JPH0214426B2 - - Google Patents
Info
- Publication number
- JPH0214426B2 JPH0214426B2 JP19675384A JP19675384A JPH0214426B2 JP H0214426 B2 JPH0214426 B2 JP H0214426B2 JP 19675384 A JP19675384 A JP 19675384A JP 19675384 A JP19675384 A JP 19675384A JP H0214426 B2 JPH0214426 B2 JP H0214426B2
- Authority
- JP
- Japan
- Prior art keywords
- energy
- deposited film
- ion beam
- substrate
- vapor deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010884 ion-beam technique Methods 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 40
- 239000000126 substance Substances 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 76
- 238000000034 method Methods 0.000 description 22
- 238000007740 vapor deposition Methods 0.000 description 21
- 150000002500 ions Chemical class 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19675384A JPS6176665A (ja) | 1984-09-21 | 1984-09-21 | 蒸着膜形成装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19675384A JPS6176665A (ja) | 1984-09-21 | 1984-09-21 | 蒸着膜形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6176665A JPS6176665A (ja) | 1986-04-19 |
| JPH0214426B2 true JPH0214426B2 (ru) | 1990-04-09 |
Family
ID=16363037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19675384A Granted JPS6176665A (ja) | 1984-09-21 | 1984-09-21 | 蒸着膜形成装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6176665A (ru) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62177176A (ja) * | 1986-01-30 | 1987-08-04 | Nippon Steel Corp | 薄膜形成装置 |
| JPH0774441B2 (ja) * | 1987-06-05 | 1995-08-09 | 株式会社日立製作所 | イオンビ−ムスパツタ装置 |
| JPH0748368B2 (ja) * | 1989-12-19 | 1995-05-24 | 株式会社日本製鋼所 | 複合イオンビーム照射方法及び照射装置 |
| JPH04173961A (ja) * | 1990-11-06 | 1992-06-22 | Japan Steel Works Ltd:The | 複合イオンビームによるダイナミックミキシング方法 |
| JP7220122B2 (ja) * | 2019-06-05 | 2023-02-09 | 株式会社アルバック | イオン注入装置、イオン源 |
-
1984
- 1984-09-21 JP JP19675384A patent/JPS6176665A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6176665A (ja) | 1986-04-19 |
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