JPH02196466A - Semiconductor integrated circuit device - Google Patents

Abstract

PURPOSE:To prevent disconnection of wiring which is formed on stepped parts of a semiconductor substrate by metallic vapor deposition even through there are steps on the above substrate by providing multilateral stepped parts which protrude after intersecting at right angles to the wiring's extending direction from side faces of the steps that are formed below wiring or become hollow at inner sides and further, taking likewise other measures. CONSTITUTION:In a semiconductor integrated circuit device having a wiring 2 which is formed intersecting at right angles steps 6a and 6b extending in one direction on a semiconductor substrate 1, multilateral stepped parts 7a and 7b which protrude intersecting at right angles to the extending direction of the wiring 2 from side faces of the steps 6a and 6b that are formed below the above wiring 2 or become hollow on inner sides are formed; besides, the stepped parts 7a and 7b are formed so that each of them may have three sides or more which intersect at right angles or are parallel to the extending direction of the wiring 2. For example, rectangular stepped parts 7a and 7b are provided so that they become hollower than the steps 6a and 6b of conductive layers 3. Even thorough, for example, vapor deposition is performed from the upper side of the substrate 1 in the slanting direction of the arrow 9, thick metallic layers are vapor-deposited in the sides of the stepped parts 7a and 7b which are not shaded with respect to the vapor deposition direction and connecting parts 10 are formed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit device, and more particularly to a semiconductor integrated circuit device in which wiring is formed on an uneven semiconductor substrate.

[Conventional technology]

Conventionally, this type of semiconductor integrated circuit device has a structure in which glabella insulating films and wiring are stacked on a semiconductor substrate in multiple layers due to multilayer wiring.

FIGS. 2(a) and 2(b) are a partial plan view and an AA cross-sectional view of a semiconductor substrate showing an example of the conventional method. This semiconductor integrated circuit device is manufactured by depositing a conductive layer 3 on a conductive layer 3 formed in one direction across a gate layer 5 on a semiconductor substrate 1 by a metal vapor deposition method from the direction of an arrow 4. Wiring 3a that crosses 3
is formed.

[Problem to be solved by the invention]

In the structure of the conventional semiconductor integrated circuit device described above, since the wiring is formed by a metal vapor deposition method, there is directivity in the direction of vapor deposition. Therefore, as shown in FIG. 2(b), the step 6
A is completely metal-deposited, and the wiring 2 and the conductive layer 3 are connected. However, the step 6b is in the shadow with respect to the deposition direction, so the step 6b is not deposited and the conductive layer 3 and the conductive layer 2 are connected. There is a problem that the wire will be disconnected.

That is, on the semiconductor substrate of a semiconductor integrated circuit device, a plurality of wiring patterns as shown in FIG.
There is a problem that a break in the wiring occurs in one of the wiring patterns.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor integrated circuit device in which wiring formed by metal vapor deposition on a semiconductor substrate does not become disconnected even if there is a step on the semiconductor substrate.

[Means to solve the problem]

In the semiconductor integrated circuit device of the present invention, in a semiconductor integrated circuit device having a wiring formed perpendicularly across a step extending in one direction on a semiconductor substrate, the semiconductor integrated circuit device has a wiring formed on a semiconductor substrate at right angles across a step extending in one direction. A long-sided stepped portion that protrudes perpendicularly to the direction in which the wiring extends or is recessed inward is provided, and the stepped portion has at least three sides that are perpendicular or parallel to the direction in which the wiring extends. It is configured with this in mind.

〔Example〕 Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a partial plan view of a semiconductor substrate showing one embodiment of the present invention. As shown in the figure, this semiconductor integrated circuit device is provided with rectangular step portions 7a and 7b that are recessed toward the conductive layer 3 from the steps 6a and 6b of the conductive layer 3. Other than that, it is the same as the conventional example.

The bottom surfaces of the stepped portions 7a and 7b are flush with the surface of the semiconductor substrate 1. Further, each side of the step portions 7a and 7b has two sides parallel to the direction in which the wiring 2 extends and one side perpendicular to the direction in which the wiring 2 extends, for a total of three sides.

By providing such step portions 7a and 7b, for example, even if the step portions 6a and 6b are vapor-deposited from above the semiconductor substrate direction 1 in the diagonal direction of the arrow 9, there will be no shadow in this vapor deposition direction. A thick metal layer is deposited on the sides of the stepped portions 7a and 7b where the connecting portion 10 is formed. In addition, the shadowed sides are not vapor deposited and become cut portions 119.Furthermore, even if the vapor deposition direction is variously changed, the step portions 7a and 7b have no evaporation.
Since there is a side that is not shaded in the vapor deposition direction, metal is deposited on this side, and the wiring 2 and the conductive layer 3 are reliably connected.

Here, in this embodiment, two step portions 7a and 7b are provided on each conductive layer 3, but it is also possible to provide only one step portion, for example,
In the case of a power supply line, it is better to provide a plurality of step portions, but in the case of a signal line, one step may be provided. Further, the stepped portion may be provided in the shape of the protruding portion 8a so as to protrude from the stepped portion 6a.

〔Effect of the invention〕

As described above, the semiconductor integrated circuit device of the present invention is provided with a step portion having a long side that protrudes perpendicularly to the direction in which the wire extends or is recessed inward from the side surface of the step where the wire crosses the step. By shaping the stepped portion to have at least three sides that are perpendicular or parallel to the direction in which the wiring extends, it has sides that are not shadowed in the direction of vapor deposition. Therefore, metal is deposited on either side of the stepped portion, and there is an effect that a reliable connection can be achieved.

[Brief explanation of the drawing]

FIG. 1 is a partial plan view of a semiconductor substrate showing an embodiment of the present invention, and FIGS. 2(a) and 2(b) are a partial plan view and an AA sectional view of a semiconductor substrate showing an example of the conventional art. DESCRIPTION OF SYMBOLS 1... Semiconductor substrate, 2... Wiring, 3... Conductive layer,
4.9...Arrow, 5...Gate layer, 6a, 6b...
・Steps, 7a, 7b...Steps, 8a, 8b...
Projecting portion, 10... Connection portion, 11... Cutting portion.

Claims (1)

[Claims] In a semiconductor integrated circuit device having a wiring formed perpendicularly across a step extending in one direction on a semiconductor substrate, a line extending from a side surface of the step formed below the wiring at right angles to the direction in which the wiring extends. A semiconductor integrated circuit device characterized in that a step portion having a long side that protrudes or is recessed inward is provided, and the step portion has at least three sides orthogonal to or parallel to the direction in which the wiring extends. .