JPH0171439U - - Google Patents
Info
- Publication number
- JPH0171439U JPH0171439U JP1987168081U JP16808187U JPH0171439U JP H0171439 U JPH0171439 U JP H0171439U JP 1987168081 U JP1987168081 U JP 1987168081U JP 16808187 U JP16808187 U JP 16808187U JP H0171439 U JPH0171439 U JP H0171439U
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- reaction chamber
- lower electrode
- dry etching
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 claims 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は、本考案の実施例を示す反応室周辺の
断面図。第２図は、従来の実施例を示す反応室周
辺の断面図。
断面図。第２図は、従来の実施例を示す反応室周
辺の断面図。
Claims (1)
- 枚葉処理方式のプラズマドライエツチング装置
において、反応室の構造が、プラズマ発生部と下
部電極支持台との中間に、プラズマ遮断機構を有
することを特徴とするプラズマエツチング装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987168081U JPH0171439U (ja) | 1987-11-02 | 1987-11-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987168081U JPH0171439U (ja) | 1987-11-02 | 1987-11-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0171439U true JPH0171439U (ja) | 1989-05-12 |
Family
ID=31456947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987168081U Pending JPH0171439U (ja) | 1987-11-02 | 1987-11-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0171439U (ja) |
-
1987
- 1987-11-02 JP JP1987168081U patent/JPH0171439U/ja active Pending