JPH02155232A - エッチング方法 - Google Patents
エッチング方法Info
- Publication number
- JPH02155232A JPH02155232A JP63308933A JP30893388A JPH02155232A JP H02155232 A JPH02155232 A JP H02155232A JP 63308933 A JP63308933 A JP 63308933A JP 30893388 A JP30893388 A JP 30893388A JP H02155232 A JPH02155232 A JP H02155232A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- hydrochloric acid
- etching solution
- etching
- metal layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63308933A JPH02155232A (ja) | 1988-12-08 | 1988-12-08 | エッチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63308933A JPH02155232A (ja) | 1988-12-08 | 1988-12-08 | エッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02155232A true JPH02155232A (ja) | 1990-06-14 |
| JPH0519301B2 JPH0519301B2 (enExample) | 1993-03-16 |
Family
ID=17987019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63308933A Granted JPH02155232A (ja) | 1988-12-08 | 1988-12-08 | エッチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02155232A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103617952B (zh) * | 2013-11-29 | 2016-08-17 | 中国电子科技集团公司第四十七研究所 | 二极管湿法刻蚀方法 |
-
1988
- 1988-12-08 JP JP63308933A patent/JPH02155232A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6997985B1 (en) | 1993-02-15 | 2006-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor, semiconductor device, and method for fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0519301B2 (enExample) | 1993-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH02209729A (ja) | 半導体装置の製造方法及び異物除去装置 | |
| US3867218A (en) | Method of etching a pattern in a silicon nitride layer | |
| US3909325A (en) | Polycrystalline etch | |
| US3751314A (en) | Silicon semiconductor device processing | |
| US4040893A (en) | Method of selective etching of materials utilizing masks of binary silicate glasses | |
| US3947304A (en) | Etching of group III-V semiconductors | |
| US3882000A (en) | Formation of composite oxides on III-V semiconductors | |
| JPH0519301B2 (enExample) | ||
| JP2001319914A (ja) | 半導体デバイスの製造方法 | |
| JPS6262457B2 (enExample) | ||
| JPS5881973A (ja) | 金−ゲルマニウム合金膜のエツチング方法 | |
| JPS5816074A (ja) | 金または金合金膜のエツチング方法 | |
| JPH06287775A (ja) | Tiのエッチング方法 | |
| JPS5867078A (ja) | 化合物半導体素子製造方法 | |
| JPS5847851B2 (ja) | チタン層を有する半導体素子の製造方法 | |
| US3598669A (en) | Method of rapidly etching silicon nitride in manufacture of semiconductor devices | |
| JPS60128635A (ja) | 素子分離領域の形成方法 | |
| JPH01297822A (ja) | 半導体装置の製造方法 | |
| JPH0897182A (ja) | 半導体装置のpsg膜エッチング方法 | |
| JPH01232744A (ja) | 半導体装置の製造方法 | |
| JPS5929139B2 (ja) | 半導体装置の製造方法 | |
| JPS6046023A (ja) | 半導体装置の製造方法 | |
| JPH04186827A (ja) | 半導体装置の製造方法 | |
| JPS61256719A (ja) | 半導体装置の製造方法 | |
| JPH09232255A (ja) | 化合物半導体素子及びその製造方法 |