減少しはじめる。この領域ではM2のgmは小さ
く、電流変化を抑制できる。
As shown in FIG. 4(b), DATAi is “L”→ll
When changing to HI+, ``Since the initial output Oi is ``81 lvl, F becomes ``LI+ level,'' and E becomes F-.
(Threshold voltage of M3), M2 starts to turn on, and Ol starts to decrease. In this region, gm of M2 is small and current changes can be suppressed.

Ofがさらに減少すると、INV3がOlの減少を検知
し、Fに“H”レベルの信号を出す。これによってEも
フルスイングして“H”レベルとなり、M2はgm大の
領域で動作し、Oiの減少を加速する。以上のようにす
ることにより、M2の急激なスイッチング(オフ→オン
)を抑制しM2はオンしてしばらくは、低利得領域(g
m小)で動作し、その後出力レベルのフィードバックを
うけて高利得領域へと移行し、急激な電流の変化を抑制
することが可能である。
When Of further decreases, INV3 detects the decrease in Ol and outputs an "H" level signal to F. As a result, E also fully swings to the "H" level, and M2 operates in the gm-large region, accelerating the decrease in Oi. By doing the above, the sudden switching (off → on) of M2 is suppressed, and M2 remains on for a while in the low gain region (g
It is possible to operate at low gain (m small) and then shift to a high gain region upon feedback of the output level, thereby suppressing sudden changes in current.

第2図は本発明の第2の実施例の回路図である。FIG. 2 is a circuit diagram of a second embodiment of the invention.

この実施例は、電源電位端にソースを接続しゲートに第
2の出力制御信号oCを印加したP型トランジスタM、
と、M5のドレインに接続したソースと出力信号端子O
fに接続したゲートを有するP型トランジスタM4と、
M4のドレインとGND端間に挿入した抵抗Rとゲート
制御回路を構成している。OCが“HT1のとき、この
ゲート制御回路は確実にオフとなり、第1の実施例より
消費電力が少なくできる利点がある。
In this embodiment, a P-type transistor M whose source is connected to a power supply potential terminal and whose gate is applied with a second output control signal oC,
and the source connected to the drain of M5 and the output signal terminal O
a P-type transistor M4 having a gate connected to f;
The resistor R inserted between the drain of M4 and the GND terminal constitutes a gate control circuit. When OC is "HT1," this gate control circuit is reliably turned off, which has the advantage of lower power consumption than in the first embodiment.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、出力回路に伝達ゲートと
そのコンダクタンスを制御するゲート信号制御回路とを
付加することにより、電流の時間的変化を抑制し、GN
D電位の揺れを小さくし、IC内部の誤動作を防止する
効果を有する。
As explained above, the present invention suppresses temporal changes in current by adding a transmission gate and a gate signal control circuit that controls its conductance to the output circuit.
This has the effect of reducing fluctuations in the D potential and preventing malfunctions inside the IC.

ョン型トランジスタ(伝達ゲート) 、M4 0M5・
・・P型トランジスタ、R・・・抵抗、INV1〜3・
・・インバータ回路、NA・・・2入力NAND回路、
NO・・・2入力NOR回路。
Transmission type transistor (transmission gate), M4 0M5・
・P-type transistor, R...resistance, INV1~3・
...Inverter circuit, NA...2-input NAND circuit,
NO...2 input NOR circuit.

Claims (1)

【特許請求の範囲】[Claims] 出力端子と電源電位端間に接続されるP型トランジスタ
と、前記出力端子と基準電位端間に接続される第1のN
型トランジスタと、データ入力信号を入力とする第1の
インバータ回路と、前記第1のインバータ回路の出力信
号及び第1の出力制御信号を入力としその出力を前記P
型トランジスタのゲートに供給する2入力NAND回路
と、前記データ入力信号を入力とする第2のインバータ
回路と、前記第2のインバータ回路の出力と前記第1の
出力制御信号と逆相の第2の出力制御信号を入力とする
2入力NOR回路と、前記NOR回路の出力端と前記第
1のN型トランジスタのゲート間に挿入した伝達ゲート
と、前記出力端子の電位の高低に応じて前記伝達ゲート
のコンダクタンスの大きさを逆方向に制御するゲート制
御回路とを含むことを特徴とする出力回路。
a P-type transistor connected between the output terminal and the power supply potential terminal; and a first N transistor connected between the output terminal and the reference potential terminal.
a first inverter circuit which receives a data input signal as an input, and a first inverter circuit which receives an output signal and a first output control signal of the first inverter circuit and whose output is connected to the P.
a two-input NAND circuit that supplies the data input signal to the gate of the type transistor; a second inverter circuit that receives the data input signal as input; a two-input NOR circuit that receives an output control signal as input; a transmission gate inserted between the output terminal of the NOR circuit and the gate of the first N-type transistor; and a gate control circuit that controls the magnitude of conductance of the gate in the opposite direction.
JP63289434A 1988-11-15 1988-11-15 Output circuit Expired - Lifetime JP2697024B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63289434A JP2697024B2 (en) 1988-11-15 1988-11-15 Output circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63289434A JP2697024B2 (en) 1988-11-15 1988-11-15 Output circuit

Publications (2)

Publication Number Publication Date
JPH02223222A true JPH02223222A (en) 1990-09-05
JP2697024B2 JP2697024B2 (en) 1998-01-14

Family

ID=17743199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63289434A Expired - Lifetime JP2697024B2 (en) 1988-11-15 1988-11-15 Output circuit

Country Status (1)

Country Link
JP (1) JP2697024B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0625273A1 (en) * 1992-11-05 1994-11-23 Xilinx, Inc. Load programmable output buffer

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6337645A (en) * 1986-07-31 1988-02-18 Nec Corp Semiconductor circuit
JPH0212867A (en) * 1988-06-29 1990-01-17 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6337645A (en) * 1986-07-31 1988-02-18 Nec Corp Semiconductor circuit
JPH0212867A (en) * 1988-06-29 1990-01-17 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0625273A1 (en) * 1992-11-05 1994-11-23 Xilinx, Inc. Load programmable output buffer
EP0625273A4 (en) * 1992-11-05 1997-04-16 Xilinx Inc Load programmable output buffer.

Also Published As

Publication number Publication date
JP2697024B2 (en) 1998-01-14

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