JPH0214781B2 - - Google Patents
Info
- Publication number
- JPH0214781B2 JPH0214781B2 JP14839980A JP14839980A JPH0214781B2 JP H0214781 B2 JPH0214781 B2 JP H0214781B2 JP 14839980 A JP14839980 A JP 14839980A JP 14839980 A JP14839980 A JP 14839980A JP H0214781 B2 JPH0214781 B2 JP H0214781B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- impurity concentration
- island region
- thyristor
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- 230000000087 stabilizing effect Effects 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 238000002955 isolation Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14839980A JPS5772345A (en) | 1980-10-24 | 1980-10-24 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14839980A JPS5772345A (en) | 1980-10-24 | 1980-10-24 | Semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5772345A JPS5772345A (en) | 1982-05-06 |
| JPH0214781B2 true JPH0214781B2 (sv) | 1990-04-10 |
Family
ID=15451908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14839980A Granted JPS5772345A (en) | 1980-10-24 | 1980-10-24 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5772345A (sv) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0397880U (sv) * | 1990-01-26 | 1991-10-09 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4963026B2 (ja) * | 2006-01-26 | 2012-06-27 | 株式会社豊田中央研究所 | 静電気保護用半導体装置 |
-
1980
- 1980-10-24 JP JP14839980A patent/JPS5772345A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0397880U (sv) * | 1990-01-26 | 1991-10-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5772345A (en) | 1982-05-06 |
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