BR8106477A - Tiristor - Google Patents

Tiristor

Info

Publication number
BR8106477A
BR8106477A BR8106477A BR8106477A BR8106477A BR 8106477 A BR8106477 A BR 8106477A BR 8106477 A BR8106477 A BR 8106477A BR 8106477 A BR8106477 A BR 8106477A BR 8106477 A BR8106477 A BR 8106477A
Authority
BR
Brazil
Prior art keywords
thyristor
Prior art date
Application number
BR8106477A
Other languages
English (en)
Inventor
Per Erik Jonsson
Per Svedberg
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Publication of BR8106477A publication Critical patent/BR8106477A/pt

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/87Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Thyristors (AREA)
BR8106477A 1980-10-08 1981-10-07 Tiristor BR8106477A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8007036A SE423946B (sv) 1980-10-08 1980-10-08 Tyristor anordnad for sjelvtendning

Publications (1)

Publication Number Publication Date
BR8106477A true BR8106477A (pt) 1982-06-22

Family

ID=20341931

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8106477A BR8106477A (pt) 1980-10-08 1981-10-07 Tiristor

Country Status (8)

Country Link
US (1) US4437107A (pt)
EP (1) EP0049445B1 (pt)
JP (1) JPS5792864A (pt)
AU (1) AU546098B2 (pt)
BR (1) BR8106477A (pt)
DE (1) DE3175822D1 (pt)
MX (1) MX149906A (pt)
SE (1) SE423946B (pt)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3201545A1 (de) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart Planare halbleiteranordnung
DE3227536A1 (de) * 1982-01-20 1983-07-28 Robert Bosch Gmbh, 7000 Stuttgart Darlington-transistorschaltung
US4779126A (en) * 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
JPS61158177A (ja) * 1984-12-28 1986-07-17 Toshiba Corp 半導体装置
FR2598043A1 (fr) 1986-04-25 1987-10-30 Thomson Csf Composant semiconducteur de protection contre les surtensions et surintensites
GB2193596A (en) * 1986-08-08 1988-02-10 Philips Electronic Associated A semiconductor diode
US4982258A (en) * 1988-05-02 1991-01-01 General Electric Company Metal oxide semiconductor gated turn-off thyristor including a low lifetime region
JPH01281771A (ja) * 1988-05-09 1989-11-13 Nec Corp 半導体保護素子
US4864379A (en) * 1988-05-20 1989-09-05 General Electric Company Bipolar transistor with field shields
US5223735A (en) * 1988-09-30 1993-06-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device in which circuit functions can be remedied or changed and the method for producing the same
JP2956434B2 (ja) * 1992-10-30 1999-10-04 株式会社デンソー 絶縁分離形半導体装置
US5602404A (en) * 1995-01-18 1997-02-11 National Semiconductor Corporation Low voltage triggering silicon controlled rectifier structures for ESD protection
US5602046A (en) * 1996-04-12 1997-02-11 National Semiconductor Corporation Integrated zener diode protection structures and fabrication methods for DMOS power devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3524114A (en) * 1968-02-29 1970-08-11 Jearld L Hutson Thyristor having sensitive gate turn-on characteristics
US4083063A (en) * 1973-10-09 1978-04-04 General Electric Company Gate turnoff thyristor with a pilot scr
GB1566540A (en) * 1977-12-14 1980-04-30 Cutler Hammer World Trade Inc Amplified gate thyristor
SE414357B (sv) * 1978-08-17 1980-07-21 Asea Ab Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp

Also Published As

Publication number Publication date
DE3175822D1 (en) 1987-02-12
EP0049445A3 (en) 1983-06-22
MX149906A (es) 1984-02-07
AU7603781A (en) 1982-04-22
SE423946B (sv) 1982-06-14
EP0049445B1 (de) 1987-01-07
US4437107A (en) 1984-03-13
EP0049445A2 (de) 1982-04-14
JPS5792864A (en) 1982-06-09
JPH0213824B2 (pt) 1990-04-05
SE8007036L (sv) 1982-04-09
AU546098B2 (en) 1985-08-15

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