JPH0194467U - - Google Patents
Info
- Publication number
- JPH0194467U JPH0194467U JP19111887U JP19111887U JPH0194467U JP H0194467 U JPH0194467 U JP H0194467U JP 19111887 U JP19111887 U JP 19111887U JP 19111887 U JP19111887 U JP 19111887U JP H0194467 U JPH0194467 U JP H0194467U
- Authority
- JP
- Japan
- Prior art keywords
- heating means
- side wall
- heating
- quartz boat
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000001816 cooling Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 239000011343 solid material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000003708 ampul Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19111887U JPH0449185Y2 (cs) | 1987-12-16 | 1987-12-16 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19111887U JPH0449185Y2 (cs) | 1987-12-16 | 1987-12-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0194467U true JPH0194467U (cs) | 1989-06-21 |
| JPH0449185Y2 JPH0449185Y2 (cs) | 1992-11-19 |
Family
ID=31482044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19111887U Expired JPH0449185Y2 (cs) | 1987-12-16 | 1987-12-16 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0449185Y2 (cs) |
-
1987
- 1987-12-16 JP JP19111887U patent/JPH0449185Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0449185Y2 (cs) | 1992-11-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5580798A (en) | Ribbon crystal growing method by lateral pulling | |
| JPH0194467U (cs) | ||
| JPS5711897A (en) | Method of pulling up single crystal and device therefor | |
| JPH0315550Y2 (cs) | ||
| JPS54128988A (en) | Preparation of single crystal | |
| JP2686662B2 (ja) | 酸化物単結晶の製造装置 | |
| JPS6321576Y2 (cs) | ||
| JPS5515939A (en) | Production of single crystal | |
| JPH02293390A (ja) | 単結晶引上げ装置 | |
| JPS6456394A (en) | Device for growing single crystal | |
| JPH0367075U (cs) | ||
| JPH03120570U (cs) | ||
| JPH0511076B2 (cs) | ||
| JPS6414189A (en) | Growing device for crystal of semiconductor | |
| JPH0742194B2 (ja) | 単結晶の製造装置 | |
| JPS6364778U (cs) | ||
| JPS5917900Y2 (ja) | 炭化けい素ホイスカ−生成用反応容器 | |
| JPH0278571U (cs) | ||
| JPS54162686A (en) | Preparation of oxide single crystal | |
| JPS6369166U (cs) | ||
| JPH05279188A (ja) | ルチル単結晶の育成方法 | |
| JPS63103895A (ja) | CdTeの結晶成長装置 | |
| JPS6330356U (cs) | ||
| JPS61261287A (ja) | CdTeの結晶成長装置 | |
| JPS61198278U (cs) |