JPH0367177A - Semiconductor acceleration sensor - Google Patents
Semiconductor acceleration sensorInfo
- Publication number
- JPH0367177A JPH0367177A JP20418789A JP20418789A JPH0367177A JP H0367177 A JPH0367177 A JP H0367177A JP 20418789 A JP20418789 A JP 20418789A JP 20418789 A JP20418789 A JP 20418789A JP H0367177 A JPH0367177 A JP H0367177A
- Authority
- JP
- Japan
- Prior art keywords
- movable part
- acceleration
- silicon substrate
- semiconductor chip
- acceleration sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001133 acceleration Effects 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 abstract description 31
- 229910052710 silicon Inorganic materials 0.000 abstract description 28
- 239000010703 silicon Substances 0.000 abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 27
- 230000006378 damage Effects 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 230000003321 amplification Effects 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000003921 oil Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、半導体加速度（振動〉センサ゛に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor acceleration (vibration) sensor.
［従来技術及び課題］
従来、半導体加速度センサの感度を上げるために周辺部
のシリコンを重りとして使用しているものがあるが、電
気的な接続を取るためのワイヤーボンディングの線が長
くなってしまい、大きな加速度を検出する時にワイヤが
垂れ下がり接触したり切れたりする場合がある。又、重
りを大きくした加速度センサでは過大な加速篩が加わっ
た時に梁部が破壊するためにオイル中に入れてダンプさ
せる等の対策を施していたが設計の自由度が低く、又コ
ストのかかるものになっている。[Prior art and issues] Conventionally, some semiconductor acceleration sensors have used peripheral silicon as a weight to increase their sensitivity, but the wire bonding lines for making electrical connections become long. When detecting large accelerations, the wires may hang down and touch or break. In addition, in the case of acceleration sensors with a large weight, the beams break when excessive acceleration is applied, so countermeasures such as dumping them in oil have been taken, but this reduces the degree of freedom in design and is costly. It has become a thing.
この発明の目的は、ワイヤ−ボンディングのワイヤの接
触等を回避するとともに、過大な加速度が加わった時に
容易に可動部の破壊を防止することができる半導体加速
度センサを提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor acceleration sensor that can avoid contact between wires during wire bonding and easily prevent damage to a movable part when excessive acceleration is applied.
［課題を解決するための手段］
この発明は、半導体チップの片面においてピエゾ抵抗を
有する梁部と重り部とからなる可動部を形成し、この半
導体チップの可動部が基台に対向する状態で所定高さの
バンプを介して当該半導体チップを基台上にボンディン
グし、前記基台を過大な加速度が加わった際の前記可動
部のストッパとしてなる半導体加速度センサをその要旨
とするものであるっ
［作用１
バンプにて電極の取出しができるとともに、過大な加速
度が加わった際に、基台が半導体チップの可動部のスト
ッパとして動（。[Means for Solving the Problems] This invention forms a movable part consisting of a beam part having piezoresistance and a weight part on one side of a semiconductor chip, and in a state where the movable part of this semiconductor chip faces a base. The gist of the sensor is a semiconductor acceleration sensor in which the semiconductor chip is bonded to a base via bumps of a predetermined height, and the base serves as a stopper for the movable part when excessive acceleration is applied. [Function 1] The electrode can be taken out using the bump, and when excessive acceleration is applied, the base moves as a stopper for the movable part of the semiconductor chip.
［実施例］
以下、この発明を具体化した一実施例を図面に従って説
明する。[Example] An example embodying the present invention will be described below with reference to the drawings.
第１図には本実施例の半導体加速度センサの断面を示し
、第２図には第１図におけるＡ−Ａ断面を示す。ざらに
、第３〜第７図にはその製造工程を示す。FIG. 1 shows a cross section of the semiconductor acceleration sensor of this embodiment, and FIG. 2 shows a cross section taken along line AA in FIG. Briefly, the manufacturing process is shown in FIGS. 3 to 7.
第３図において、例えば、Ｎ型で５〜２０Ω・ｃｍの（
１００）シリコン基板１に熱酸化膜２を０゜１〜１μｍ
形成する。このシリコン基板１に対しもう１枚の同様な
Ｎ型シリコン基板３を、いわゆるウェハ直接接合で８０
０〜１１００℃で１時間程度の熱処理により接合し、ざ
らに、Ｎ型シリコン基板３を必要な厚さに鏡面研磨する
。そして、所定領域にボロン不純物を、例えばイオン注
入で導入しＰ ピエゾ抵抗層４を第２図に示すように合
計１６個形成する。さらに、必要ならば半導体素子を形
成し、ＩＣ回路部等をＮ型シリコン基板３内に形成し、
アルミ等での配線層を形成する。In Fig. 3, for example, N type (5 to 20 Ωcm) (
100) Spread thermal oxide film 2 on silicon substrate 1 with a thickness of 0°1 to 1 μm
Form. Another similar N-type silicon substrate 3 is attached to this silicon substrate 1 by so-called wafer direct bonding.
They are bonded by heat treatment at 0 to 1100[deg.] C. for about one hour, and the N-type silicon substrate 3 is roughly mirror-polished to a required thickness. Then, a boron impurity is introduced into a predetermined region by, for example, ion implantation to form a total of 16 P2 piezoresistive layers 4 as shown in FIG. Furthermore, if necessary, a semiconductor element is formed, an IC circuit section, etc. is formed in the N-type silicon substrate 3,
Form a wiring layer of aluminum or the like.
尚、第３図おいて、３ａは熱酸化膜である。In addition, in FIG. 3, 3a is a thermal oxide film.
次に、シリコン基板１にエツチングにて所定の深さの第
１の凹部５を中央の重り支持部６を除き環状に形成する
。このエツチングの際に、ＫＯＨ等のアルカリエツチン
グ液又は弗硝酸系のエツチング液が使用される。その結
果、第３図に示すようになる。Next, a first recess 5 having a predetermined depth is formed in the silicon substrate 1 by etching, excluding the central weight support portion 6, in an annular shape. During this etching, an alkaline etching solution such as KOH or a hydrofluoric acid based etching solution is used. The result is as shown in FIG.
引き続き、第４図に示すように、第１の凹部５内でのシ
リコン基板１にエツチングにて熱酸化膜２に至る環状の
第２の凹部７ａと、重り支持部６を除き環状の第２の凹
部７ｂを形成する。この場合、エツチングは熱酸化膜２
において自動的に停止させることができる。Subsequently, as shown in FIG. 4, the silicon substrate 1 in the first recess 5 is etched to form a second annular recess 7a extending to the thermal oxide film 2 and a second annular recess excluding the weight support 6. A recess 7b is formed. In this case, etching is a thermal oxide film 2
It can be stopped automatically at any time.
続いて、第５図に示ずように、シリコン基板８上に前記
シリコン基板１を配置し、両者１．８を４００〜４５０
℃の低温でのウェハ直接接合で゛接合する。この際、シ
リコン基板８の代りに、シソコンと熱膨張係数がほぼ等
しいパイレックスガラス（商標名）を用い、陽極接合で
接合してもよい。Subsequently, as shown in FIG. 5, the silicon substrate 1 is placed on the silicon substrate 8, and both 1.8
Bonding is performed by direct wafer bonding at a low temperature of ℃. At this time, instead of the silicon substrate 8, Pyrex glass (trade name) having approximately the same coefficient of thermal expansion as SiSocon may be used and bonded by anodic bonding.
そして、第２図及び第５図に示すように７リツプチツプ
エ程によりシリコン基板３上にピエゾ抵抗１苦４と電気
的に接続され所定高さを有する４つのノリツブチップバ
ンプ９を形成する。同時に、シリコン基板３の外周部に
二重の環状の所定高さを有するフリップチップリング１
０を形成する。尚、フリップチップバンプ９及びフリッ
プチップリング１０は例えばＡＩ配線層上にＴｉ、Ｎｉ
層を形成し、メツキにて所定の高さのＱｕの柱状部を形
成し、ハンダ層をそのまわりに形成することにより形成
される。Then, as shown in FIGS. 2 and 5, four knob chip bumps 9 having a predetermined height and electrically connected to the piezoresistors 1 and 4 are formed on the silicon substrate 3 by seven lip chipping steps. At the same time, a flip chip ring 1 having a double annular shape and a predetermined height is attached to the outer periphery of the silicon substrate 3.
form 0. Incidentally, the flip chip bump 9 and the flip chip ring 10 are made of Ti, Ni, etc. on the AI wiring layer, for example.
It is formed by forming a layer, plating to form a Qu columnar portion of a predetermined height, and forming a solder layer around it.
次に、第２図及び第６図に示すように半導体加速度セン
サの可動部を形成するために前記第２の凹部７ａに連通
する環状の第３の凹部１１ａを形成するとともに、４つ
の梁部１２を除き第２の凹部７ｂに連通ずる第３の凹部
１１ｂを形成する。Next, as shown in FIGS. 2 and 6, an annular third recess 11a communicating with the second recess 7a is formed to form a movable part of the semiconductor acceleration sensor, and four beam parts are formed. 12, a third recess 11b communicating with the second recess 7b is formed.
その結果、重り部１３、重り支持部６、ピエゾ抵抗を有
する梁部１２及びそれらの周辺部にストッパ部１４が形
成される。As a result, stopper portions 14 are formed in the weight portion 13, the weight support portion 6, the beam portion 12 having piezoresistance, and their peripheral portions.
一方、第７図に示すように基台となるシリコン基板１５
に半導体素子、コンタクト、配線層等を有するＩＣ回路
部（図示略）を形成するとともに、電気特性等の調整用
のトリミング抵抗１６、外部取り出し配線層１７、外部
取り出し電極部１８を形成する。さらに、シリコン基板
１５上に第２のフリップチップバンプ１９、第２のフリ
ップチップリング２０を形成する。この第２のフリップ
チップバンプ１９及び第２のフリップチップリング２０
の位置は、第２図及び第６図に示すセンリーチツブのフ
リップチップバンプ９及びフリップチップリング１０に
対応する位置となっている。On the other hand, as shown in FIG.
An IC circuit section (not shown) having semiconductor elements, contacts, wiring layers, etc. is formed therein, and a trimming resistor 16 for adjusting electrical characteristics, an external wiring layer 17, and an external extraction electrode section 18 are formed. Further, a second flip chip bump 19 and a second flip chip ring 20 are formed on the silicon substrate 15. This second flip chip bump 19 and second flip chip ring 20
The position corresponds to the flip chip bump 9 and flip chip ring 10 of the sentry tube shown in FIGS. 2 and 6.
そして、第６図に示すセンリーチツブと第７図で示すシ
リコン基板１５をハンダを介して接合することにより第
１図に示すように、半導体加速度センサの製造が完了す
る。その結果、フリップチップバンプ９と第２のフリッ
プチップバンプ１９とが接合され、ピエゾ抵抗層４とシ
リコン基板１５側に設けたＩＣ回路とが電気的に接続さ
れる。又、フリップチップリング１０と第２のフリップ
チップリング２０と序接合され、そのフリップチップリ
ング１０．２０の内側においては気密封止された状態と
なる。Then, by joining the sensor chip shown in FIG. 6 and the silicon substrate 15 shown in FIG. 7 through solder, the manufacture of the semiconductor acceleration sensor is completed as shown in FIG. 1. As a result, the flip chip bump 9 and the second flip chip bump 19 are bonded together, and the piezoresistive layer 4 and the IC circuit provided on the silicon substrate 15 side are electrically connected. Further, the flip chip ring 10 and the second flip chip ring 20 are joined together, and the inside of the flip chip ring 10.20 is hermetically sealed.
このように製造された加速度センサにおいては、可動部
（梁部１２２重り部１３〉の加速度（振動〉による上下
方向の動きに対してはシリコン基板８及びシリコン基板
１５が、又、重り支持部６の捩じれ等に伴う左右及び前
後方向の動きに対してはストッパ部１４がス１〜ツバと
して動く。即ち、可動部の司動範囲が、エツチングによ
る第１の凹部５の深さ１１、第２の凹部７ａ及び第３の
凹部１１ａの幅部１２、及びフリップチップバンプ９．
１９及びフリップチップリング１０．２０（特に、メツ
キで形成したＣＤの柱状部）の高さで規定される距離１
３により決定される。つまり、上下方向に対しては距離
、ｌ！１．ｕ３が、又、左右及び前後方向に対しては距
離Ｂ２を任意に設定することができる。又、本実施例に
おいては対向するフリップチップバンプ等の両方にメツ
キで形成したＣＵの柱状部で形成される距離１３を設定
したが、片方のみにＣｕの柱状部を形成してもよい。さ
らに、本実施例ではハンダ接続によるフリップチップバ
ンプで説明したが、熱圧着等による他のバンプ構造でも
可能である。In the acceleration sensor manufactured in this way, the silicon substrate 8 and the silicon substrate 15 act against the vertical movement due to acceleration (vibration) of the movable part (beam part 122 weight part 13), and the weight support part 6 The stopper part 14 moves as a stopper part 1 to a collar in response to movements in the left-right and front-rear directions due to twisting, etc. In other words, the driving range of the movable part is the depth 11 of the first recess 5 due to etching, the second width portion 12 of the recess 7a and the third recess 11a, and the flip chip bump 9.
19 and the distance 1 defined by the height of the flip chip ring 10.20 (especially the columnar part of the CD formed by plating)
3. In other words, in the vertical direction, the distance is l! 1. u3, and distance B2 can be arbitrarily set in the left-right and front-back directions. Further, in this embodiment, the distance 13 is set by the columnar portions of CU formed by plating on both of the opposing flip chip bumps, etc., but the columnar portions of Cu may be formed on only one side. Furthermore, although this embodiment has been described using a flip-chip bump formed by solder connection, other bump structures formed by thermocompression bonding or the like may also be used.
加速度検出時においては、同センサに加速度（振動）が
加わるとその加速度にてピエゾ抵抗層４のピエゾ効果に
より印加された加速度の大きさに応じた信号が７リツプ
チツプバンプ９，１９を介してシリコン基板１５のＩＣ
回路に送られ、この回路にて増輻等の信３処理が行なわ
れ、外部取出し電極部１８から外部に出力される。又、
半導体加速度センサに過大な加速度（振動〉が印り口さ
れた場合には、可動部（梁部１２２重り部１３）に対し
上下、左右、前後方向においてストッパが機能してその
破壊が防止される。During acceleration detection, when acceleration (vibration) is applied to the sensor, a signal corresponding to the magnitude of the applied acceleration is transmitted via the seven lip chip bumps 9 and 19 due to the piezo effect of the piezo resistance layer 4. IC on silicon substrate 15
The signal is sent to a circuit, where it undergoes signal 3 processing such as amplification, and is output to the outside from the external electrode section 18. or,
When excessive acceleration (vibration) is applied to the semiconductor acceleration sensor, stoppers function in the vertical, horizontal, and longitudinal directions for the movable part (beam part 122 weight part 13) to prevent its destruction. .
このように本実施例においては、半導体チップの片面に
おいてピエゾ抵抗層４を有する梁部１２と重り部１３と
からなる可動部を形成し、この半導体チップの可動部が
シリコン基板１５（基台）に対向する状態で所定高さの
フリップチップバンプ９，１９を介して半導体チップを
シリコン基板１５上にボンディングし、シリコン基板１
５を過大な加速度が加わった際の可動部のストッパとし
た。その結果、フリップチップバンプ９，１９にて電極
の取り出しができるとともにシリコン基板１５をストッ
パとして使用でき、さらにフリップチップバンプ９，１
９の高さを調整することにより可動部（５Ａ部１２２重
り部１３）とシリコン基板１５との距ｆｉＮ３を最適設
ｆｆｔ ′ｇることかできる。As described above, in this embodiment, a movable part consisting of the beam part 12 having the piezoresistive layer 4 and the weight part 13 is formed on one side of the semiconductor chip, and the movable part of the semiconductor chip is the silicon substrate 15 (base). A semiconductor chip is bonded onto the silicon substrate 15 through flip chip bumps 9 and 19 of a predetermined height while facing the silicon substrate 1.
5 was used as a stopper for the movable part when excessive acceleration is applied. As a result, the electrodes can be taken out at the flip chip bumps 9, 19, and the silicon substrate 15 can be used as a stopper.
By adjusting the height of 9, the distance fiN3 between the movable part (5A part 122 weight part 13) and the silicon substrate 15 can be optimally set.
よって、ワイヤーボンディングのワイヤの接触等を回避
するとともに、過大な加速度が加わった時に容易に可動
部の破壊を防止することができることとなる。又、フリ
ップチップリング１０．２０によりチップの確実な支持
ができるとともに気密封止ができる。さらに、可動部の
外周部にストッパ部１４を距離１２だけ離間して配置し
たので、重り支持部６の捩じれ等に伴う左右方向及び前
後方向の動きに対してはストッパ部１４がストッパとし
て機能する。Therefore, it is possible to avoid contact with the wires of wire bonding, and to easily prevent destruction of the movable part when excessive acceleration is applied. Additionally, the flip chip rings 10 and 20 provide reliable support for the chip and also provide hermetic sealing. Furthermore, since the stopper part 14 is arranged at a distance of 12 on the outer periphery of the movable part, the stopper part 14 functions as a stopper against movement in the left-right direction and front-rear direction due to twisting of the weight support part 6, etc. .
尚、この発明は上記実施例に限定されるものではなく、
例えば、第８図及び第９図（第８図のＢ−Ｂ断面）に示
ダ−ように、いわゆるハイブリッドＩＣに用いられるア
ルミナ基板２１に厚膜印刷やｓｍ層により導体樗を形成
するとともに、シリコン基板２３にＩＣ回路２２等を形
成し、これらの基板２１．２３を上記実施例と同様に配
置してもよい。この際に、熱膨張係数をシリコンと同等
な基板材料（例えば、アビ１〜日ン（商標名）等）を用
いれば広い温度範囲にわたって使用することもできる。Note that this invention is not limited to the above embodiments,
For example, as shown in FIGS. 8 and 9 (B-B cross section in FIG. 8), a conductor is formed on an alumina substrate 21 used in a so-called hybrid IC by thick film printing or an SM layer, and The IC circuit 22 and the like may be formed on the silicon substrate 23, and these substrates 21 and 23 may be arranged in the same manner as in the above embodiment. In this case, if a substrate material having a coefficient of thermal expansion equivalent to that of silicon (for example, Abi 1-Sun (trade name), etc.) is used, it can be used over a wide temperature range.
さらに、第１０図、第１１図（第１０図のＣ−Ｃ断面）
に示すように、外周部のノリツブチップリング２５ａ、
２５ｂを４つに分割したものとし、当該センサがオイル
中に配置される。そして、各フリップチップリング２５
ａ、２５ｂ間の隙間及び基台２６に設けた連通孔２７を
介してオイルを出入りさせてダンプ機能をもたせてもよ
い。尚、この実施例では、重り部１３に対し平行な梁部
２４が２組形成されている。Furthermore, Figures 10 and 11 (C-C cross section in Figure 10)
As shown in FIG.
25b is divided into four parts, and the sensor is placed in oil. And each flip chip ring 25
A dumping function may be provided by allowing oil to enter and exit through the gap between a and 25b and through a communication hole 27 provided in the base 26. In this embodiment, two sets of beam parts 24 are formed parallel to the weight part 13.
さらには、第１２図、第１３図（第１２図のＤ−Ｄ断面
）に示すように、梁部２８を１つとしく即ち、片持ら梁
とし）、外周部のフリップデツプバンプ２９ａ、２９ｂ
にピエゾ抵抗層４の電気接続機能とチップ支持機能をも
たせてもよい。Furthermore, as shown in FIGS. 12 and 13 (D-D cross section in FIG. 12), the beam portion 28 is made into one (ie, cantilevered beam), and the flip depth bump 29a on the outer periphery, 29b
The piezoresistive layer 4 may have an electrical connection function and a chip support function.
［発明の効果］
以上詳述したようにこの発明によれば、ワイヤーボンデ
ィングのワイヤの接触等を回避するとともに、過大な加
速度が加わった時に容易に可動部の破壊を防止すること
ができる優れた効果を発揮する。[Effects of the Invention] As detailed above, according to the present invention, it is possible to avoid contact between wires in wire bonding, and to easily prevent breakage of movable parts when excessive acceleration is applied. be effective.
第１図は本実施例の半導体加速度センサの断面図、第２
図は第１図のＡ−Ａ断面図、第３図は半導体加速度セン
サの製造工程を説明するための断面図、第４図は半導体
加速度センソーの製造工程を説明するための断面図、第
５図は半導体加速度センサの製造工程を説明するための
断面図、第６図は半導体加速度センソーの製造工程を説
明するための断面図、第７図は半導体１１ＪＯ速度セン
サの製造工程を説明するための断面図、第８図は別例の
半導体加速度センサの断面図、第９図【よ第８図のＢ−
Ｂ断面図、第１０図は他の別例の半導体加速度センサの
断面図、第１１図は第１０図のＣ−Ｃ断面図、第１２図
は他の別例の半導体加速度センサの断面図、第１３図は
第１２図のＤ−Ｄ断面図である。
４はピエゾ抵抗層、９はフリップデツプバンプ、１２は
梁部、１３は重り部、１５は基台としてのシリコン基板
。Figure 1 is a cross-sectional view of the semiconductor acceleration sensor of this embodiment, Figure 2
The figures are a sectional view taken along the line A-A in FIG. 1, FIG. 3 is a sectional view for explaining the manufacturing process of a semiconductor acceleration sensor, FIG. The figure is a cross-sectional view for explaining the manufacturing process of a semiconductor acceleration sensor, FIG. 6 is a cross-sectional view for explaining the manufacturing process of a semiconductor acceleration sensor, and FIG. 7 is a cross-sectional view for explaining the manufacturing process of a semiconductor 11JO speed sensor. 8 is a sectional view of another example of a semiconductor acceleration sensor, and FIG. 9 is a cross-sectional view of another example of a semiconductor acceleration sensor.
B sectional view, FIG. 10 is a sectional view of another example of the semiconductor acceleration sensor, FIG. 11 is a sectional view taken along the line CC in FIG. 10, and FIG. 12 is a sectional view of another example of the semiconductor acceleration sensor. FIG. 13 is a sectional view taken along line DD in FIG. 12. 4 is a piezoresistive layer, 9 is a flip dip bump, 12 is a beam portion, 13 is a weight portion, and 15 is a silicon substrate as a base.
Claims (1)
部と重り部とからなる可動部を形成し、この半導体チッ
プの可動部が基台に対向する状態で所定高さのバンプを
介して当該半導体チップを基台上にボンディングし、前
記基台を過大な加速度が加わつた際の前記可動部のスト
ッパとしてなる半導体加速度センサ。1. A movable part consisting of a beam part having piezoresistance and a weight part is formed on one side of the semiconductor chip, and the semiconductor chip is moved through a bump of a predetermined height with the movable part of the semiconductor chip facing the base. is bonded onto a base, and the semiconductor acceleration sensor serves as a stopper for the movable part when excessive acceleration is applied to the base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1204187A JP2730201B2 (en) | 1989-08-07 | 1989-08-07 | Semiconductor acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1204187A JP2730201B2 (en) | 1989-08-07 | 1989-08-07 | Semiconductor acceleration sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0367177A true JPH0367177A (en) | 1991-03-22 |
| JP2730201B2 JP2730201B2 (en) | 1998-03-25 |
Family
ID=16486277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1204187A Expired - Lifetime JP2730201B2 (en) | 1989-08-07 | 1989-08-07 | Semiconductor acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2730201B2 (en) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0526901A (en) * | 1991-07-19 | 1993-02-05 | Fujikura Ltd | Semiconductor acceleration sensor |
| JP2003521184A (en) * | 2000-01-27 | 2003-07-08 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Electroacoustic transducer having a moving coil and an elastic holding element for the connecting lead of the moving coil |
| DE19616014B4 (en) * | 1996-04-23 | 2006-04-20 | Robert Bosch Gmbh | Method for producing semiconductor devices having micromechanical structures |
| WO2006049004A1 (en) * | 2004-11-08 | 2006-05-11 | Hitachi Metals, Ltd. | Acceleration sensor |
| JP2006189418A (en) * | 2004-12-06 | 2006-07-20 | Denso Corp | Sensor device |
| JP2007155374A (en) * | 2005-12-01 | 2007-06-21 | Oki Electric Ind Co Ltd | Semiconductor acceleration sensor and its manufacturing method |
| JP2008244317A (en) * | 2007-03-28 | 2008-10-09 | Oki Electric Ind Co Ltd | Semiconductor apparatus |
| WO2008126409A1 (en) * | 2007-04-10 | 2008-10-23 | Panasonic Corporation | Acceleration sensor and method for manufacturing the same |
| WO2009044522A1 (en) * | 2007-10-01 | 2009-04-09 | Panasonic Corporation | Inertia sensor |
| US7674638B2 (en) | 2005-11-25 | 2010-03-09 | Panasonic Electric Works Co., Ltd. | Sensor device and production method therefor |
| US8067769B2 (en) * | 2005-11-25 | 2011-11-29 | Panasonic Electric Works Co., Ltd. | Wafer level package structure, and sensor device obtained from the same package structure |
| US8080869B2 (en) | 2005-11-25 | 2011-12-20 | Panasonic Electric Works Co., Ltd. | Wafer level package structure and production method therefor |
| US8089144B2 (en) | 2008-12-17 | 2012-01-03 | Denso Corporation | Semiconductor device and method for manufacturing the same |
| US8156804B2 (en) | 2006-10-18 | 2012-04-17 | Denso Corporation | Capacitive semiconductor sensor |
| US8269290B2 (en) | 2008-09-15 | 2012-09-18 | Denso Corporation | Semiconductor device including a plurality of semiconductor substrates and method of manufacturing the same |
| US8519493B2 (en) | 2003-03-27 | 2013-08-27 | Denso Corporation | Semiconductor device having multiple substrates |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5068362B2 (en) * | 2010-11-10 | 2012-11-07 | ラピスセミコンダクタ株式会社 | Mounting structure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0212663U (en) * | 1988-07-06 | 1990-01-26 |
-
1989
- 1989-08-07 JP JP1204187A patent/JP2730201B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0212663U (en) * | 1988-07-06 | 1990-01-26 |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2507840B2 (en) * | 1991-07-19 | 1996-06-19 | 株式会社フジクラ | Semiconductor acceleration sensor |
| JPH0526901A (en) * | 1991-07-19 | 1993-02-05 | Fujikura Ltd | Semiconductor acceleration sensor |
| DE19616014B4 (en) * | 1996-04-23 | 2006-04-20 | Robert Bosch Gmbh | Method for producing semiconductor devices having micromechanical structures |
| JP2003521184A (en) * | 2000-01-27 | 2003-07-08 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Electroacoustic transducer having a moving coil and an elastic holding element for the connecting lead of the moving coil |
| US8519493B2 (en) | 2003-03-27 | 2013-08-27 | Denso Corporation | Semiconductor device having multiple substrates |
| KR100906573B1 (en) * | 2004-11-08 | 2009-07-10 | 히타치 긴조쿠 가부시키가이샤 | Acceleration sensor |
| WO2006049004A1 (en) * | 2004-11-08 | 2006-05-11 | Hitachi Metals, Ltd. | Acceleration sensor |
| US7716984B2 (en) | 2004-11-08 | 2010-05-18 | Hitachi Metal Ltd. | Acceleration sensor device having piezo-resistors measuring acceleration |
| JP2006189418A (en) * | 2004-12-06 | 2006-07-20 | Denso Corp | Sensor device |
| US7674638B2 (en) | 2005-11-25 | 2010-03-09 | Panasonic Electric Works Co., Ltd. | Sensor device and production method therefor |
| US8067769B2 (en) * | 2005-11-25 | 2011-11-29 | Panasonic Electric Works Co., Ltd. | Wafer level package structure, and sensor device obtained from the same package structure |
| US8080869B2 (en) | 2005-11-25 | 2011-12-20 | Panasonic Electric Works Co., Ltd. | Wafer level package structure and production method therefor |
| JP2007155374A (en) * | 2005-12-01 | 2007-06-21 | Oki Electric Ind Co Ltd | Semiconductor acceleration sensor and its manufacturing method |
| US8156804B2 (en) | 2006-10-18 | 2012-04-17 | Denso Corporation | Capacitive semiconductor sensor |
| JP2008244317A (en) * | 2007-03-28 | 2008-10-09 | Oki Electric Ind Co Ltd | Semiconductor apparatus |
| WO2008126409A1 (en) * | 2007-04-10 | 2008-10-23 | Panasonic Corporation | Acceleration sensor and method for manufacturing the same |
| WO2009044522A1 (en) * | 2007-10-01 | 2009-04-09 | Panasonic Corporation | Inertia sensor |
| US8269290B2 (en) | 2008-09-15 | 2012-09-18 | Denso Corporation | Semiconductor device including a plurality of semiconductor substrates and method of manufacturing the same |
| US8089144B2 (en) | 2008-12-17 | 2012-01-03 | Denso Corporation | Semiconductor device and method for manufacturing the same |
| US8169082B2 (en) | 2008-12-17 | 2012-05-01 | Denso Corporation | Semiconductor device and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2730201B2 (en) | 1998-03-25 |
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