JPH0211014B2 - - Google Patents

Info

Publication number
JPH0211014B2
JPH0211014B2 JP58014169A JP1416983A JPH0211014B2 JP H0211014 B2 JPH0211014 B2 JP H0211014B2 JP 58014169 A JP58014169 A JP 58014169A JP 1416983 A JP1416983 A JP 1416983A JP H0211014 B2 JPH0211014 B2 JP H0211014B2
Authority
JP
Japan
Prior art keywords
wire
strength
high temperature
annealing
content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58014169A
Other languages
English (en)
Other versions
JPS59139663A (ja
Inventor
Akira Kyono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP58014169A priority Critical patent/JPS59139663A/ja
Publication of JPS59139663A publication Critical patent/JPS59139663A/ja
Publication of JPH0211014B2 publication Critical patent/JPH0211014B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48839—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48844—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48855—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85455—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】
この発明は、半導体装置の製造に際して施され
るワイヤ・ボンデイングに使用するのに適した
Cu合金細線に関するものである。 一般に、半導体装置としては、トランジスタや
IC、さらにLSIなどが知られているが、例えばIC
などの半導体装置は、 (a) Cu合金の板材または条材の片面に、Au，
Ag，Ni、およびその合金などのメツキ層を形
成したものからなるリード素材を用意し、 (b) 上記リード素材にプレス打抜き加工を施して
製造せんとする半導体装置の形状に適合したリ
ードフレームとし、 (c) 上記リードフレームの所定個所に高純度Siま
たはGeなどの半導体素子を上記メツキ層を介
して熱圧着し、 (d) 上記リードフレームと上記半導体素子に対し
て、AuまたはAu合金細線を用い、熱圧着また
は超音波熱圧着法にてワイヤ・ボンデイングを
施し、 (e) 上記半導体素子、上記AuまたはAu合金細
線、および半導体素子が取付けれている部分の
リードフレームをプラスチツクでパツクし、 (f) 最終的に、上記リードフレームにおける相互
に連なる部分を切除してリード材とする、 以上(a)〜(f)の主要工程によつて製造されてい
る。 上記のように半導体装置の製造に際しては、ワ
イヤ・ボンデイング（結線）用として高価なAu
またはAu合金細線を使用しているために、これ
が半導体装置のコスト高の原因の１つとなつてお
り、さらにAuおよびAu合金細線は結線時の高温
での機械的強度、特に破断強さが十分でないこと
から、高速のワイヤ・ボンデイング装置を用いた
場合には断線したり、結線にたるみが生じ、シヨ
ート（短絡）の原因となるなどの問題点を有する
ものであつた。 本発明者等は、上述のような観点から、ワイ
ヤ・ボンデイング用細線に要求される高温強度を
有し、かつ細線自体のコストが安いワイヤ・ボン
デイング用細線を開発すべく研究を行なつた結
果、重量％で（以下％は重量％を示す）、 pd：0.1〜50％を含有し、さらに必要応じて、 Ge，Be，およびCaのうちの１種または２種以
上：0.005〜0.5％を含有し、 残りがCuと不可避不純物からなる組成を有す
るCu合金細線は、すぐれた高温強度を有し、し
たがつて、これを半導体装置のワイヤ・ボンデイ
ング用として使用した場合に強度不足による上記
のような問題点発生を皆無とすることができるば
かりでなく、より一層の細線化が可能となり、か
つCu合金であるためにAuおよびAu合金に比して
著しくコストの安いものとなるという知見を得た
のである。 この発明は、上記知見にもとづいてなされたも
のであつて、以下に成分組成を上記の通りに限定
した理由を説明する。 (a) Pd Pd成分には、Cuに完全に固溶して高温強度、
すなわち高温破断強さおよび高温引張強さを向
上させる作用があるが、その含有量が0.1％未
満では前記作用に所望の効果が得られず、一方
50％を越えて含有させると、伸線加工性が劣化
するようになることから、その含有量を0.1〜
50％と定めた。 (b) Ge，Be，およびCa これらの成分には、Pdとの共存において、
さらに一段と高温強度を向上せしめる作用があ
るので、必要に応じて含有されるが、その含有
量が0.005％未満では所望の高温強度改善効果
が得られず、一方0.5％を越えて含有させると、
硬さ向上が著しくなつて伸線加工が困難になる
ばかりでなく、結線時に半導体素子を損傷する
ようになることから、その含有量を0.005〜0.5
％と定めた。 つぎに、この発明のCu合金細線を実施例によ
り具体的に説明する。 実施例 通常の真空溶解法により、それぞれ第１表に示
される成分組成をもつた溶湯を調製し、直径：55
mmφ×長さ：150mmのビレツトに鋳造し、面削し
て直径：50mmφ×長さ：140mmの寸法とし、つい
で溝型ロールを使用し、断面加工率：25％の冷間
圧延を施した後、真空中、温度：400℃に加熱保
持の焼鈍を１サイクルとして、所定サイクルを施
すことによつて直径：８mmφの線材に加工し、引
続いて、この線材にダイスにより皮むき加工を施
して直径：7.5mmφとした後、ダイスを使用し、
断面加工率：50％の線引き加工、および真空中、
温度：400℃に加熱保持の焼鈍を１サイクルとす
る線引き加工を所定サイクル施すことによつて、
直径：25μｍを有する本発明Cu合金細線１〜11を
それぞれ製造した。 ついで、この結果得られた本発明Cu合金細線
１〜11について、高温強度を評価する目的で、ワ
イヤ・ボンデイング時の作業温度に相当する250
℃での高温破断強さ、並びにSi半導体素子へのボ
ンデイング後の接合強度を評価する目的で、接合
部の剪断荷重をそれぞれ測定した。これらの測定
結果を第１表に合せて示した。なお、第１表には
比較の目的で、直径：25μｍのAu細線の測定結果
も示した。 第１表に示される結果から、本発明Cu合金細
線１〜11は、いずれもAu細線に比して著しくす
ぐ
【表】
【表】 れた高温強度および接合強度をもつことが明らか
である。 上述のように、この発明のCu合金細線は、す
ぐれた高温強度および接合強度を有するので、こ
れを半導体装置のワイヤ・ボンデイング用として
用いた場合、特に結線の高速化に際しても破断や
たるみの発生がなく、かつより細い細線での適用
も可能であり、しかもAuおよびAu合金細線に比
して著しく安価であるなど工業上有用な効果をも
たらすものである。

Claims (1)

  1. 【特許請求の範囲】 １ Pd：0.1〜50重量％を含有し、残りがCuと不
    可避不純物からなる組成を有することを特徴とす
    る半導体装置のワイヤ・ボンデイング用Cu合金
    細線。 ２ Pd：0.1〜50重量％を含有し、さらにGe，
    Be，およびCaのうちの１種または２種以上：
    0.005〜0.5重量％を含有し、残りがCuと不可避不
    純物からなる組成を有することを特徴とする半導
    体装置のワイヤ・ボンデイング用Cu合金細線。
JP58014169A 1983-01-31 1983-01-31 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線 Granted JPS59139663A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58014169A JPS59139663A (ja) 1983-01-31 1983-01-31 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58014169A JPS59139663A (ja) 1983-01-31 1983-01-31 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線

Publications (2)

Publication Number Publication Date
JPS59139663A JPS59139663A (ja) 1984-08-10
JPH0211014B2 true JPH0211014B2 (ja) 1990-03-12

Family

ID=11853636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58014169A Granted JPS59139663A (ja) 1983-01-31 1983-01-31 半導体装置のワイヤ・ボンデイング用Ｃｕ合金細線

Country Status (1)

Country Link
JP (1) JPS59139663A (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6120693A (ja) * 1984-07-06 1986-01-29 Toshiba Corp ボンデイングワイヤ−
JPS6280241A (ja) * 1985-10-01 1987-04-13 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
US5000779A (en) * 1988-05-18 1991-03-19 Leach & Garner Palladium based powder-metal alloys and method for making same
JP4999887B2 (ja) * 2009-06-18 2012-08-15 株式会社関 高純度パラジウム製品、及びその鋳造方法
EP2447380B1 (en) * 2009-06-24 2015-02-25 Nippon Steel & Sumikin Materials Co., Ltd. Copper alloy bonding wire for semiconductor
TWI486970B (zh) * 2013-01-29 2015-06-01 Tung Han Chuang 銅基合金線材及其製造方法
SG10201404628TA (en) * 2014-08-04 2016-03-30 Heraeus Deutschland Gmbh & Co Kg Ball-bond arrangement
JP2016211055A (ja) * 2015-05-12 2016-12-15 株式会社豊田中央研究所 接合電極、半導体素子及び電子部品
CN109777993B (zh) * 2019-02-26 2021-03-16 昆山全亚冠环保科技有限公司 一种铜金合金轧制工艺

Also Published As

Publication number Publication date
JPS59139663A (ja) 1984-08-10

Similar Documents

Publication Publication Date Title
US9972595B2 (en) Bonding wire for high-speed signal line
JPH0211013B2 (ja)
CN105132735A (zh) 一种微电子封装用超细铜合金键合丝及其制备方法
JPH0211014B2 (ja)
JP3367544B2 (ja) ボンディング用金合金細線及びその製造方法
JPS6112011B2 (ja)
JPH0212022B2 (ja)
JP2008174779A (ja) ワイヤ材料およびその製造方法
JPH1187396A (ja) セリウムミッシュメタルを含有する金合金から成る極細線及びその製造方法
JPS6365036A (ja) 銅細線とその製造方法
JPH0520494B2 (ja)
JP3323185B2 (ja) 半導体素子接続用金線
JPH0245336B2 (ja)
JPH0572750B2 (ja)
JP2779683B2 (ja) 半導体素子用ボンディングワイヤ
JPS63235442A (ja) 銅細線及びその製造方法
JPH0330462B2 (ja)
JPH0237698B2 (ja)
JPH1136028A (ja) 半導体装置用リードフレーム
JPS5826662B2 (ja) 半導体素子のボンデイング用金線
JPH0375346A (ja) 高強度・高導電型リードフレーム用金属板の製造方法
JP2706539B2 (ja) ボンディングワイヤー
JP2661247B2 (ja) 半導体素子ボンディング用金合金細線
JPH0796321A (ja) 銀入り銅合金極細線の製造方法
JPH0131691B2 (ja)