JPH0213824B2 - - Google Patents

Info

Publication number
JPH0213824B2
JPH0213824B2 JP56159344A JP15934481A JPH0213824B2 JP H0213824 B2 JPH0213824 B2 JP H0213824B2 JP 56159344 A JP56159344 A JP 56159344A JP 15934481 A JP15934481 A JP 15934481A JP H0213824 B2 JPH0213824 B2 JP H0213824B2
Authority
JP
Japan
Prior art keywords
thyristor
layer
junction
screen
zener diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56159344A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5792864A (en
Inventor
Yonson Peruueritsuku
Subedoberugu Peru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ABB AB
Original Assignee
Asea Brown Boveri AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri AB filed Critical Asea Brown Boveri AB
Publication of JPS5792864A publication Critical patent/JPS5792864A/ja
Publication of JPH0213824B2 publication Critical patent/JPH0213824B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Thyristors (AREA)
JP56159344A 1980-10-08 1981-10-06 Thyristor Granted JPS5792864A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8007036A SE423946B (sv) 1980-10-08 1980-10-08 Tyristor anordnad for sjelvtendning

Publications (2)

Publication Number Publication Date
JPS5792864A JPS5792864A (en) 1982-06-09
JPH0213824B2 true JPH0213824B2 (en, 2012) 1990-04-05

Family

ID=20341931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56159344A Granted JPS5792864A (en) 1980-10-08 1981-10-06 Thyristor

Country Status (8)

Country Link
US (1) US4437107A (en, 2012)
EP (1) EP0049445B1 (en, 2012)
JP (1) JPS5792864A (en, 2012)
AU (1) AU546098B2 (en, 2012)
BR (1) BR8106477A (en, 2012)
DE (1) DE3175822D1 (en, 2012)
MX (1) MX149906A (en, 2012)
SE (1) SE423946B (en, 2012)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3227536A1 (de) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart Darlington-transistorschaltung
DE3201545A1 (de) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart Planare halbleiteranordnung
US4779126A (en) * 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
JPS61158177A (ja) * 1984-12-28 1986-07-17 Toshiba Corp 半導体装置
FR2598043A1 (fr) 1986-04-25 1987-10-30 Thomson Csf Composant semiconducteur de protection contre les surtensions et surintensites
GB2193596A (en) * 1986-08-08 1988-02-10 Philips Electronic Associated A semiconductor diode
US4982258A (en) * 1988-05-02 1991-01-01 General Electric Company Metal oxide semiconductor gated turn-off thyristor including a low lifetime region
JPH01281771A (ja) * 1988-05-09 1989-11-13 Nec Corp 半導体保護素子
US4864379A (en) * 1988-05-20 1989-09-05 General Electric Company Bipolar transistor with field shields
US5223735A (en) * 1988-09-30 1993-06-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device in which circuit functions can be remedied or changed and the method for producing the same
JP2956434B2 (ja) * 1992-10-30 1999-10-04 株式会社デンソー 絶縁分離形半導体装置
US5602404A (en) * 1995-01-18 1997-02-11 National Semiconductor Corporation Low voltage triggering silicon controlled rectifier structures for ESD protection
US5602046A (en) * 1996-04-12 1997-02-11 National Semiconductor Corporation Integrated zener diode protection structures and fabrication methods for DMOS power devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1166381B (de) 1956-07-06 1964-03-26 Siemens Ag Verstaerkendes Halbleiterbauelement mit einer isolierten Steuerelektrode ueber einemin Sperrichtung vorgespannten pn-UEbergang und Verfahren zu seinem Herstellen
NL274830A (en, 2012) 1961-04-12
US3236698A (en) 1964-04-08 1966-02-22 Clevite Corp Semiconductive device and method of making the same
US3427512A (en) 1965-11-26 1969-02-11 Gen Electric Semiconductor low voltage switch
US3432731A (en) 1966-10-31 1969-03-11 Fairchild Camera Instr Co Planar high voltage four layer structures
US3524114A (en) * 1968-02-29 1970-08-11 Jearld L Hutson Thyristor having sensitive gate turn-on characteristics
US4083063A (en) * 1973-10-09 1978-04-04 General Electric Company Gate turnoff thyristor with a pilot scr
GB1566540A (en) * 1977-12-14 1980-04-30 Cutler Hammer World Trade Inc Amplified gate thyristor
SE414357B (sv) * 1978-08-17 1980-07-21 Asea Ab Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp

Also Published As

Publication number Publication date
EP0049445A2 (de) 1982-04-14
JPS5792864A (en) 1982-06-09
MX149906A (es) 1984-02-07
SE8007036L (sv) 1982-04-09
BR8106477A (pt) 1982-06-22
AU7603781A (en) 1982-04-22
SE423946B (sv) 1982-06-14
EP0049445B1 (de) 1987-01-07
AU546098B2 (en) 1985-08-15
US4437107A (en) 1984-03-13
DE3175822D1 (en) 1987-02-12
EP0049445A3 (en) 1983-06-22

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