JPH0186236U - - Google Patents
Info
- Publication number
- JPH0186236U JPH0186236U JP18250387U JP18250387U JPH0186236U JP H0186236 U JPH0186236 U JP H0186236U JP 18250387 U JP18250387 U JP 18250387U JP 18250387 U JP18250387 U JP 18250387U JP H0186236 U JPH0186236 U JP H0186236U
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- pressure cvd
- low
- diameter
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
第１図は本考案の実施例１を示す構造断面図、
第２図はウエハーと低融点金属、平板の関係を示
す構造断面図、第３図はウエハー、平板及びウエ
ハー支持具との関係を示す概念図、第４図は本考
案の実施例２を示す構造断面図、第５図は従来の
減圧ＣＶＤ装置の構造断面図、第６図は従来のウ
エハーとウエハー支持具との関係を示す概念図で
ある。
１…ウエハー、２…平板、３…ウエハー支持具
、４…低融点金属、５…石英炉、６…加熱源、７
…真空ポンプ、８…反応ガス導入管。
FIG. 1 is a structural cross-sectional view showing Embodiment 1 of the present invention;
Figure 2 is a structural sectional view showing the relationship between the wafer, low melting point metal, and flat plate; Figure 3 is a conceptual diagram showing the relationship between the wafer, flat plate, and wafer support; Figure 4 shows Embodiment 2 of the present invention. FIG. 5 is a structural sectional view of a conventional low pressure CVD apparatus, and FIG. 6 is a conceptual diagram showing the relationship between a conventional wafer and a wafer support. DESCRIPTION OF SYMBOLS 1... Wafer, 2... Flat plate, 3... Wafer support, 4... Low melting point metal, 5... Quartz furnace, 6... Heat source, 7
...Vacuum pump, 8...Reaction gas introduction pipe.
Claims (1)
装置において、前記ウエハーの薄膜形成面の裏面
に少なくとも前記ウエハーの径よりも大きい薄板
を、成膜時の温度より高く、かつウエハー上のデ
バイスに損傷を与える温度より低い融点を持つ金
属で前記ウエハーの外周から張り出させて溶着し
たことを特徴とする減圧ＣＶＤ装置。 Low pressure CVD for forming thin films on semiconductor wafers
In the apparatus, a thin plate having a diameter larger than at least the diameter of the wafer is placed on the back surface of the thin film forming surface of the wafer using a metal having a melting point higher than the temperature during film formation and lower than a temperature that would damage devices on the wafer. A low-pressure CVD device characterized in that the device is welded by extending from the outer periphery of the device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18250387U JPH0186236U (en) | 1987-11-30 | 1987-11-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18250387U JPH0186236U (en) | 1987-11-30 | 1987-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0186236U true JPH0186236U (en) | 1989-06-07 |
Family
ID=31473950
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18250387U Pending JPH0186236U (en) | 1987-11-30 | 1987-11-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0186236U (en) |
-
1987
- 1987-11-30 JP JP18250387U patent/JPH0186236U/ja active Pending
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