JPH0212663U - - Google Patents
Info
- Publication number
- JPH0212663U JPH0212663U JP8958488U JP8958488U JPH0212663U JP H0212663 U JPH0212663 U JP H0212663U JP 8958488 U JP8958488 U JP 8958488U JP 8958488 U JP8958488 U JP 8958488U JP H0212663 U JPH0212663 U JP H0212663U
- Authority
- JP
- Japan
- Prior art keywords
- peripheral base
- flexible
- mechanical quantity
- semiconductor
- flexible portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 2
- 238000005259 measurement Methods 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
Description
第１図および第２図ａ，ｂは、本考案の一実施
例を示し、第１図は半導体加速度センサの側面図
、第２図ａはそのセンサ部の上面図、第２図ｂは
ａの正面図である。第３図は他の実施例を示す断
面図である。第４図は従来の半導体加速度センサ
を示す断面図である。
１：周囲基部、２：撓み部、３：重り部、４：
ピエゾ抵抗、５Ｕ，５Ｌ：ストツパ、１１：半田
バンプ、１２：プリント基板、１３：鉄板。
1 and 2a and 2b show an embodiment of the present invention, in which FIG. 1 is a side view of a semiconductor acceleration sensor, FIG. 2a is a top view of the sensor part, and FIG. 2b is a. FIG. FIG. 3 is a sectional view showing another embodiment. FIG. 4 is a sectional view showing a conventional semiconductor acceleration sensor. 1: Surrounding base, 2: Flexible part, 3: Weight part, 4:
Piezoresistor, 5U, 5L: Stopper, 11: Solder bump, 12: Printed circuit board, 13: Iron plate.
Claims (1)
基部に囲まれ該周囲基部に連設される撓み部と、
撓み部に設けられる重り部とを形成し、撓み部の
歪をピエゾ抵抗素子で検出して力学量を検出する
半導体力学量センサにおいて、 前記周囲基部の上下面の少なくとも一方を半田
バンプにより実装基板に接合し、測定範囲内の荷
重入力時に前記撓み部が十分に撓むとともに過大
荷重の入力時に重り部が前記実装基板に当接して
撓み部の歪量を制限するように、前記周囲基部と
実装基板との間隙を前記半田バンプにより形成す
ることを特徴とする半導体力学量センサ。[Claims for Utility Model Registration] A semiconductor substrate is processed to form a peripheral base, a flexible portion surrounded by the peripheral base and connected to the peripheral base,
In a semiconductor mechanical quantity sensor that forms a weight part provided on a flexible part and detects a mechanical quantity by detecting strain in the flexible part with a piezoresistive element, at least one of the upper and lower surfaces of the peripheral base is attached to a mounting board by solder bumps. The peripheral base and the mounting portion are connected to each other so that the flexible portion is sufficiently bent when a load within the measurement range is input, and the weight portion contacts the mounting board to limit the amount of distortion of the flexible portion when an excessive load is input. A semiconductor mechanical quantity sensor characterized in that a gap between the solder bump and the substrate is formed by the solder bump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8958488U JPH0212663U (en) | 1988-07-06 | 1988-07-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8958488U JPH0212663U (en) | 1988-07-06 | 1988-07-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0212663U true JPH0212663U (en) | 1990-01-26 |
Family
ID=31314129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8958488U Pending JPH0212663U (en) | 1988-07-06 | 1988-07-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0212663U (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0367177A (en) * | 1989-08-07 | 1991-03-22 | Nippondenso Co Ltd | Semiconductor acceleration sensor |
| JP2004212246A (en) * | 2003-01-06 | 2004-07-29 | Hitachi Metals Ltd | Acceleration sensor |
| WO2007061062A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Method for manufacturing wafer level package structure |
| WO2007061047A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Wafer level package structure and method for manufacturing same |
| WO2007061056A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Sensor device and method for manufacturing same |
| WO2007061050A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Sensor device and method for manufacturing same |
| WO2007061059A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Sensor device and method for manufacturing same |
-
1988
- 1988-07-06 JP JP8958488U patent/JPH0212663U/ja active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0367177A (en) * | 1989-08-07 | 1991-03-22 | Nippondenso Co Ltd | Semiconductor acceleration sensor |
| JP2004212246A (en) * | 2003-01-06 | 2004-07-29 | Hitachi Metals Ltd | Acceleration sensor |
| WO2007061062A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Method for manufacturing wafer level package structure |
| WO2007061054A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Wafer level package structure and sensor device obtained from such package structure |
| WO2007061047A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Wafer level package structure and method for manufacturing same |
| WO2007061056A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Sensor device and method for manufacturing same |
| WO2007061050A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Sensor device and method for manufacturing same |
| WO2007061059A1 (en) * | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Sensor device and method for manufacturing same |
| US7674638B2 (en) | 2005-11-25 | 2010-03-09 | Panasonic Electric Works Co., Ltd. | Sensor device and production method therefor |
| US8026594B2 (en) | 2005-11-25 | 2011-09-27 | Panasonic Electric Works Co., Ltd. | Sensor device and production method therefor |
| US8067769B2 (en) | 2005-11-25 | 2011-11-29 | Panasonic Electric Works Co., Ltd. | Wafer level package structure, and sensor device obtained from the same package structure |
| US8080869B2 (en) | 2005-11-25 | 2011-12-20 | Panasonic Electric Works Co., Ltd. | Wafer level package structure and production method therefor |
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