JPH0213928B2 - - Google Patents

Info

Publication number
JPH0213928B2
JPH0213928B2 JP58095124A JP9512483A JPH0213928B2 JP H0213928 B2 JPH0213928 B2 JP H0213928B2 JP 58095124 A JP58095124 A JP 58095124A JP 9512483 A JP9512483 A JP 9512483A JP H0213928 B2 JPH0213928 B2 JP H0213928B2
Authority
JP
Japan
Prior art keywords
contact
contacts
rectifying
ohmic
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58095124A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5961190A (ja
Inventor
Roorensu Furiiofu Jon
Neruson Jakuson Toomasu
Eritsuku Rautsukusu Suchiibun
Matsukufuaasun Utsudooru Jerii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5961190A publication Critical patent/JPS5961190A/ja
Publication of JPH0213928B2 publication Critical patent/JPH0213928B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/871—Vertical FETs having Schottky gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58095124A 1982-09-17 1983-05-31 半導体構造体 Granted JPS5961190A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US419381 1982-09-17
US06/419,381 US4638342A (en) 1982-09-17 1982-09-17 Space charge modulation device

Publications (2)

Publication Number Publication Date
JPS5961190A JPS5961190A (ja) 1984-04-07
JPH0213928B2 true JPH0213928B2 (show.php) 1990-04-05

Family

ID=23662022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58095124A Granted JPS5961190A (ja) 1982-09-17 1983-05-31 半導体構造体

Country Status (4)

Country Link
US (1) US4638342A (show.php)
EP (1) EP0106044B1 (show.php)
JP (1) JPS5961190A (show.php)
DE (1) DE3382340D1 (show.php)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0687483B2 (ja) * 1988-02-13 1994-11-02 株式会社東芝 半導体装置
US5019530A (en) * 1990-04-20 1991-05-28 International Business Machines Corporation Method of making metal-insulator-metal junction structures with adjustable barrier heights
US5612547A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corporation Silicon carbide static induction transistor
US9520445B2 (en) * 2011-07-12 2016-12-13 Helmholtz-Zentrum Dresden-Rossendorf E. V. Integrated non-volatile memory elements, design and use

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3684902A (en) * 1966-06-07 1972-08-15 Westinghouse Electric Corp Semiconductor switch device
US3549961A (en) * 1968-06-19 1970-12-22 Int Rectifier Corp Triac structure and method of manufacture
USRE29971E (en) * 1971-07-31 1979-04-17 Zaidan Hojin Hondotai Kenkyn Shinkokai Field effect semiconductor device having an unsaturated triode vacuum tube characteristic
JPS5039880A (show.php) * 1973-08-13 1975-04-12
US4066483A (en) * 1976-07-07 1978-01-03 Western Electric Company, Inc. Gate-controlled bidirectional switching device
JPS5357769A (en) * 1976-11-04 1978-05-25 Mitsubishi Electric Corp Electrostatic induction transistor
US4132996A (en) * 1976-11-08 1979-01-02 General Electric Company Electric field-controlled semiconductor device
US4141021A (en) * 1977-02-14 1979-02-20 Varian Associates, Inc. Field effect transistor having source and gate electrodes on opposite faces of active layer
US4236166A (en) * 1979-07-05 1980-11-25 Bell Telephone Laboratories, Incorporated Vertical field effect transistor
JPS5636154A (en) * 1979-09-03 1981-04-09 Seiko Instr & Electronics Ltd Mes type integrated circuit
DE3040873C2 (de) * 1980-10-30 1984-02-23 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekttransistor
JPS56138957A (en) * 1981-03-07 1981-10-29 Semiconductor Res Found Electrostatic induction type semiconductor device

Also Published As

Publication number Publication date
EP0106044A2 (en) 1984-04-25
JPS5961190A (ja) 1984-04-07
EP0106044A3 (en) 1987-03-25
DE3382340D1 (de) 1991-08-22
US4638342A (en) 1987-01-20
EP0106044B1 (en) 1991-07-17

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