JPH0214773B2 - - Google Patents
Info
- Publication number
- JPH0214773B2 JPH0214773B2 JP57027011A JP2701182A JPH0214773B2 JP H0214773 B2 JPH0214773 B2 JP H0214773B2 JP 57027011 A JP57027011 A JP 57027011A JP 2701182 A JP2701182 A JP 2701182A JP H0214773 B2 JPH0214773 B2 JP H0214773B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- compound semiconductor
- algaas
- gas
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000007789 gas Substances 0.000 claims description 26
- 150000001875 compounds Chemical class 0.000 claims description 23
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 19
- 238000001020 plasma etching Methods 0.000 claims description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 8
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 6
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 26
- 239000000470 constituent Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2701182A JPS58143530A (ja) | 1982-02-22 | 1982-02-22 | 化合物半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2701182A JPS58143530A (ja) | 1982-02-22 | 1982-02-22 | 化合物半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58143530A JPS58143530A (ja) | 1983-08-26 |
| JPH0214773B2 true JPH0214773B2 (de) | 1990-04-10 |
Family
ID=12209159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2701182A Granted JPS58143530A (ja) | 1982-02-22 | 1982-02-22 | 化合物半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58143530A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0741986U (ja) * | 1993-12-28 | 1995-07-21 | 株式会社貝野鉄工所 | 溶接機の接地部材 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH073826B2 (ja) * | 1982-02-26 | 1995-01-18 | 富士通株式会社 | 半導体装置の製造方法 |
| JPS60117631A (ja) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | 化合物半導体のドライエッチング方法 |
| EP0144142B1 (de) * | 1983-11-30 | 1991-12-18 | Kabushiki Kaisha Toshiba | Verfahren zur Herstellung eines Halbleiterlasers |
| JP2654454B2 (ja) * | 1988-04-29 | 1997-09-17 | 豊田合成株式会社 | 半導体のドライエッチング方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5518399A (en) * | 1978-07-27 | 1980-02-08 | Eaton Corp | Plasma etching method of aluminium article |
| JPS5629328A (en) * | 1979-08-17 | 1981-03-24 | Toshiba Corp | Plasma etching method |
-
1982
- 1982-02-22 JP JP2701182A patent/JPS58143530A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5518399A (en) * | 1978-07-27 | 1980-02-08 | Eaton Corp | Plasma etching method of aluminium article |
| JPS5629328A (en) * | 1979-08-17 | 1981-03-24 | Toshiba Corp | Plasma etching method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0741986U (ja) * | 1993-12-28 | 1995-07-21 | 株式会社貝野鉄工所 | 溶接機の接地部材 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58143530A (ja) | 1983-08-26 |
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