JPH0219187B2 - - Google Patents
Info
- Publication number
- JPH0219187B2 JPH0219187B2 JP7119684A JP7119684A JPH0219187B2 JP H0219187 B2 JPH0219187 B2 JP H0219187B2 JP 7119684 A JP7119684 A JP 7119684A JP 7119684 A JP7119684 A JP 7119684A JP H0219187 B2 JPH0219187 B2 JP H0219187B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vapor
- thermocouple
- crucible
- sheath
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
- 
        - C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
 
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP7119684A JPS60215759A (ja) | 1984-04-09 | 1984-04-09 | 薄膜形成装置 | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP7119684A JPS60215759A (ja) | 1984-04-09 | 1984-04-09 | 薄膜形成装置 | 
Publications (2)
| Publication Number | Publication Date | 
|---|---|
| JPS60215759A JPS60215759A (ja) | 1985-10-29 | 
| JPH0219187B2 true JPH0219187B2 (cs) | 1990-04-27 | 
Family
ID=13453670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP7119684A Granted JPS60215759A (ja) | 1984-04-09 | 1984-04-09 | 薄膜形成装置 | 
Country Status (1)
| Country | Link | 
|---|---|
| JP (1) | JPS60215759A (cs) | 
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPH0453285U (cs) * | 1990-09-11 | 1992-05-07 | ||
| JPH0557008U (ja) * | 1991-12-27 | 1993-07-30 | 日本道路興業株式会社 | 漢字とローマ字との併用標示による道路標識 | 
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPH0165855U (cs) * | 1987-10-20 | 1989-04-27 | ||
| US4982696A (en) * | 1988-01-08 | 1991-01-08 | Ricoh Company, Ltd. | Apparatus for forming thin film | 
| US8261690B2 (en) * | 2006-07-14 | 2012-09-11 | Georgia Tech Research Corporation | In-situ flux measurement devices, methods, and systems | 
- 
        1984
        - 1984-04-09 JP JP7119684A patent/JPS60215759A/ja active Granted
 
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPH0453285U (cs) * | 1990-09-11 | 1992-05-07 | ||
| JPH0557008U (ja) * | 1991-12-27 | 1993-07-30 | 日本道路興業株式会社 | 漢字とローマ字との併用標示による道路標識 | 
Also Published As
| Publication number | Publication date | 
|---|---|
| JPS60215759A (ja) | 1985-10-29 | 
Similar Documents
| Publication | Publication Date | Title | 
|---|---|---|
| US2489436A (en) | Method and apparatus for producing neutrons | |
| EP0269446A3 (en) | System and method for vacuum deposition of thin films | |
| US3660158A (en) | Thin film nickel temperature sensor and method of forming | |
| US3494852A (en) | Collimated duoplasmatron-powered deposition apparatus | |
| JPH0219187B2 (cs) | ||
| JPH0153351B2 (cs) | ||
| JPH051895Y2 (cs) | ||
| JPS58161774A (ja) | スパツタリング処理方法 | |
| JPH0676749A (ja) | イオン源 | |
| JPS5668932A (en) | Manufacture of magnetic recording medium | |
| JP2549398B2 (ja) | 二酸化硅素薄膜の成膜方法 | |
| JPS589981A (ja) | 真空蒸着装置 | |
| JPH0238925Y2 (cs) | ||
| JPS602745B2 (ja) | イオン源装置 | |
| Zolotukhin | Measurement of mass-to-charge beam plasma ion composition during electron beam evaporation of refractory materials in the forevacuum pressure range | |
| JPS5811009Y2 (ja) | イオン源装置 | |
| JPS60226119A (ja) | 薄膜形成装置 | |
| JPH04221066A (ja) | 薄膜蒸着装置 | |
| SU1086969A1 (ru) | Устройство дл облучени радиоактивными ионами | |
| JPS63216251A (ja) | ガスフエ−ズイオン源 | |
| JPS5840559Y2 (ja) | イオン加速装置用イオン源 | |
| JPS60167249A (ja) | 固体試料用電界電離イオン源 | |
| JPS589156B2 (ja) | イオン化プレ−テイング装置 | |
| JPH0228226B2 (cs) | ||
| JPH01283366A (ja) | 薄膜形成装置 |