JPH0221175B2 - - Google Patents
Info
- Publication number
- JPH0221175B2 JPH0221175B2 JP56061994A JP6199481A JPH0221175B2 JP H0221175 B2 JPH0221175 B2 JP H0221175B2 JP 56061994 A JP56061994 A JP 56061994A JP 6199481 A JP6199481 A JP 6199481A JP H0221175 B2 JPH0221175 B2 JP H0221175B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- mos
- gate
- inverter
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 20
- 239000003990 capacitor Substances 0.000 claims description 18
- 230000000295 complement effect Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56061994A JPS57176841A (en) | 1981-04-24 | 1981-04-24 | Integrated structure of high tension complementary mos inverter array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56061994A JPS57176841A (en) | 1981-04-24 | 1981-04-24 | Integrated structure of high tension complementary mos inverter array |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57176841A JPS57176841A (en) | 1982-10-30 |
JPH0221175B2 true JPH0221175B2 (enrdf_load_html_response) | 1990-05-14 |
Family
ID=13187258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56061994A Granted JPS57176841A (en) | 1981-04-24 | 1981-04-24 | Integrated structure of high tension complementary mos inverter array |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57176841A (enrdf_load_html_response) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5108389B2 (ja) * | 2006-06-05 | 2012-12-26 | 三星電子株式会社 | レベルシフト回路およびこれを搭載した表示装置 |
-
1981
- 1981-04-24 JP JP56061994A patent/JPS57176841A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57176841A (en) | 1982-10-30 |
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