JPH02177330A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPH02177330A JPH02177330A JP27986389A JP27986389A JPH02177330A JP H02177330 A JPH02177330 A JP H02177330A JP 27986389 A JP27986389 A JP 27986389A JP 27986389 A JP27986389 A JP 27986389A JP H02177330 A JPH02177330 A JP H02177330A
- Authority
- JP
- Japan
- Prior art keywords
- film
- groove
- patterns
- semiconductor layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 112
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000000463 material Substances 0.000 claims abstract description 56
- 239000004020 conductor Substances 0.000 claims abstract description 35
- 238000002955 isolation Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 57
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 28
- 238000000926 separation method Methods 0.000 claims description 28
- 229910021332 silicide Inorganic materials 0.000 claims description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 abstract description 41
- 238000007254 oxidation reaction Methods 0.000 abstract description 41
- 239000000758 substrate Substances 0.000 abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 238000005121 nitriding Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 95
- 229910052581 Si3N4 Inorganic materials 0.000 description 36
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 35
- 238000005530 etching Methods 0.000 description 17
- 239000011810 insulating material Substances 0.000 description 17
- 239000012535 impurity Substances 0.000 description 14
- 238000000151 deposition Methods 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000010354 integration Effects 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- -1 boron ion Chemical class 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 241000293849 Cordylanthus Species 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27986389A JPH02177330A (ja) | 1989-10-30 | 1989-10-30 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27986389A JPH02177330A (ja) | 1989-10-30 | 1989-10-30 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56212459A Division JPS58112342A (ja) | 1981-08-21 | 1981-12-25 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02177330A true JPH02177330A (ja) | 1990-07-10 |
| JPH0574220B2 JPH0574220B2 (enrdf_load_stackoverflow) | 1993-10-18 |
Family
ID=17616995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27986389A Granted JPH02177330A (ja) | 1989-10-30 | 1989-10-30 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02177330A (enrdf_load_stackoverflow) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS495283A (enrdf_load_stackoverflow) * | 1972-04-28 | 1974-01-17 | ||
| JPS5531616A (en) * | 1978-08-26 | 1980-03-06 | Iseki & Co Ltd | Caterpillar |
| JPS56137653A (en) * | 1980-03-29 | 1981-10-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor integrated circuit |
-
1989
- 1989-10-30 JP JP27986389A patent/JPH02177330A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS495283A (enrdf_load_stackoverflow) * | 1972-04-28 | 1974-01-17 | ||
| JPS5531616A (en) * | 1978-08-26 | 1980-03-06 | Iseki & Co Ltd | Caterpillar |
| JPS56137653A (en) * | 1980-03-29 | 1981-10-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0574220B2 (enrdf_load_stackoverflow) | 1993-10-18 |
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