JPH0189758U - - Google Patents

Info

Publication number
JPH0189758U
JPH0189758U JP15341888U JP15341888U JPH0189758U JP H0189758 U JPH0189758 U JP H0189758U JP 15341888 U JP15341888 U JP 15341888U JP 15341888 U JP15341888 U JP 15341888U JP H0189758 U JPH0189758 U JP H0189758U
Authority
JP
Japan
Prior art keywords
region
source electrode
type high
channel region
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15341888U
Other languages
English (en)
Japanese (ja)
Other versions
JPH0427174Y2 (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988153418U priority Critical patent/JPH0427174Y2/ja
Publication of JPH0189758U publication Critical patent/JPH0189758U/ja
Application granted granted Critical
Publication of JPH0427174Y2 publication Critical patent/JPH0427174Y2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP1988153418U 1988-11-24 1988-11-24 Expired JPH0427174Y2 (enrdf_load_stackoverflow)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988153418U JPH0427174Y2 (enrdf_load_stackoverflow) 1988-11-24 1988-11-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988153418U JPH0427174Y2 (enrdf_load_stackoverflow) 1988-11-24 1988-11-24

Publications (2)

Publication Number Publication Date
JPH0189758U true JPH0189758U (enrdf_load_stackoverflow) 1989-06-13
JPH0427174Y2 JPH0427174Y2 (enrdf_load_stackoverflow) 1992-06-30

Family

ID=31429240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988153418U Expired JPH0427174Y2 (enrdf_load_stackoverflow) 1988-11-24 1988-11-24

Country Status (1)

Country Link
JP (1) JPH0427174Y2 (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260632A (ja) * 1993-03-02 1994-09-16 Toyo Electric Mfg Co Ltd 分布型主電極構造を有する静電誘導型半導体素子
JPH06268205A (ja) * 1993-03-12 1994-09-22 Toyo Electric Mfg Co Ltd 静電誘導主電極短絡構造を有する静電誘導型半導体素子
JPH06302811A (ja) * 1993-04-19 1994-10-28 Toyo Electric Mfg Co Ltd 静電誘導ショットキー短絡構造を有する静電誘導型半導体素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676574A (en) * 1979-11-26 1981-06-24 Semiconductor Res Found Schottky injection electrode type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676574A (en) * 1979-11-26 1981-06-24 Semiconductor Res Found Schottky injection electrode type semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260632A (ja) * 1993-03-02 1994-09-16 Toyo Electric Mfg Co Ltd 分布型主電極構造を有する静電誘導型半導体素子
JPH06268205A (ja) * 1993-03-12 1994-09-22 Toyo Electric Mfg Co Ltd 静電誘導主電極短絡構造を有する静電誘導型半導体素子
JPH06302811A (ja) * 1993-04-19 1994-10-28 Toyo Electric Mfg Co Ltd 静電誘導ショットキー短絡構造を有する静電誘導型半導体素子

Also Published As

Publication number Publication date
JPH0427174Y2 (enrdf_load_stackoverflow) 1992-06-30

Similar Documents

Publication Publication Date Title
JPS63188964U (enrdf_load_stackoverflow)
EP0570595A4 (en) Vertical insulated gate semiconductor device and method for its manufacture
FR2404923A1 (fr) Transistor bipolaire
IE801633L (en) Transistor 3-amino-1-(4,5,6,7- tetrahydrobenzothiazolyl) - 2 -¹pyrazolines.
JPH0189758U (enrdf_load_stackoverflow)
SE7714902L (sv) Effekttransistor
GB1303337A (enrdf_load_stackoverflow)
EP0098497A3 (de) IGFET mit Ladungsträgerinjektion
JPS6417476A (en) Mos gate bipolar transistor
JPS5478673A (en) Manufacture of complementary insulator gate field effect transistor
JPS55166965A (en) Junction type fet
JPS5480091A (en) Manufacture of complementary field effect semiconductor device
JPS6476768A (en) Semiconductor device and manufacture thereof
JPS5499578A (en) Field effect transistor
JPS5466079A (en) Manufacture of electric field effect transistor
JPS57112075A (en) Insulating gate fet
JPH0396052U (enrdf_load_stackoverflow)
JPS55110071A (en) Semiconductor device
JPS5475280A (en) Junction-type field effect transistor
JPS6459956A (en) Heterostructure bipolar transistor and manufacture thereof
JPS57199268A (en) Junction type field effect transistor
GB2005071A (en) A junction field effect transistor logic semiconductor device
JPH0361333U (enrdf_load_stackoverflow)
JPS6422071A (en) Semiconductor device
JPS6468973A (en) Semiconductor memory device and manufacture thereof