JPH0212030B2 - - Google Patents

Info

Publication number
JPH0212030B2
JPH0212030B2 JP57183693A JP18369382A JPH0212030B2 JP H0212030 B2 JPH0212030 B2 JP H0212030B2 JP 57183693 A JP57183693 A JP 57183693A JP 18369382 A JP18369382 A JP 18369382A JP H0212030 B2 JPH0212030 B2 JP H0212030B2
Authority
JP
Japan
Prior art keywords
mosfet
oxide film
layer
source
polysilicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57183693A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5974673A (ja
Inventor
Yasuo Nakai
Minoru Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57183693A priority Critical patent/JPS5974673A/ja
Publication of JPS5974673A publication Critical patent/JPS5974673A/ja
Publication of JPH0212030B2 publication Critical patent/JPH0212030B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57183693A 1982-10-21 1982-10-21 半導体装置の製造方法 Granted JPS5974673A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57183693A JPS5974673A (ja) 1982-10-21 1982-10-21 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57183693A JPS5974673A (ja) 1982-10-21 1982-10-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5974673A JPS5974673A (ja) 1984-04-27
JPH0212030B2 true JPH0212030B2 (enrdf_load_stackoverflow) 1990-03-16

Family

ID=16140283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57183693A Granted JPS5974673A (ja) 1982-10-21 1982-10-21 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5974673A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4603468A (en) * 1984-09-28 1986-08-05 Texas Instruments Incorporated Method for source/drain self-alignment in stacked CMOS
US4656731A (en) * 1985-08-05 1987-04-14 Texas Instruments Incorporated Method for fabricating stacked CMOS transistors with a self-aligned silicide process

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5028701U (enrdf_load_stackoverflow) * 1973-07-09 1975-04-02
JPS51433A (en) * 1974-06-21 1976-01-06 Ueyama Jitsugyo Kk Gorufurenshujono boorukaishusochi
JPS5785262A (en) * 1980-11-17 1982-05-27 Toshiba Corp Manufacture of metal oxide semiconductor type semiconductor device

Also Published As

Publication number Publication date
JPS5974673A (ja) 1984-04-27

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