KR930009463B1 - 반도체 메모리장치와 감지 증폭기 - Google Patents

반도체 메모리장치와 감지 증폭기 Download PDF

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Publication number
KR930009463B1
KR930009463B1 KR1019890017968A KR890017968A KR930009463B1 KR 930009463 B1 KR930009463 B1 KR 930009463B1 KR 1019890017968 A KR1019890017968 A KR 1019890017968A KR 890017968 A KR890017968 A KR 890017968A KR 930009463 B1 KR930009463 B1 KR 930009463B1
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KR
South Korea
Prior art keywords
potential
node
output
inverter
vcc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019890017968A
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English (en)
Korean (ko)
Other versions
KR900010778A (ko
Inventor
사도루 기시다
히사시 마쓰모도
Original Assignee
미쓰비시 뎅끼 가비시끼가이샤
시기 모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 뎅끼 가비시끼가이샤, 시기 모리야 filed Critical 미쓰비시 뎅끼 가비시끼가이샤
Publication of KR900010778A publication Critical patent/KR900010778A/ko
Application granted granted Critical
Publication of KR930009463B1 publication Critical patent/KR930009463B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
KR1019890017968A 1988-12-06 1989-12-05 반도체 메모리장치와 감지 증폭기 Expired - Fee Related KR930009463B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63309241A JPH02154394A (ja) 1988-12-06 1988-12-06 半導体メモリ装置
JP88-309241 1988-12-06
JP63-309241 1988-12-06

Publications (2)

Publication Number Publication Date
KR900010778A KR900010778A (ko) 1990-07-09
KR930009463B1 true KR930009463B1 (ko) 1993-10-04

Family

ID=17990627

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890017968A Expired - Fee Related KR930009463B1 (ko) 1988-12-06 1989-12-05 반도체 메모리장치와 감지 증폭기

Country Status (4)

Country Link
US (1) US4989184A (enExample)
JP (1) JPH02154394A (enExample)
KR (1) KR930009463B1 (enExample)
DE (1) DE3938638A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5245584A (en) * 1990-12-20 1993-09-14 Vlsi Technology, Inc. Method and apparatus for compensating for bit line delays in semiconductor memories
US5594697A (en) * 1994-06-28 1997-01-14 Matsushita Electric Industrial Co., Ltd. Semiconductor device
US5473562A (en) * 1994-08-05 1995-12-05 Vlsi Technology, Inc. Method and apparatus for minimizing power-up crowbar current in a retargetable SRAM memory system
KR100596763B1 (ko) * 1999-02-03 2006-07-04 주식회사 하이닉스반도체 롬의 고속동작을 위한 센스앰프
US8690065B2 (en) 2007-08-15 2014-04-08 Nxp B.V. Secure storage of a codeword within an integrated circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4459497A (en) * 1982-01-25 1984-07-10 Motorola, Inc. Sense amplifier using different threshold MOS devices
DD242888A1 (de) * 1985-11-21 1987-02-11 Ilmenau Tech Hochschule Schaltungsanordnung zum sicheren bewerten eines stromflusses
JPS62222498A (ja) * 1986-03-10 1987-09-30 Fujitsu Ltd 消去及び書き込み可能な読み出し専用メモリ

Also Published As

Publication number Publication date
KR900010778A (ko) 1990-07-09
DE3938638A1 (de) 1990-06-07
US4989184A (en) 1991-01-29
JPH02154394A (ja) 1990-06-13
DE3938638C2 (enExample) 1993-09-16

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