JPH02154394A - 半導体メモリ装置 - Google Patents

半導体メモリ装置

Info

Publication number
JPH02154394A
JPH02154394A JP63309241A JP30924188A JPH02154394A JP H02154394 A JPH02154394 A JP H02154394A JP 63309241 A JP63309241 A JP 63309241A JP 30924188 A JP30924188 A JP 30924188A JP H02154394 A JPH02154394 A JP H02154394A
Authority
JP
Japan
Prior art keywords
potential
node
transistor
sense amplifier
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63309241A
Other languages
English (en)
Japanese (ja)
Inventor
Satoru Kishida
悟 岸田
Takashi Matsumoto
尚 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63309241A priority Critical patent/JPH02154394A/ja
Priority to US07/406,672 priority patent/US4989184A/en
Priority to DE3938638A priority patent/DE3938638A1/de
Priority to KR1019890017968A priority patent/KR930009463B1/ko
Publication of JPH02154394A publication Critical patent/JPH02154394A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
JP63309241A 1988-12-06 1988-12-06 半導体メモリ装置 Pending JPH02154394A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP63309241A JPH02154394A (ja) 1988-12-06 1988-12-06 半導体メモリ装置
US07/406,672 US4989184A (en) 1988-12-06 1989-09-13 Semiconductor memory device having current type sense amplifier improved for high speed operation and operating method therefor
DE3938638A DE3938638A1 (de) 1988-12-06 1989-11-21 Halbleiterspeichereinrichtung mit einem verbesserten leseverstaerker vom stromtyp mit hoher betriebsgeschwindigkeit und verfahren zu dessen betreibung
KR1019890017968A KR930009463B1 (ko) 1988-12-06 1989-12-05 반도체 메모리장치와 감지 증폭기

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63309241A JPH02154394A (ja) 1988-12-06 1988-12-06 半導体メモリ装置

Publications (1)

Publication Number Publication Date
JPH02154394A true JPH02154394A (ja) 1990-06-13

Family

ID=17990627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63309241A Pending JPH02154394A (ja) 1988-12-06 1988-12-06 半導体メモリ装置

Country Status (4)

Country Link
US (1) US4989184A (enExample)
JP (1) JPH02154394A (enExample)
KR (1) KR930009463B1 (enExample)
DE (1) DE3938638A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245584A (en) * 1990-12-20 1993-09-14 Vlsi Technology, Inc. Method and apparatus for compensating for bit line delays in semiconductor memories
US5594697A (en) * 1994-06-28 1997-01-14 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US5473562A (en) * 1994-08-05 1995-12-05 Vlsi Technology, Inc. Method and apparatus for minimizing power-up crowbar current in a retargetable SRAM memory system
KR100596763B1 (ko) * 1999-02-03 2006-07-04 주식회사 하이닉스반도체 롬의 고속동작을 위한 센스앰프
US8690065B2 (en) 2007-08-15 2014-04-08 Nxp B.V. Secure storage of a codeword within an integrated circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4459497A (en) * 1982-01-25 1984-07-10 Motorola, Inc. Sense amplifier using different threshold MOS devices
DD242888A1 (de) * 1985-11-21 1987-02-11 Ilmenau Tech Hochschule Schaltungsanordnung zum sicheren bewerten eines stromflusses
JPS62222498A (ja) * 1986-03-10 1987-09-30 Fujitsu Ltd 消去及び書き込み可能な読み出し専用メモリ

Also Published As

Publication number Publication date
KR930009463B1 (ko) 1993-10-04
DE3938638C2 (enExample) 1993-09-16
DE3938638A1 (de) 1990-06-07
KR900010778A (ko) 1990-07-09
US4989184A (en) 1991-01-29

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