JP2730201B2 - Semiconductor acceleration sensor - Google Patents
Semiconductor acceleration sensorInfo
- Publication number
- JP2730201B2 JP2730201B2 JP1204187A JP20418789A JP2730201B2 JP 2730201 B2 JP2730201 B2 JP 2730201B2 JP 1204187 A JP1204187 A JP 1204187A JP 20418789 A JP20418789 A JP 20418789A JP 2730201 B2 JP2730201 B2 JP 2730201B2
- Authority
- JP
- Japan
- Prior art keywords
- acceleration sensor
- semiconductor
- silicon substrate
- base
- flip chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ この発明は、半導体加速度（振動）センサに関するも
のである。Description: TECHNICAL FIELD The present invention relates to a semiconductor acceleration (vibration) sensor.
［従来技術及び課題］ 従来、半導体加速度センサの感度を上げるために周辺
部のシリコンを重りとして使用しているものがあるが、
電気的な接続を取るためのワイヤーボンデイングの線が
長くなってしまい、大きな加速度を検出する時にワイヤ
が垂れ下がり接触したり切れたりする場合がある。又、
重りを大きくした加速度センサでは過大な加速度が加わ
った時に梁部が破壊するためにオイル中に入れてダンプ
させる等の対策を施していたが設計の自由度が低く、又
コストのかかるものになっている。[Prior art and problems] Conventionally, there is a device that uses silicon in a peripheral portion as a weight in order to increase the sensitivity of a semiconductor acceleration sensor.
The wire of the wire bonding for making the electrical connection becomes long, and the wire may hang down and come into contact or break when detecting a large acceleration. or,
In the case of an acceleration sensor with a large weight, the beam was broken when excessive acceleration was applied, so measures such as dumping in oil were taken.However, the degree of freedom in design was low and the cost was high. ing.
この発明の目的は、ワイヤーボンデイングのワイヤの
接触等を回避するとともに、過大な加速度が加わった時
に容易に可動部の破壊を防止することができる半導体加
速度センサを提供することである。An object of the present invention is to provide a semiconductor acceleration sensor capable of avoiding contact of a wire of a wire bonding or the like and easily preventing breakage of a movable portion when an excessive acceleration is applied.
［課題を解決するための手段］ 上記の目的を達成するために、請求項１の発明は、梁
部と重り部とからなる可動部と、前記重り部に囲まれた
重り支持部とを有する半導体チップと、基台とを有し、
前記半導体チップの前記重り支持部と前記基台とが所定
高さを有するバンプを介して接合され、前記基台を過大
な加速度が加わった際の前記可動部のストッパとしてな
る半導体加速度センサを要旨とするものである。Means for Solving the Problems In order to achieve the above object, the invention according to claim 1 includes a movable portion including a beam portion and a weight portion, and a weight support portion surrounded by the weight portion. Having a semiconductor chip and a base,
A semiconductor acceleration sensor in which the weight support portion of the semiconductor chip and the base are joined via a bump having a predetermined height, and the base serves as a stopper for the movable portion when excessive acceleration is applied. It is assumed that.
請求項２の発明は、請求項１において、前記バンプ
は、前記半導体チップ側および前記基台側の両方に設け
られた各々のバンプが接合されることで、前記所定高さ
を得るようにした半導体加速度センサを要旨とするもの
である。According to a second aspect of the present invention, in the first aspect, the bump has the predetermined height by joining respective bumps provided on both the semiconductor chip side and the base side. The gist is a semiconductor acceleration sensor.
請求項３の発明は、請求項１あるいは２において、前
記基台には、信号処理回路が形成され、前記可動部の変
位に基づく検出信号が前記バンプを介して前記信号処理
回路に入力されるものである半導体加速度センサを要旨
とするものである。According to a third aspect of the present invention, in the first or second aspect, a signal processing circuit is formed on the base, and a detection signal based on the displacement of the movable portion is input to the signal processing circuit via the bump. The gist of the present invention is a semiconductor acceleration sensor.
［作用］ 請求項１に記載の発明によれば、バンプにて電極の取
出しができるとともに、重りの重量を大きくでき、過大
な加速度が加わった際に、基台が半導体チップの可動部
のストッパとして働く。[Operation] According to the first aspect of the present invention, the electrodes can be taken out by the bumps, the weight of the weight can be increased, and when an excessive acceleration is applied, the base becomes the stopper of the movable portion of the semiconductor chip. Work as
請求項２に記載の発明によれば、半導体チップ側およ
び前記基台側の両方に設けられた各々のバンプを接合す
ることで、所定高さを得る。According to the second aspect of the present invention, the predetermined height is obtained by joining the respective bumps provided on both the semiconductor chip side and the base side.
請求項３に記載の発明によれば、バンプを介して基台
に設けた信号処理回路に検出信号を入力する。According to the third aspect of the present invention, the detection signal is input to the signal processing circuit provided on the base via the bump.
［実施例］ 以下、この発明を具体化した一実施例を図面に従って
説明する。Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
第１図には本実施例の半導体加速度センサの断面を示
し、第２図には第１図におけるＡ−Ａ断面を示す。さら
に、第３〜第７図にはその製造工程を示す。FIG. 1 shows a cross section of the semiconductor acceleration sensor of the present embodiment, and FIG. 2 shows a cross section taken along line AA in FIG. 3 to 7 show the manufacturing steps.
第３図において、例えば、Ｎ型で５〜20Ω・cmの（10
0）シリコン基板１に熱酸化膜２を0.1〜１μｍ形成す
る。このシリコン基板１に対しもう１枚の同様なＮ型シ
リコン基板３を、いわゆるウェハ直接接合で800〜1100
℃で１時間程度の熱処理により接合し、さらに、Ｎ型シ
リコン基板３を必要な厚さに鏡面研磨する。そして、所
定領域にボロン不純物を、例えばイオン注入で導入しP+
ピエゾ抵抗層４を第２図に示すように合計16個形成す
る。さらに、必要ならば半導体素子を形成し、IC回路部
等をＮ型シリコン基板３内に形成し、アルミ等での配線
層を形成する。尚、第３図において、3aは熱酸化膜であ
る。In FIG. 3, for example, an N-type (5 to 20 Ω · cm (10
0) A thermal oxide film 2 is formed on a silicon substrate 1 to a thickness of 0.1 to 1 μm. Another similar N-type silicon substrate 3 is bonded to the silicon substrate 1 by so-called wafer direct bonding for 800 to 1100.
The bonding is performed by a heat treatment at about 1 hour for about 1 hour, and the N-type silicon substrate 3 is mirror-polished to a required thickness. Then, a boron impurity is introduced into a predetermined region, for example, by ion implantation, and P +
A total of 16 piezoresistive layers 4 are formed as shown in FIG. Further, if necessary, a semiconductor element is formed, an IC circuit portion and the like are formed in the N-type silicon substrate 3, and a wiring layer made of aluminum or the like is formed. In FIG. 3, reference numeral 3a denotes a thermal oxide film.
次に、シリコン基板１にエッチングにて所定の深さの
第１の凹部５を中央の重り支持部６を除き環状に形成す
る。このエッチングの際に、KOH等のアルカリエッチン
グ液又は弗硝酸系のエッチング液が使用される。その結
果、第３図に示すようになる。Next, a first concave portion 5 having a predetermined depth is formed in the silicon substrate 1 in an annular shape except for the center weight support portion 6 by etching. At the time of this etching, an alkali etching solution such as KOH or a hydrofluoric acid-based etching solution is used. As a result, the result is as shown in FIG.
引き続き、第４図に示すように、第１の凹部５内での
シリコン基板１にエッチングにて熱酸化膜２に至る環状
の第２の凹部7aと、重り支持部６を除き環状の第２の凹
部7bを形成する。この場合、エッチングは熱酸化膜２に
おいて自動的に停止させることができる。Subsequently, as shown in FIG. 4, an annular second concave portion 7a reaching the thermal oxide film 2 by etching the silicon substrate 1 in the first concave portion 5, and an annular second concave portion except for the weight support portion 6. Is formed. In this case, the etching can be automatically stopped at the thermal oxide film 2.
続いて、第５図に示すように、シリコン基板８上に前
記シリコン基板１を配置し、両者1,8を400〜450℃の低
温でのウェハ直接接合で接合する。この際、シリコン基
板８の代りに、シリコンと熱膨張係数がほぼ等しいパイ
レックスガラス（商標名）を用い、陽極接合で接合して
もよい。そして、第２図及び第５図に示すようにフリッ
プチップ工程によりシリコン基板３上にピエゾ抵抗層４
と電気的に接続され所定高さを有する４つのフリップチ
ップバンプ９を形成する。同時に、シリコン基板３の外
周部に二重の環状の所定高さを有するフリップチップリ
ング10を形成する。尚、フリップチップバンプ９及びフ
リップチップリング10は例えばAl配線層上にTi,Ni層を
形成し、メッキにて所定の高さのCuの柱状部を形成し、
ハンダ層をそのまわりに形成することにより形成され
る。Subsequently, as shown in FIG. 5, the silicon substrate 1 is placed on a silicon substrate 8, and the two are bonded by direct wafer bonding at a low temperature of 400 to 450 ° C. At this time, instead of the silicon substrate 8, Pyrex glass (trade name) having substantially the same thermal expansion coefficient as silicon may be used and bonded by anodic bonding. Then, as shown in FIGS. 2 and 5, a piezoresistive layer 4 is formed on the silicon substrate 3 by a flip chip process.
Are formed and four flip chip bumps 9 having a predetermined height are formed. At the same time, a double annular flip chip ring 10 having a predetermined height is formed on the outer peripheral portion of the silicon substrate 3. Incidentally, the flip chip bump 9 and the flip chip ring 10 are formed, for example, by forming a Ti, Ni layer on an Al wiring layer, and forming a Cu columnar portion of a predetermined height by plating,
It is formed by forming a solder layer around it.
次に、第２図及び第６図に示すように半導体加速度セ
ンサの可動部を形成するために前記第２の凹部7aに連通
する環状の第３の凹部11aを形成するとともに、４つの
梁部12を除き第２の凹部7bに連通する第３の凹部11bを
形成する。その結果、重り部13、重り支持部６、ピエゾ
抵抗を有する梁部12及びそれらの周辺部にストッパ14が
形成される。Next, as shown in FIGS. 2 and 6, an annular third concave portion 11a communicating with the second concave portion 7a is formed to form a movable portion of the semiconductor acceleration sensor. Except for 12, a third recess 11b communicating with the second recess 7b is formed. As a result, a stopper 14 is formed at the weight portion 13, the weight support portion 6, the beam portion 12 having piezoresistance, and the peripheral portion thereof.
一方、第７図に示すように基台となるシリコン基板15
に半導体素子、コンタクト、配線層等を有するIC回路部
（図示略）を形成するとともに、電気特性等の調整用の
トリミング抵抗16、外部取り出し配線層17、外部取り出
し電極部18を形成する。さらに、シリコン基板15上に第
２のフリップチップバンプ19、第２のフリップチップリ
ング20を形成する。この第２のフリップチップバンプ19
及び第２のフリップチップリング20の位置は、第２図及
び第６図に示すセンサチップのフリップチップバンプ９
及びフリップチップリング10に対応する位置となってい
る。On the other hand, as shown in FIG.
Next, an IC circuit portion (not shown) having a semiconductor element, a contact, a wiring layer, and the like is formed, and a trimming resistor 16 for adjusting electric characteristics and the like, an external extraction wiring layer 17, and an external extraction electrode portion 18 are formed. Further, a second flip chip bump 19 and a second flip chip ring 20 are formed on the silicon substrate 15. This second flip chip bump 19
The position of the second flip chip ring 20 corresponds to the position of the flip chip bump 9 of the sensor chip shown in FIG. 2 and FIG.
And the position corresponding to the flip chip ring 10.
そして、第６図に示すセンサチップと第７図で示すシ
リコン基板15をハンダを介して接合することにより第１
図に示すように、半導体加速度センサの製造が完了す
る。その結果、フリップチップバンプ９と第２のフリッ
プチップバンプ19とが接合され、ピエゾ抵抗層４とシリ
コン基板15側に設けたIC回路とが電気的に接続される。
又、フリップチップリングと第２のフリップチップリン
グ20とが接合され、そのフリップチップリング10,20の
内側においては気密封止された状態となる。Then, the sensor chip shown in FIG. 6 and the silicon substrate 15 shown in FIG.
As shown in the figure, the manufacture of the semiconductor acceleration sensor is completed. As a result, the flip chip bump 9 and the second flip chip bump 19 are joined, and the piezoresistive layer 4 and the IC circuit provided on the silicon substrate 15 side are electrically connected.
In addition, the flip chip ring and the second flip chip ring 20 are joined, and the inside of the flip chip rings 10 and 20 is in a hermetically sealed state.
このように製造された加速度センサにおいては、可動
部（梁部12,重り部13）の加速度（振動）による上下方
向の動きに対してはシリコン基板８及びシリコン基板15
が、又、重り支持部６の捩じれ等に伴う左右及び前後方
向の動きに対してはストッパ部14がストッパとして働
く。即ち、可動部の可動範囲が、エッチングによる第１
の凹部５の深さl1、第２の凹部7a及び第３の凹部11aの
幅l2、及びフリップチップバンプ9,19及びフリップチッ
プリング10,20（特に、メッキで形成したCuの柱状部）
の高さで規定される距離l3により決定される。つまり、
上下方向に対しては距離l1,l3が、又、左右及び前後方
向に対しては距離l2を任意に設定することができる。
又、本実施例においては対向するフリップチップバンプ
等の両方にメッキで形成したCuの柱状部で形成される距
離l3を設定したが、片方のみにCuの柱状部を形成しても
よい。さらに、本実施例ではハンダ接続によるフリップ
チップバンプで説明したが、熱圧着等による他のバンプ
構造でも可能ある。In the acceleration sensor manufactured in this manner, the silicon substrate 8 and the silicon substrate 15 do not move up and down due to the acceleration (vibration) of the movable portion (the beam portion 12 and the weight portion 13).
However, the stopper portion 14 acts as a stopper against the movement in the left-right and front-rear directions due to the torsion of the weight support portion 6 or the like. That is, the movable range of the movable portion is the first range by the etching.
Of the concave portion 5, the width l2 of the second concave portion 7a and the third concave portion 11a, and the flip chip bumps 9, 19 and the flip chip rings 10, 20 (particularly, Cu columnar portions formed by plating).
Is determined by the distance l3 defined by the height of That is,
The distances l1 and l3 can be set arbitrarily in the up-down direction, and the distance l2 can be set arbitrarily in the left-right and front-back directions.
Further, in this embodiment, the distance l3 formed by the Cu columnar portion formed by plating is set on both of the opposing flip chip bumps and the like, but the Cu columnar portion may be formed only on one side. Furthermore, although the present embodiment has been described with the flip-chip bumps connected by soldering, other bump structures formed by thermocompression bonding or the like are also possible.
加速度検出時においては、同センサに加速度（振動）
が加わるとその加速度にてピエゾ抵抗層４のピエゾ効果
により印加された加速度の大きさに応じた信号がフリッ
プチップバンプ9,19を介してシリコン基板15のIC回路に
送られ、この回路にて増幅等の信号処理が行なわれ、外
部取出し電極部18から外部に出力される。又、半導体加
速度センサに過大な加速度（振動）が印加された場合に
は、可動部（梁部12,重り部13）に対し上下、左右、前
後方向においてストッパが機能して破壊が防止される。When detecting acceleration, the sensor uses acceleration (vibration)
Is applied, a signal corresponding to the magnitude of the acceleration applied by the piezo effect of the piezoresistive layer 4 is sent to the IC circuit of the silicon substrate 15 via the flip chip bumps 9 and 19 at the acceleration, and this circuit Signal processing such as amplification is performed, and the signal is output from the external extraction electrode unit 18 to the outside. Also, when excessive acceleration (vibration) is applied to the semiconductor acceleration sensor, stoppers function in the up, down, left, right, front and rear directions with respect to the movable portion (beam portion 12, weight portion 13) to prevent destruction. .
このように本実施例においては、半導体チップの片面
においてピエゾ抵抗層４を有する梁部12と重り部13とか
らなる可動部を形成し、この半導体チップの可動部がシ
リコン基板15（基台）に対向する状態で所定高さのフリ
ップチップバンプ9,19を介して半導体チップをシリコン
基板15上にボンディングし、シリコン基板15を過大な加
速度が加わった際の可動部のストッパとした。その結
果、フリップチップパンプ9,19に電極の取り出しができ
るとともにシリコン基板15をストッパとして使用でき、
さらにフリップチップパンプ9,19の高さを調整すること
により可動部（梁部12,重り部13）とシリコン基板15と
の距離l3を最適設計することができる。よって、ワイヤ
ーボンデイングのワイヤの接触等を回避するとともに、
過大な加速度が加わった時に容易に可動部の破壊を防止
することができることとなる。又、フリップチップリン
グ10,20によりチップの確実な支持ができるとともに気
密封止ができる。さらに、可動部の外周部にストッパ部
14を距離l2だけ離間して配置したので、重り支持部６の
捩じれ等に伴う左右方向及び前後方向の動きに対しては
ストッパ部14がストッパとして機能する。As described above, in this embodiment, a movable portion including the beam portion 12 having the piezoresistive layer 4 and the weight portion 13 is formed on one surface of the semiconductor chip, and the movable portion of the semiconductor chip is formed on the silicon substrate 15 (base). The semiconductor chip was bonded to the silicon substrate 15 via flip chip bumps 9 and 19 of a predetermined height in a state facing the silicon substrate 15, and the silicon substrate 15 was used as a stopper for the movable portion when an excessive acceleration was applied. As a result, the electrodes can be taken out of the flip chip pumps 9 and 19 and the silicon substrate 15 can be used as a stopper,
Further, by adjusting the height of the flip chip pumps 9, 19, the distance l3 between the movable portion (the beam portion 12, the weight portion 13) and the silicon substrate 15 can be optimally designed. Therefore, while avoiding contact with the wire of the wire bonding,
When an excessive acceleration is applied, the movable portion can be easily prevented from being destroyed. In addition, the flip chip rings 10 and 20 can securely support the chip and hermetically seal it. Furthermore, a stopper is provided on the outer periphery of the movable part.
The stoppers 14 function as stoppers for the movement in the left-right direction and the front-rear direction due to the twisting of the weight support 6 and the like, because the distances 14 are arranged at a distance l2.
尚、この発明は上記実施例に限定されるものではな
く、例えば、第８図及び第９図（第８図のＢ−Ｂ断面）
に示すように、いわゆるハイブリッドICに用いられるア
ルミナ基板21に厚膜印刷や薄膜層により導体層を形成す
るとともに、シリコン基板23にIC回路22等を形成し、こ
れらの基板21,23を上記実施例と同様に配置してもよ
い。この際に、熱膨張係数をシリコンと同等な基板材料
（例えば、デビトロン（商標名）等）を用いれば広い温
度範囲にわたって使用することもできる。The present invention is not limited to the above-described embodiment. For example, FIG. 8 and FIG. 9 (cross section taken along the line BB in FIG. 8)
As shown in FIG. 5, a conductor layer is formed by thick-film printing or a thin-film layer on an alumina substrate 21 used for a so-called hybrid IC, and an IC circuit 22 and the like are formed on a silicon substrate 23. You may arrange | position like an example. At this time, if a substrate material having a thermal expansion coefficient equivalent to that of silicon (for example, Devitron (trade name) or the like) is used, it can be used over a wide temperature range.
［発明の効果］ 以上詳述したようにこの発明によれば、ワイヤーボン
デイングのワイヤの接触等を回避するとともに、過大な
加速度が加わった時に容易に可動部の破壊を防止するこ
とができ優れた効果を発揮する。[Effects of the Invention] As described above in detail, according to the present invention, it is possible to avoid the contact of the wire of the wire bonding and the like, and to easily prevent the movable portion from being broken when an excessive acceleration is applied. It is effective.
第１図は本実施例の半導体加速度センサの断面図、第２
図は第１図のＡ−Ａ断面図、第３図は半導体加速度セン
サの製造工程を説明するための断面図、第４図は半導体
加速度センサの製造工程を説明するための断面図、第５
図は半導体加速度センサの製造工程を説明するための断
面図、第６図は半導体加速度センサの製造工程を説明す
るための断面図、第７図は半導体加速度センサの製造工
程を説明するための断面図、第８図は別例の半導体加速
度センサの断面図、第９図は第８図のＢ−Ｂ断面図であ
る。 ４はピエゾ抵抗層、９はフリップチップバンプ、12は梁
部、13は重り部、15は基台としてのシリコン基板。FIG. 1 is a sectional view of a semiconductor acceleration sensor according to this embodiment, and FIG.
FIG. 3 is a cross-sectional view for explaining a manufacturing process of the semiconductor acceleration sensor. FIG. 4 is a cross-sectional view for explaining the manufacturing process of the semiconductor acceleration sensor.
FIG. 6 is a cross-sectional view for explaining a manufacturing process of the semiconductor acceleration sensor, FIG. 6 is a cross-sectional view for explaining a manufacturing process of the semiconductor acceleration sensor, and FIG. 7 is a cross-section for explaining a manufacturing process of the semiconductor acceleration sensor. FIG. 8 is a sectional view of another example of the semiconductor acceleration sensor, and FIG. 9 is a sectional view taken along line BB of FIG. 4 is a piezoresistive layer, 9 is a flip chip bump, 12 is a beam portion, 13 is a weight portion, and 15 is a silicon substrate as a base.
Claims (3)
り部に囲まれた重り支持部とを有する半導体チップと、
基台とを有し、 前記半導体チップの前記重り支持部と前記基台とが所定
高さを有するバンプを介して接合され、前記基台を過大
な加速度が加わった際の前記可動部のストッパとしてな
る半導体加速度センサ。A semiconductor chip having a movable portion including a beam portion and a weight portion, and a weight support portion surrounded by the weight portion;
A base, wherein the weight support portion of the semiconductor chip and the base are joined via a bump having a predetermined height, and a stopper of the movable portion when an excessive acceleration is applied to the base. Semiconductor acceleration sensor.
前記基台側の両方に設けられた各々のバンプが接合され
ることで、前記所定高さを得るようにした請求項１に記
載の半導体加速度センサ。2. The semiconductor according to claim 1, wherein the bumps are provided with the predetermined height by joining respective bumps provided on both the semiconductor chip side and the base side. Acceleration sensor.
前記可動部の変位に基づく検出信号が前記バンプを介し
て前記信号処理回路に入力されるものである請求項１あ
るいは２に記載の半導体加速度センサ。3. A signal processing circuit is formed on the base,
3. The semiconductor acceleration sensor according to claim 1, wherein a detection signal based on a displacement of the movable portion is input to the signal processing circuit via the bump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1204187A JP2730201B2 (en) | 1989-08-07 | 1989-08-07 | Semiconductor acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1204187A JP2730201B2 (en) | 1989-08-07 | 1989-08-07 | Semiconductor acceleration sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0367177A JPH0367177A (en) | 1991-03-22 |
| JP2730201B2 true JP2730201B2 (en) | 1998-03-25 |
Family
ID=16486277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1204187A Expired - Lifetime JP2730201B2 (en) | 1989-08-07 | 1989-08-07 | Semiconductor acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2730201B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011085591A (en) * | 2010-11-10 | 2011-04-28 | Oki Semiconductor Co Ltd | Mounting structure |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2507840B2 (en) * | 1991-07-19 | 1996-06-19 | 株式会社フジクラ | Semiconductor acceleration sensor |
| DE19616014B4 (en) * | 1996-04-23 | 2006-04-20 | Robert Bosch Gmbh | Method for producing semiconductor devices having micromechanical structures |
| JP4876292B2 (en) * | 2000-01-27 | 2012-02-15 | ノウルズ、エレクトロニクス、アジア、プライベート、リミテッド | Electroacoustic transducer having a moving coil and an elastic holding element for the connecting lead of the moving coil |
| JP4238724B2 (en) | 2003-03-27 | 2009-03-18 | 株式会社デンソー | Semiconductor device |
| JP4337099B2 (en) | 2004-11-08 | 2009-09-30 | 日立金属株式会社 | Acceleration sensor |
| JP4969822B2 (en) * | 2004-12-06 | 2012-07-04 | 株式会社デンソー | Sensor device |
| WO2007061047A1 (en) | 2005-11-25 | 2007-05-31 | Matsushita Electric Works, Ltd. | Wafer level package structure and method for manufacturing same |
| US7674638B2 (en) | 2005-11-25 | 2010-03-09 | Panasonic Electric Works Co., Ltd. | Sensor device and production method therefor |
| TW200733264A (en) * | 2005-11-25 | 2007-09-01 | Matsushita Electric Works Ltd | Method of producing wafer-level package structure |
| JP4949673B2 (en) * | 2005-12-01 | 2012-06-13 | ラピスセミコンダクタ株式会社 | Semiconductor acceleration sensor and manufacturing method thereof |
| JP2008101980A (en) | 2006-10-18 | 2008-05-01 | Denso Corp | Capacitance-type semiconductor sensor device |
| JP4933934B2 (en) * | 2007-03-28 | 2012-05-16 | ラピスセミコンダクタ株式会社 | Semiconductor device and manufacturing method of semiconductor device |
| WO2008126409A1 (en) * | 2007-04-10 | 2008-10-23 | Panasonic Corporation | Acceleration sensor and method for manufacturing the same |
| WO2009044522A1 (en) * | 2007-10-01 | 2009-04-09 | Panasonic Corporation | Inertia sensor |
| JP4766143B2 (en) | 2008-09-15 | 2011-09-07 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
| US8089144B2 (en) | 2008-12-17 | 2012-01-03 | Denso Corporation | Semiconductor device and method for manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0212663U (en) * | 1988-07-06 | 1990-01-26 |
-
1989
- 1989-08-07 JP JP1204187A patent/JP2730201B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011085591A (en) * | 2010-11-10 | 2011-04-28 | Oki Semiconductor Co Ltd | Mounting structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0367177A (en) | 1991-03-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2730201B2 (en) | Semiconductor acceleration sensor | |
| US8264051B2 (en) | Semiconductor device and manufacturing method of the same | |
| US6313529B1 (en) | Bump bonding and sealing a semiconductor device with solder | |
| US8089144B2 (en) | Semiconductor device and method for manufacturing the same | |
| JP4238724B2 (en) | Semiconductor device | |
| JP4732445B2 (en) | MEMS device with conductive path through substrate | |
| TWI619669B (en) | Process to produce a hybrid integrated and hybrid integrated component with at least two mems-parts | |
| JP4404143B2 (en) | Semiconductor device and manufacturing method thereof | |
| TW201400401A (en) | Hybrid integrated component and method for the manufacture thereof | |
| TW201409586A (en) | Hybridly integrated component and method for the production thereof | |
| TW201118378A (en) | Acceleration sensor element and acceleration sensor having same | |
| US10934158B2 (en) | Semiconductor device including a microelectromechanical structure and an associated integrated electronic circuit | |
| WO2020248466A1 (en) | Back hole lead type pressure sensor and manufacturing method therefor | |
| JP2004333133A (en) | Inertial force sensor | |
| JP4847686B2 (en) | Semiconductor acceleration sensor | |
| US20040263186A1 (en) | Capacitance type dynamic quantity sensor | |
| JP3938199B1 (en) | Wafer level package structure and sensor device | |
| JP2010129609A (en) | Interposer | |
| JP4396009B2 (en) | Integrated sensor | |
| JP4665733B2 (en) | Sensor element | |
| WO2007061050A1 (en) | Sensor device and method for manufacturing same | |
| US20240308841A1 (en) | Mems device and manufacturing method for mems device | |
| JP5069410B2 (en) | Sensor element | |
| JP4816065B2 (en) | Manufacturing method of sensor module | |
| JP2008047609A (en) | Method for manufacturing sensor chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091219 Year of fee payment: 12 |