JPH0427174Y2 - - Google Patents
Info
- Publication number
- JPH0427174Y2 JPH0427174Y2 JP1988153418U JP15341888U JPH0427174Y2 JP H0427174 Y2 JPH0427174 Y2 JP H0427174Y2 JP 1988153418 U JP1988153418 U JP 1988153418U JP 15341888 U JP15341888 U JP 15341888U JP H0427174 Y2 JPH0427174 Y2 JP H0427174Y2
- Authority
- JP
- Japan
- Prior art keywords
- region
- source electrode
- silicide
- channel
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988153418U JPH0427174Y2 (enrdf_load_stackoverflow) | 1988-11-24 | 1988-11-24 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988153418U JPH0427174Y2 (enrdf_load_stackoverflow) | 1988-11-24 | 1988-11-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0189758U JPH0189758U (enrdf_load_stackoverflow) | 1989-06-13 |
JPH0427174Y2 true JPH0427174Y2 (enrdf_load_stackoverflow) | 1992-06-30 |
Family
ID=31429240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988153418U Expired JPH0427174Y2 (enrdf_load_stackoverflow) | 1988-11-24 | 1988-11-24 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0427174Y2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2777994B2 (ja) * | 1993-03-02 | 1998-07-23 | 東洋電機製造株式会社 | 分布型主電極構造を有する静電誘導型半導体素子 |
JP2725131B2 (ja) * | 1993-03-12 | 1998-03-09 | 東洋電機製造株式会社 | 静電誘導主電極短絡構造を有する静電誘導型半導体素子 |
JP2811526B2 (ja) * | 1993-04-19 | 1998-10-15 | 東洋電機製造株式会社 | 静電誘導ショットキー短絡構造を有する静電誘導型半導体素子 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5676574A (en) * | 1979-11-26 | 1981-06-24 | Semiconductor Res Found | Schottky injection electrode type semiconductor device |
-
1988
- 1988-11-24 JP JP1988153418U patent/JPH0427174Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPH0189758U (enrdf_load_stackoverflow) | 1989-06-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2812832B2 (ja) | 半導体多結晶ダイヤモンド電子デバイス及びその製造方法 | |
US5962893A (en) | Schottky tunneling device | |
JPH0523055B2 (enrdf_load_stackoverflow) | ||
US7847315B2 (en) | High efficiency rectifier | |
JPS6336147B2 (enrdf_load_stackoverflow) | ||
JPWO2011048800A1 (ja) | 半導体装置およびその製造方法 | |
US6437406B1 (en) | Super-halo formation in FETs | |
CN102751320A (zh) | 半导体器件 | |
JPH0260063B2 (enrdf_load_stackoverflow) | ||
US5589408A (en) | Method of forming an alloyed drain field effect transistor and device formed | |
JPH05251376A (ja) | トランジスターの製造方法 | |
JPH0427174Y2 (enrdf_load_stackoverflow) | ||
CN105702577A (zh) | 具有金属半导体结的半导体器件及其制造 | |
JPS63186476A (ja) | 縦形mosfet | |
CN113130650A (zh) | 功率半导体器件及其制备工艺 | |
US11777021B2 (en) | Semiconductor device | |
JP4997913B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JPH0237093B2 (enrdf_load_stackoverflow) | ||
JP2739002B2 (ja) | 半導体装置及びその製造方法 | |
GB2074374A (en) | Method of making field effect transistors | |
US6855983B1 (en) | Semiconductor device having reduced on resistance | |
JP2021111764A (ja) | 炭化珪素半導体装置の製造方法 | |
JPH11154744A (ja) | Mos制御デバイス | |
US20250031396A1 (en) | Semiconductor device | |
JPH06209015A (ja) | ダイヤモンド接合型電界効果トランジスタ及びその製造方法 |