JPH0187529U - - Google Patents
Info
- Publication number
- JPH0187529U JPH0187529U JP18317387U JP18317387U JPH0187529U JP H0187529 U JPH0187529 U JP H0187529U JP 18317387 U JP18317387 U JP 18317387U JP 18317387 U JP18317387 U JP 18317387U JP H0187529 U JPH0187529 U JP H0187529U
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- reaction tank
- supplying
- reaction
- plasma cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 4
- 239000011888 foil Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 2
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
Description
第１図は本考案の一実施例の概略構成図、第２
図は本考案の他の実施例の概略構成図、第３図は
本考案のさらに他の実施例の概略構成図、第４図
は従来のプラズマＣＶＤ装置の概略構成図である
。
１，１１：反応槽、２，２１，２２：電極板、
３：半導体基板、１０：高周波コイル、２０：ア
ルミニウム箔、２００，３００，４００：プラズ
マＣＶＤ装置。
Figure 1 is a schematic configuration diagram of one embodiment of the present invention;
FIG. 3 is a schematic diagram of another embodiment of the present invention, FIG. 3 is a schematic diagram of still another embodiment of the present invention, and FIG. 4 is a schematic diagram of a conventional plasma CVD apparatus. 1, 11: reaction tank, 2, 21, 22: electrode plate,
3: Semiconductor substrate, 10: High frequency coil, 20: Aluminum foil, 200, 300, 400: Plasma CVD device.
Claims (1)
ならびに半導体基板と、前記反応槽内を真空に保
つ真空排気装置と、前記反応槽内に所要ガスを供
給するガスボンベおよび前記電極に供給されるプ
ラズマ用電源とを有するプラズマＣＶＤ装置にお
いて、前記電極が反応生成物による被膜形成面を
金属箔にて被覆されたことを特徴とするプラズマ
ＣＶＤ装置。 (2) 実用新案登録請求の範囲第１項に記載のプ
ラズマＣＶＤ装置において、電極それ自体が金属
箔からなることを特徴とするプラズマＣＶＤ装置
。[Claims for Utility Model Registration] (1) A reaction tank, an electrode and a semiconductor substrate provided in the reaction layer, a vacuum evacuation device for keeping the inside of the reaction tank in a vacuum, and a necessary gas supply to the reaction tank. A plasma CVD apparatus comprising a gas cylinder for supplying a gas and a plasma power supply for supplying the electrode, wherein a surface of the electrode on which a film formed by a reaction product is formed is covered with metal foil. (2) Utility Model Registration The plasma CVD apparatus according to claim 1, wherein the electrode itself is made of metal foil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18317387U JPH0187529U (en) | 1987-12-01 | 1987-12-01 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18317387U JPH0187529U (en) | 1987-12-01 | 1987-12-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0187529U true JPH0187529U (en) | 1989-06-09 |
Family
ID=31474605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18317387U Pending JPH0187529U (en) | 1987-12-01 | 1987-12-01 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0187529U (en) |
-
1987
- 1987-12-01 JP JP18317387U patent/JPH0187529U/ja active Pending
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