JPH02118954U - - Google Patents
Info
- Publication number
- JPH02118954U JPH02118954U JP2658189U JP2658189U JPH02118954U JP H02118954 U JPH02118954 U JP H02118954U JP 2658189 U JP2658189 U JP 2658189U JP 2658189 U JP2658189 U JP 2658189U JP H02118954 U JPH02118954 U JP H02118954U
- Authority
- JP
- Japan
- Prior art keywords
- source
- semiconductor layer
- thin film
- film transistor
- drain electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989026581U JP2560602Y2 (ja) | 1989-03-10 | 1989-03-10 | 薄膜トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989026581U JP2560602Y2 (ja) | 1989-03-10 | 1989-03-10 | 薄膜トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02118954U true JPH02118954U (de) | 1990-09-25 |
| JP2560602Y2 JP2560602Y2 (ja) | 1998-01-26 |
Family
ID=31248339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989026581U Expired - Lifetime JP2560602Y2 (ja) | 1989-03-10 | 1989-03-10 | 薄膜トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2560602Y2 (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012137251A1 (ja) * | 2011-04-06 | 2012-10-11 | パナソニック株式会社 | 表示装置用薄膜半導体装置及びその製造方法 |
| CN103503125A (zh) * | 2012-01-20 | 2014-01-08 | 松下电器产业株式会社 | 薄膜晶体管 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61145870A (ja) * | 1984-12-19 | 1986-07-03 | Matsushita Electric Ind Co Ltd | 薄膜電界効果トランジスタおよびその製造方法 |
| JPS63157476A (ja) * | 1986-12-22 | 1988-06-30 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ |
| JPS63237033A (ja) * | 1987-03-26 | 1988-10-03 | Seiko Instr & Electronics Ltd | 薄膜トランジスタの製造方法 |
-
1989
- 1989-03-10 JP JP1989026581U patent/JP2560602Y2/ja not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61145870A (ja) * | 1984-12-19 | 1986-07-03 | Matsushita Electric Ind Co Ltd | 薄膜電界効果トランジスタおよびその製造方法 |
| JPS63157476A (ja) * | 1986-12-22 | 1988-06-30 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ |
| JPS63237033A (ja) * | 1987-03-26 | 1988-10-03 | Seiko Instr & Electronics Ltd | 薄膜トランジスタの製造方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012137251A1 (ja) * | 2011-04-06 | 2012-10-11 | パナソニック株式会社 | 表示装置用薄膜半導体装置及びその製造方法 |
| CN103109373A (zh) * | 2011-04-06 | 2013-05-15 | 松下电器产业株式会社 | 显示装置用薄膜半导体装置及其制造方法 |
| JPWO2012137251A1 (ja) * | 2011-04-06 | 2014-07-28 | パナソニック株式会社 | 表示装置用薄膜半導体装置及びその製造方法 |
| JP5649720B2 (ja) * | 2011-04-06 | 2015-01-07 | パナソニック株式会社 | 薄膜半導体装置及びその製造方法 |
| CN103503125A (zh) * | 2012-01-20 | 2014-01-08 | 松下电器产业株式会社 | 薄膜晶体管 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2560602Y2 (ja) | 1998-01-26 |