JPH02168362A - Semiconductor storage circuit - Google Patents
Semiconductor storage circuitInfo
- Publication number
- JPH02168362A JPH02168362A JP63324191A JP32419188A JPH02168362A JP H02168362 A JPH02168362 A JP H02168362A JP 63324191 A JP63324191 A JP 63324191A JP 32419188 A JP32419188 A JP 32419188A JP H02168362 A JPH02168362 A JP H02168362A
- Authority
- JP
- Japan
- Prior art keywords
- data
- ram
- peripheral
- storage circuit
- size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 230000002093 peripheral effect Effects 0.000 claims abstract description 21
- 239000000872 buffer Substances 0.000 abstract description 23
- 238000010586 diagram Methods 0.000 description 5
- 101100325756 Arabidopsis thaliana BAM5 gene Proteins 0.000 description 2
- 101150046378 RAM1 gene Proteins 0.000 description 2
- 101100476489 Rattus norvegicus Slc20a2 gene Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
Landscapes
- Microcomputers (AREA)
- Dram (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体記憶回路lこ係り、特にバス方式のマイ
クロコンビ為−夕の周辺記憶回路に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor memory circuits, and more particularly to peripheral memory circuits for bus-type microcombination devices.
従来この種の半導体記憶回路は、それぞれの周辺ラッチ
2がバス61こ信号をのせるためのバッファトランジス
タを周辺バッファの出力バッファ12内に有している。Conventionally, this type of semiconductor memory circuit has a buffer transistor in the output buffer 12 of the peripheral buffer for each peripheral latch 2 to carry a signal from the bus 61.
ここで、RAM(ランダム・アクセス・メモリ)lと内
部バス6との間に、バスドライバ3と入力バッフ74と
が介在し、周辺ラッチ2と内部バス6との間にも、入力
バッフ75と出力バッファ12とが介在し、さらにデー
タの読み出し信号7とアドレス信号との2人力のAND
回路出力を入カパッ7ア5Iこ印加し、アドレス信号8
と書き込み信号9との2人力のAND回路の出力を出力
バッファ12に印加している。Here, a bus driver 3 and an input buffer 74 are interposed between the RAM (random access memory) l and the internal bus 6, and an input buffer 75 and an input buffer 74 are interposed between the peripheral latch 2 and the internal bus 6. An output buffer 12 is interposed, and the data read signal 7 and the address signal are manually ANDed.
Apply the circuit output to the input capacitor 7a5I and send the address signal 8
The output of a two-man-operated AND circuit of and the write signal 9 is applied to the output buffer 12.
前述した従来の半導体記憶回路では、各ラッチ2ごとに
出力用のバッフ7トランジスタを出力バッファ12内に
有している。仁の出力バッファ12のトランジスタは、
通常の論理ゲートより大きいため、半導体チップ面積を
大きくするという欠点がある。In the conventional semiconductor memory circuit described above, each latch 2 has an output buffer 7 transistor in the output buffer 12. The transistor of Jin's output buffer 12 is
Since they are larger than normal logic gates, they have the disadvantage of increasing the area of the semiconductor chip.
また、周辺記憶回路の数が増えるに従い、バス6Iこ対
する容量負荷が大き(なる次め、他のバスドライバ3を
含めて、そのサイズを大きくするという欠点がある。Furthermore, as the number of peripheral memory circuits increases, the capacitive load on the bus 6I becomes larger (which in turn increases the size of the bus 6I, including other bus drivers 3).
本発明の目的は、前記欠点を解決し、バスドライバを省
略でき、半導体チップ面積を小さくできるようにし九半
導体記憶回路を提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor memory circuit which solves the above-mentioned drawbacks and allows the bus driver to be omitted and the semiconductor chip area to be reduced.
本発明の半導体記憶回路の構成は、パス方式のマイクロ
コンピュータの周辺記憶回路と、この周辺記憶回路と等
しい内容のデータを共通に保持するランダム・アクセス
・メモリとを備えたことを特徴とする。The structure of the semiconductor memory circuit of the present invention is characterized by comprising a peripheral memory circuit of a pass-type microcomputer and a random access memory that commonly holds data of the same content as the peripheral memory circuit.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の一実施例の半導体記憶回路のブロック
図である。第1図において、本実施例の半導体記憶回路
は、RAM1と、周辺ラッチ2と、内部バス6(!:R
AM1との間のデータの出入を行うためのバスドライバ
3、入力バッファ4と、内部パス6と周辺ラッチ2との
間のデータの出入を行うための入力バッファ5と、読み
出し信号7、アドレス信号802人力の第1のAND回
路と、アドレス信号8、書き込み信号9の2人力の第2
のAND回路とを含み、構成される。ここで、第1のA
ND回路の出力はパスドライバ3に、第2のAND回路
の出力は入力バッファ4.5にそれぞれ印加される。FIG. 1 is a block diagram of a semiconductor memory circuit according to an embodiment of the present invention. In FIG. 1, the semiconductor memory circuit of this embodiment includes a RAM 1, a peripheral latch 2, and an internal bus 6 (!: R
A bus driver 3 for inputting and outputting data to/from AM1, an input buffer 4, an input buffer 5 for inputting and outputting data between the internal path 6 and the peripheral latch 2, a read signal 7, and an address signal. 802 human-powered first AND circuit, and two-human powered second AND circuit of address signal 8 and write signal 9.
and an AND circuit. Here, the first A
The output of the ND circuit is applied to the path driver 3, and the output of the second AND circuit is applied to the input buffer 4.5.
即ち、本実施例の半導体記憶回路は、パス6への信号出
力のためのバスドライバを持たない。That is, the semiconductor memory circuit of this embodiment does not have a bus driver for outputting signals to path 6.
今、周辺ラッチ2にデータを誉くとき、同じアドレスを
持つRAM1にデータを同時に書き込み、データを読み
出す時は、このRAM1からのデータを読み出す。Now, when data is written to the peripheral latch 2, data is simultaneously written to RAM1 having the same address, and when data is read, data is read from RAM1.
本回路を従来の回路(第3図)を比較すると、RAMI
のセル部とアドレスデコード部とが増加し、出力バッフ
ァ12及び書き込み信号のデコード部が減少している。Comparing this circuit with the conventional circuit (Fig. 3), it is found that the RAMI
The number of cell units and address decoding units has been increased, and the number of output buffers 12 and write signal decoding units has been decreased.
このとき、トランジスタの数としては、デコード部分の
数個が増加するが、出力バッファトランジスタのサイズ
がそれより十分大きく、またパスラインに対する容量負
荷も本実施例の回路のほうが、小さくなるため、RAM
Iからの出力バッファ3のサイズも従来の回数とくらべ
て小さくなる。At this time, although the number of transistors increases by several in the decoding section, the size of the output buffer transistor is sufficiently larger than that, and the capacitive load on the pass line is smaller in the circuit of this embodiment.
The size of the output buffer 3 from I is also smaller compared to the conventional number of times.
従って、本実施例の回路は、従来の回路よりチップサイ
ズを縮少できる。Therefore, the circuit of this embodiment can have a smaller chip size than the conventional circuit.
第2図は本発明の他の冥施例の半導体記憶回路のブロッ
ク図である。第2図において、本実施例の回路は、第1
図の周辺部のラッチ2にRAM1と同じデータを書き込
むかどうか゛を選択するセレクタ10が新らたに付加さ
れており、これによりRAM領域を通常RAMと周辺ラ
ッチのデータの保持を使い分けができ、RAM領域が有
効lこ活用できる。FIG. 2 is a block diagram of a semiconductor memory circuit according to another embodiment of the present invention. In FIG. 2, the circuit of this embodiment has the first
A new selector 10 has been added to select whether or not to write the same data as RAM 1 to latch 2 at the periphery of the figure, and this allows the RAM area to be used differently for holding data in normal RAM and peripheral latches. , the RAM area can be used effectively.
以上説明したように、本発明は、周辺部の記憶回路から
パスドライブ用の出力バッファを取り除くことにより、
チップサイズが縮小する効果がある。As explained above, the present invention achieves
This has the effect of reducing chip size.
体記憶回路のブロック図、第3図は従来の半導体記憶回
路のブロック図である。FIG. 3 is a block diagram of a conventional semiconductor memory circuit.
l・・・・・・RAM、2・・・・・・周辺ラッチ、3
・・・・・・RAMのバスドライバ、4・・・・・・R
AMへの入力バッファ、5・・・・・・周辺ラッチの入
力バッファ、6・・・・・・内部バス、7・・・・・・
データの読み出し信号、8・・・・・・アドレスへ号、
9・・・・・・書き込み信号、lO・・・・・・周辺ラ
ッチへの書き込み用セレクタ、11・・・・・・周辺ラ
ッチへの書き込み信号、12・・・・・・周辺バッファ
の出力バッファ。l...RAM, 2...Peripheral latch, 3
...RAM bus driver, 4...R
Input buffer to AM, 5... Input buffer of peripheral latch, 6... Internal bus, 7...
Data read signal, 8... Address number,
9...Write signal, lO...Selector for writing to peripheral latch, 11...Write signal to peripheral latch, 12...Output of peripheral buffer buffer.
代理人 弁理士 内 原 晋
4、図面1単な説明
第1図は本発明の一実施例の半導体記憶回路のブロック
図、第2図は本発明の他の実施例の半導躬1
図Agent: Susumu Uchihara, Patent Attorney 4, Drawing 1 Brief Explanation Fig. 1 is a block diagram of a semiconductor memory circuit according to one embodiment of the present invention, and Fig. 2 is a block diagram of a semiconductor memory circuit according to another embodiment of the present invention.
Claims (1)
の周辺記憶回路と等しい内容データを共通に保持するラ
ンダム・アクセス・メモリとを備えたことを特徴とする
半導体記憶回路。1. A semiconductor memory circuit comprising a peripheral memory circuit of a bus type microcomputer and a random access memory that holds data in common that is the same as that of the peripheral memory circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63324191A JPH02168362A (en) | 1988-12-21 | 1988-12-21 | Semiconductor storage circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63324191A JPH02168362A (en) | 1988-12-21 | 1988-12-21 | Semiconductor storage circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02168362A true JPH02168362A (en) | 1990-06-28 |
Family
ID=18163088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63324191A Pending JPH02168362A (en) | 1988-12-21 | 1988-12-21 | Semiconductor storage circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02168362A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63159966A (en) * | 1986-12-23 | 1988-07-02 | Nec Ic Microcomput Syst Ltd | Single-chip microcomputer |
-
1988
- 1988-12-21 JP JP63324191A patent/JPH02168362A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63159966A (en) * | 1986-12-23 | 1988-07-02 | Nec Ic Microcomput Syst Ltd | Single-chip microcomputer |
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