JPH02143417A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH02143417A
JPH02143417A JP29792088A JP29792088A JPH02143417A JP H02143417 A JPH02143417 A JP H02143417A JP 29792088 A JP29792088 A JP 29792088A JP 29792088 A JP29792088 A JP 29792088A JP H02143417 A JPH02143417 A JP H02143417A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
recesses
si
insulating layer
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29792088A
Inventor
Kazuhiko Shirakawa
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To leave single crystal unremoved only within recesses when a semiconductor device having an Si layer on an insulating layer is manufactured, by forming the insulating layer on an Si substrate, forming recesses in the regions of the insulating layer where elements are to be formed, depositing a polycrystalline Si layer on the whole surface including the recesses and melting and curing the polycrystalline Si to convert the same into single crystal.
CONSTITUTION: An insulating layer 2 is formed on one surface of an Si substrate 2 either by thermal oxidation of the substrate 1 or by a CVD process. Recesses 16 are formed in element forming regions of the insulating layer so that each recess has configurations corresponding to those of the element to be formed there. A polycrystalline Si layer 3 is deposited on the whole surface including the recesses 16 and covered with an anti-reflection insulating layer 4. A laser beam 5 is applied to the surface so that the layer 3 is molten and cured to provide a single crystal Si layer. While the layer 3 is molten, the part of the layer 3 present on the layer 2 also flows into the recesses 16 whereby the surface is flattened substantially. Then, the single crystal Si layer other than the parts thereof present in the recesses 16 is removed by an RIE process such that only the single crystal Si as required is left unremoved within the recesses 16.
COPYRIGHT: (C)1990,JPO&Japio
JP29792088A 1988-11-24 1988-11-24 Manufacture of semiconductor device Pending JPH02143417A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29792088A JPH02143417A (en) 1988-11-24 1988-11-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29792088A JPH02143417A (en) 1988-11-24 1988-11-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH02143417A true true JPH02143417A (en) 1990-06-01

Family

ID=17852803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29792088A Pending JPH02143417A (en) 1988-11-24 1988-11-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH02143417A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004006644A (en) * 2002-01-28 2004-01-08 Semiconductor Energy Lab Co Ltd Semiconductor device and its fabricating method
JP2004088084A (en) * 2002-06-25 2004-03-18 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
US7372073B2 (en) 1996-02-23 2008-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film, semiconductor device and manufacturing method thereof
JP2009049398A (en) * 2007-07-26 2009-03-05 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device
US7615384B2 (en) 2002-03-26 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and method of manufacturing the same
US7709895B2 (en) 2002-02-08 2010-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having insulating stripe patterns
US7737506B2 (en) 2002-01-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7795734B2 (en) 2002-01-28 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7372073B2 (en) 1996-02-23 2008-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film, semiconductor device and manufacturing method thereof
JP2004006644A (en) * 2002-01-28 2004-01-08 Semiconductor Energy Lab Co Ltd Semiconductor device and its fabricating method
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2011101057A (en) * 2002-01-28 2011-05-19 Semiconductor Energy Lab Co Ltd Semiconductor device
US7737506B2 (en) 2002-01-28 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7795734B2 (en) 2002-01-28 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7709895B2 (en) 2002-02-08 2010-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having insulating stripe patterns
US7615384B2 (en) 2002-03-26 2009-11-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and method of manufacturing the same
JP2004088084A (en) * 2002-06-25 2004-03-18 Semiconductor Energy Lab Co Ltd Method of manufacturing semiconductor device
JP2009049398A (en) * 2007-07-26 2009-03-05 Semiconductor Energy Lab Co Ltd Method for manufacturing semiconductor device

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