JPH0210839A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0210839A JPH0210839A JP16175688A JP16175688A JPH0210839A JP H0210839 A JPH0210839 A JP H0210839A JP 16175688 A JP16175688 A JP 16175688A JP 16175688 A JP16175688 A JP 16175688A JP H0210839 A JPH0210839 A JP H0210839A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline silicon
- melting point
- point metal
- high melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 238000002844 melting Methods 0.000 claims abstract description 19
- 230000008018 melting Effects 0.000 claims abstract description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 15
- 239000011574 phosphorus Substances 0.000 claims abstract description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 7
- 239000001257 hydrogen Substances 0.000 claims abstract description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 230000001603 reducing effect Effects 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000011259 mixed solution Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000001312 dry etching Methods 0.000 abstract description 4
- 239000011229 interlayer Substances 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000000206 photolithography Methods 0.000 abstract description 3
- 229960002050 hydrofluoric acid Drugs 0.000 abstract 1
- 238000001035 drying Methods 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000005871 repellent Substances 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000002940 repellent Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- AWQSAIIDOMEEOD-UHFFFAOYSA-N 5,5-Dimethyl-4-(3-oxobutyl)dihydro-2(3H)-furanone Chemical compound CC(=O)CCC1CC(=O)OC1(C)C AWQSAIIDOMEEOD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000001256 tonic effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は多結晶シリコン膜と高融点金属模との二層膜を
有する半導体装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a semiconductor device having a two-layer film of a polycrystalline silicon film and a high melting point metal pattern.
従来の技術
半導体集積回路素子の微細化、高密度化に伴ない配線材
料として高融点金属が注目されている。2. Description of the Related Art As semiconductor integrated circuit devices become smaller and more densely packed, high-melting point metals are attracting attention as wiring materials.
高融点金属は従来のムｒ配線と異なり９００℃程度での
熱処理が可能な為、配線上の絶縁膜を熱処理して平坦化
できる等の利点があり素子の微細化に有利である。Unlike conventional uneven wiring, high-melting point metals can be heat-treated at about 900° C., so they have advantages such as the ability to heat-treat and flatten the insulating film on the wiring, which is advantageous for miniaturizing elements.
第２図に従来の技術による高融点金属配線形成の工程順
断面図を示す。FIG. 2 shows a cross-sectional view of the process of forming high-melting point metal wiring according to a conventional technique.
第２図ａに示す様にシリコン基板１上に層間絶縁膜２を
形成しコンタクトホール等を形成後、多結晶シリコン膜
３をＬＰＣＶＤ （減圧化学気相成長）法により形成す
る。この多結晶シリコン膜３を低抵抗化する為、気相拡
散法によりＰＨｓガスおよび０２ガス中で９００’Ｃ程
度で熱処理し、リンを添加する。この際、同図すに示す
様に多結晶シリコン膜３上にはリンを含んだ酸化膜であ
るリンガラス４が形成される。このリンガラス４ヲ希７
ツ酸によるウェットエツチングで除去し水洗後、スピン
ドライにより乾燥する。ここで多結晶シリコン膜３は撥
水性である為リンガラス４除去後の表面は撥水性表面と
なる。スピンドライによる乾燥の際に撥水性表面では特
定のパターン上にシミ状の異物８が形成される。次に多
結晶シリコン膜３上にスパッタ法あるいはＣＶＤ法によ
り高融点金属膜６を形成しく同図ｄ）、同図ｅ、 ｒ
に示す様にホトリソグラフィー法およびドライエツチン
グ法により多結晶シリコン膜３と高融点金属膜６の２層
膜をパターニングし配線形成を行なう。As shown in FIG. 2a, after forming an interlayer insulating film 2 on a silicon substrate 1 and forming contact holes and the like, a polycrystalline silicon film 3 is formed by LPCVD (low pressure chemical vapor deposition). In order to lower the resistance of this polycrystalline silicon film 3, it is heat-treated at about 900'C in PHs gas and 02 gas by vapor phase diffusion, and phosphorus is added thereto. At this time, as shown in the figure, a phosphorus glass 4, which is an oxide film containing phosphorus, is formed on the polycrystalline silicon film 3. This ring glass 4 woki 7
It is removed by wet etching with tonic acid, washed with water, and then dried by spin drying. Here, since the polycrystalline silicon film 3 is water repellent, the surface after the phosphorus glass 4 is removed becomes a water repellent surface. During drying by spin drying, stain-like foreign matter 8 is formed on a specific pattern on the water-repellent surface. Next, a high melting point metal film 6 is formed on the polycrystalline silicon film 3 by sputtering or CVD.
As shown in FIG. 2, the two-layer film of polycrystalline silicon film 3 and high melting point metal film 6 is patterned by photolithography and dry etching to form wiring.
発明が解決しようとする問題点
この方法による２層配線膜の形成方法では前記の様に多
結晶シリコン膜３上にシミ状の異物８が形成され、後工
程のパターニングの際、このシミ状異物８が対ドライエ
ツチングのマスクとなυ高融点金属膜６がエツチングさ
れても異物下の多結晶シリコン膜３はエツチングされず
残存する。Problems to be Solved by the Invention In this method of forming a two-layer wiring film, as described above, a stain-like foreign substance 8 is formed on the polycrystalline silicon film 3, and this stain-like foreign substance is removed during patterning in a later process. 8 is a mask for dry etching.Even if the high melting point metal film 6 is etched, the polycrystalline silicon film 3 under the foreign matter is not etched and remains.
この為、配線間の短絡が生じ半導体装置の不良原因とな
る。For this reason, a short circuit occurs between the wiring lines, which causes a failure of the semiconductor device.
問題点を解決するための手段
前記問題点を解決するために本発明による半導体装置の
製造方法は次のような手段をとる。Means for Solving the Problems In order to solve the above-mentioned problems, the method for manufacturing a semiconductor device according to the present invention takes the following measures.
まず希フッ酸によりリンガラスを除去した後。First, after removing phosphorus glass with dilute hydrofluoric acid.
スピン乾燥前の最終洗浄で多結晶シリコン膜上に自然酸
化膜を形成し、表面親水性となる処理を行なう。In the final cleaning before spin drying, a natural oxide film is formed on the polycrystalline silicon film to make the surface hydrophilic.
次に高融点金属膜形成前に純水素または水素を含むガス
雰囲気中で熱処理し還元作用により多結晶シリコン膜上
の自然酸化膜を除去してから連続して高融点金属膜を形
成するものである。Next, before forming the high melting point metal film, heat treatment is performed in pure hydrogen or a gas atmosphere containing hydrogen to remove the natural oxide film on the polycrystalline silicon film by reducing action, and then a high melting point metal film is continuously formed. be.
作用
この方法による多結晶シリコン膜と高融点金属膜の２層
膜形成方法によれば次のような作用がある。Effects This method of forming a two-layer film of a polycrystalline silicon film and a high melting point metal film has the following effects.
まず希７ノ酸によるリンガラス除去後の最終洗浄で表面
親水性となっている為、スピン乾燥によるシミ状の異物
の発生が全く生じない。First, the surface is made hydrophilic by the final cleaning after removing phosphorus glass with dilute heptanoic acid, so no stain-like foreign matter is generated by spin drying.
また多結晶シリコン膜上の自然酸化膜を水素の還元作用
により除去する事で多結晶シリコン膜と高融点金属膜と
の密着性も良く、膜はがれ等の問題もない。Furthermore, since the natural oxide film on the polycrystalline silicon film is removed by the reduction action of hydrogen, the adhesion between the polycrystalline silicon film and the high melting point metal film is good, and there are no problems such as film peeling.
すなわち良好な多結晶シリコン膜と高融点金属膜の２層
膜形成が可能で、高歩留りで信頼性の高い半導体装置の
製造が可能となる。That is, it is possible to form a two-layer film of a good polycrystalline silicon film and a high melting point metal film, and it is possible to manufacture a semiconductor device with high yield and high reliability.
実施例
以下１本発明による半導体装置の製造方法を第１図に示
す工程順断面図により詳述する。EXAMPLE 1 A method for manufacturing a semiconductor device according to the present invention will be explained in detail with reference to step-by-step sectional views shown in FIG.
まず第１図ａに示す様にシリコン基板１上に層間絶縁膜
２を形成し、コンタクトホール等を形成した後、ＬＰＧ
ＶＤ （減圧化学気相成長）法により多結晶シリコン膜
３を１５０ｎｍ形成する。次に気相拡散法によりＰＨ３
ガスおよび０２ガス雰囲気で９００℃３０分の熱処理を
行ない、多結晶シリコン膜３にリンを添加し低抵抗化す
る。First, as shown in FIG. 1a, an interlayer insulating film 2 is formed on a silicon substrate 1, and after forming contact holes etc.
A polycrystalline silicon film 3 with a thickness of 150 nm is formed by VD (low pressure chemical vapor deposition). Next, by vapor phase diffusion method, PH3
A heat treatment is performed at 900° C. for 30 minutes in a gas and 02 gas atmosphere to add phosphorus to the polycrystalline silicon film 3 to lower its resistance.
この処理の後、同図すに示す様に多結晶シリコン膜３上
には約２５ｎｍ程のリンを含んだ酸化膜（リンガラス）
が形成されている。After this treatment, as shown in the figure, an oxide film (phosphorous glass) containing about 25 nm of phosphorus is formed on the polycrystalline silicon film 3.
is formed.
次にこのリンガラスをフッ酸と水の混合液により完全除
去し３０分の水洗後、連続して過酸化水素とアンモニア
と水の混合液で７０℃、１６分間の処理を行なう。この
処理で多結晶シリコン膜３上には同図Ｃに示すように約
２ｎｍの自然酸化膜６が形成される。Next, this phosphorus glass is completely removed with a mixture of hydrofluoric acid and water, and after washing with water for 30 minutes, treatment is continuously performed at 70° C. for 16 minutes with a mixture of hydrogen peroxide, ammonia, and water. Through this process, a natural oxide film 6 of about 2 nm is formed on the polycrystalline silicon film 3, as shown in FIG.
次に同試料を水素雰囲気中で４００’０２０分間の熱処
理を行ない、水素の還元作用により自然酸化膜６を除去
する。Next, the same sample is subjected to heat treatment for 400'020 minutes in a hydrogen atmosphere, and the natural oxide film 6 is removed by the reducing action of hydrogen.
その後、同図θに示す様にＣＶＤ法により高融点金属膜
ｅを形成し、続いて同図ｒ、 Ｈに示す様にホトリン
グラフイー法およびドライエツチング法により多結晶シ
リコン膜３と高融点金属膜６の２層膜をパターニングし
、配線形成を行なう。Thereafter, as shown in θ in the figure, a high melting point metal film e is formed by the CVD method, and then as shown in r and h in the same figure, the polycrystalline silicon film 3 and the high melting point metal film 3 are formed by photolithography and dry etching. The two-layer metal film 6 is patterned to form wiring.
発明の効果
以上の様に本発明による半導体装置の製造方法によれば
、シミ状の異物の発生がなく配線間の短絡が生じる心配
はない。Effects of the Invention As described above, according to the method of manufacturing a semiconductor device according to the present invention, there is no generation of foreign particles in the form of stains, and there is no fear of short circuits occurring between wiring lines.
すなわち良好な多結晶シリコン膜と高融点金属膜との２
層膜形成が可能で、高歩留りで信頼性の高い半導体装置
の製造が可能である。In other words, two good polycrystalline silicon films and a high melting point metal film.
It is possible to form layered films, and it is possible to manufacture semiconductor devices with high yield and high reliability.
第１図は本発明による半導体装置の製造方法の工程順断
面図、第２図は従来の技術による半導体装置の製造方法
の工程順断面図である。
１・・・・・・シリコン基板、２・・・・・・層間絶縁
膜、３・・・・・・多結晶シリコン、４・・・・・・リ
ンガラス、５・・・・・・自熱酸化膜、
６・・・・・・高融点金属、
７・・・・・・ホトレジス
ト、
８・・・・・・シミ状異物。FIG. 1 is a step-by-step sectional view of a semiconductor device manufacturing method according to the present invention, and FIG. 2 is a step-by-step sectional view of a semiconductor device manufacturing method according to the prior art. DESCRIPTION OF SYMBOLS 1... Silicon substrate, 2... Interlayer insulating film, 3... Polycrystalline silicon, 4... Phosphorous glass, 5... Self Thermal oxide film, 6... High melting point metal, 7... Photoresist, 8... Spot-like foreign matter.
Claims (1)
結晶シリコン薄膜上にリンガラスを形成した後、前記リ
ンガラスを希フッ酸により除去しその後連続して過酸化
水素、アンモニア、水の混合液で洗浄処理する工程と、
水素を含む還元ガス雰囲気中で熱処理した後ＣＶＤ（化
学気相成長）法またはスパッタ法により前記多結晶シリ
コン薄膜上に高融点金属薄膜を形成する工程とを含むこ
とを特徴とする半導体装置の製造方法。After adding phosphorus to a polycrystalline silicon thin film using a thermal diffusion method to form phosphorus glass on the polycrystalline silicon thin film, the phosphorus glass is removed with dilute hydrofluoric acid, and then hydrogen peroxide, ammonia, and water are successively added to the polycrystalline silicon thin film. A step of cleaning with a mixed solution,
manufacturing a semiconductor device, comprising the step of forming a high melting point metal thin film on the polycrystalline silicon thin film by heat treatment in a reducing gas atmosphere containing hydrogen, and then using a CVD (chemical vapor deposition) method or a sputtering method; Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16175688A JPH0210839A (en) | 1988-06-29 | 1988-06-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16175688A JPH0210839A (en) | 1988-06-29 | 1988-06-29 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0210839A true JPH0210839A (en) | 1990-01-16 |
Family
ID=15741293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16175688A Pending JPH0210839A (en) | 1988-06-29 | 1988-06-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0210839A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102029726A (en) * | 2010-11-16 | 2011-04-27 | 上海秋林机械有限公司 | Guide positioning device for pressing plates in lifting process |
-
1988
- 1988-06-29 JP JP16175688A patent/JPH0210839A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102029726A (en) * | 2010-11-16 | 2011-04-27 | 上海秋林机械有限公司 | Guide positioning device for pressing plates in lifting process |
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