JPH02151866A - フォトレジスト現像液 - Google Patents
フォトレジスト現像液Info
- Publication number
- JPH02151866A JPH02151866A JP29253988A JP29253988A JPH02151866A JP H02151866 A JPH02151866 A JP H02151866A JP 29253988 A JP29253988 A JP 29253988A JP 29253988 A JP29253988 A JP 29253988A JP H02151866 A JPH02151866 A JP H02151866A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- aqueous solution
- weight
- developer
- solution according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 31
- 239000007788 liquid Substances 0.000 title 1
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims description 23
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 5
- 239000004480 active ingredient Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 229910021645 metal ion Inorganic materials 0.000 abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 11
- 239000008367 deionised water Substances 0.000 abstract description 8
- 229910021641 deionized water Inorganic materials 0.000 abstract description 8
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract description 3
- PUAQLLVFLMYYJJ-UHFFFAOYSA-N 2-aminopropiophenone Chemical compound CC(N)C(=O)C1=CC=CC=C1 PUAQLLVFLMYYJJ-UHFFFAOYSA-N 0.000 abstract 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 7
- -1 trimethylethyl Chemical group 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- OQZAQBGJENJMHT-UHFFFAOYSA-N 1,3-dibromo-5-methoxybenzene Chemical compound COC1=CC(Br)=CC(Br)=C1 OQZAQBGJENJMHT-UHFFFAOYSA-N 0.000 description 1
- IWSZDQRGNFLMJS-UHFFFAOYSA-N 2-(dibutylamino)ethanol Chemical compound CCCCN(CCO)CCCC IWSZDQRGNFLMJS-UHFFFAOYSA-N 0.000 description 1
- ZCMDQLIBAYWMDE-UHFFFAOYSA-N 2-[hexyl(methyl)amino]ethanol Chemical compound CCCCCCN(C)CCO ZCMDQLIBAYWMDE-UHFFFAOYSA-N 0.000 description 1
- OFRNAQFDQREXMU-UHFFFAOYSA-N 2-[methyl(propan-2-yl)amino]ethanol Chemical compound CC(C)N(C)CCO OFRNAQFDQREXMU-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- AJEUSSNTTSVFIZ-UHFFFAOYSA-M 3-hydroxypropyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCCO AJEUSSNTTSVFIZ-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-O N-dimethylethanolamine Chemical compound C[NH+](C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-O 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- ZYWUVGFIXPNBDL-UHFFFAOYSA-N n,n-diisopropylaminoethanol Chemical compound CC(C)N(C(C)C)CCO ZYWUVGFIXPNBDL-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- JVOPCCBEQRRLOJ-UHFFFAOYSA-M tetrapentylazanium;hydroxide Chemical group [OH-].CCCCC[N+](CCCCC)(CCCCC)CCCCC JVOPCCBEQRRLOJ-UHFFFAOYSA-M 0.000 description 1
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29253988A JPH02151866A (ja) | 1988-11-21 | 1988-11-21 | フォトレジスト現像液 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29253988A JPH02151866A (ja) | 1988-11-21 | 1988-11-21 | フォトレジスト現像液 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02151866A true JPH02151866A (ja) | 1990-06-11 |
| JPH0541980B2 JPH0541980B2 (enrdf_load_stackoverflow) | 1993-06-25 |
Family
ID=17783097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29253988A Granted JPH02151866A (ja) | 1988-11-21 | 1988-11-21 | フォトレジスト現像液 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02151866A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999053381A1 (en) * | 1998-04-15 | 1999-10-21 | Etec Systems, Inc. | Photoresist developer and method of development |
| JP2010066569A (ja) * | 2008-09-11 | 2010-03-25 | Tosoh Corp | レジスト現像液 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57114141A (en) * | 1981-01-06 | 1982-07-15 | San Ei Chem Ind Ltd | Increasing method for developing power of developer for positive type photosensitive resin |
| JPS6419345A (en) * | 1987-04-06 | 1989-01-23 | Thiokol Morton Inc | High contrast positive photoresist developer containing alkanol amine |
-
1988
- 1988-11-21 JP JP29253988A patent/JPH02151866A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57114141A (en) * | 1981-01-06 | 1982-07-15 | San Ei Chem Ind Ltd | Increasing method for developing power of developer for positive type photosensitive resin |
| JPS6419345A (en) * | 1987-04-06 | 1989-01-23 | Thiokol Morton Inc | High contrast positive photoresist developer containing alkanol amine |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999053381A1 (en) * | 1998-04-15 | 1999-10-21 | Etec Systems, Inc. | Photoresist developer and method of development |
| US6107009A (en) * | 1998-04-15 | 2000-08-22 | Tan; Zoilo Cheng Ho | Photoresist developer and method |
| US6200736B1 (en) * | 1998-04-15 | 2001-03-13 | Etec Systems, Inc. | Photoresist developer and method |
| JP2010066569A (ja) * | 2008-09-11 | 2010-03-25 | Tosoh Corp | レジスト現像液 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0541980B2 (enrdf_load_stackoverflow) | 1993-06-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |