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National Institute of Advanced Industrial Science and Technology AIST
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Agency of Industrial Science and Technology
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Application filed by Agency of Industrial Science and TechnologyfiledCriticalAgency of Industrial Science and Technology
Priority to JP58166539ApriorityCriticalpatent/JPS6058619A/ja
Publication of JPS6058619ApublicationCriticalpatent/JPS6058619A/ja
Publication of JPH0219620B2publicationCriticalpatent/JPH0219620B2/ja
Verfahren zum herstellen von planaren halbleiteranordnungen fuer monolithisch integrierte schaltungen mit halbleiterteilbereichen die mittels dielektrischen materials gegeneinander sowie gegen die restlichen bereiche des halbleiterkoerpers elektrisch isoliert sind