JPH0193160A - 半導体装置 - Google Patents

Info

Publication number

JPH0193160A

JPH0193160A JP62252062A JP25206287A JPH0193160A JP H0193160 A JPH0193160 A JP H0193160A JP 62252062 A JP62252062 A JP 62252062A JP 25206287 A JP25206287 A JP 25206287A JP H0193160 A JPH0193160 A JP H0193160A

Authority

JP

Japan

Prior art keywords

layer

emitter

transistor

base

collector

Prior art date

1987-10-05

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

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• 239000004065 semiconductor Substances 0.000 title claims description 17
• 239000000758 substrate Substances 0.000 claims abstract description 10
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
• 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
• 239000000969 carrier Substances 0.000 abstract description 6
• 238000000034 method Methods 0.000 abstract description 2
• 230000002093 peripheral effect Effects 0.000 abstract 1
• 229910052581 Si3N4 Inorganic materials 0.000 description 9
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
• 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
• 229920005591 polysilicon Polymers 0.000 description 6
• 229910052710 silicon Inorganic materials 0.000 description 6
• 239000010703 silicon Substances 0.000 description 6
• 229920002120 photoresistant polymer Polymers 0.000 description 4
• 230000000694 effects Effects 0.000 description 3
• 229910021426 porous silicon Inorganic materials 0.000 description 3
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
• 229910052782 aluminium Inorganic materials 0.000 description 2
• 238000010586 diagram Methods 0.000 description 2
• 238000004519 manufacturing process Methods 0.000 description 2
• 230000003647 oxidation Effects 0.000 description 2
• 238000007254 oxidation reaction Methods 0.000 description 2
• 238000009825 accumulation Methods 0.000 description 1
• 238000002048 anodisation reaction Methods 0.000 description 1
• 238000005530 etching Methods 0.000 description 1
• 238000002347 injection Methods 0.000 description 1
• 239000007924 injection Substances 0.000 description 1
• 230000010354 integration Effects 0.000 description 1
• 230000003071 parasitic effect Effects 0.000 description 1
• 238000005192 partition Methods 0.000 description 1
• 230000008092 positive effect Effects 0.000 description 1

Cited By (1)