JPH0159753B2 - - Google Patents
Info
- Publication number
- JPH0159753B2 JPH0159753B2 JP7757383A JP7757383A JPH0159753B2 JP H0159753 B2 JPH0159753 B2 JP H0159753B2 JP 7757383 A JP7757383 A JP 7757383A JP 7757383 A JP7757383 A JP 7757383A JP H0159753 B2 JPH0159753 B2 JP H0159753B2
- Authority
- JP
- Japan
- Prior art keywords
- active layer
- region
- oscillation
- semiconductor laser
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 42
- 239000012535 impurity Substances 0.000 claims description 35
- 230000010355 oscillation Effects 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 76
- 238000009792 diffusion process Methods 0.000 description 26
- 238000005253 cladding Methods 0.000 description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 14
- 239000010408 film Substances 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000010365 information processing Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7757383A JPS59202677A (ja) | 1983-05-04 | 1983-05-04 | 半導体レ−ザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7757383A JPS59202677A (ja) | 1983-05-04 | 1983-05-04 | 半導体レ−ザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59202677A JPS59202677A (ja) | 1984-11-16 |
| JPH0159753B2 true JPH0159753B2 (de) | 1989-12-19 |
Family
ID=13637742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7757383A Granted JPS59202677A (ja) | 1983-05-04 | 1983-05-04 | 半導体レ−ザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59202677A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0213826A3 (de) * | 1985-08-12 | 1988-03-16 | Hitachi, Ltd. | Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
| JPH01143285A (ja) * | 1987-11-28 | 1989-06-05 | Mitsubishi Electric Corp | 半導体超格子の無秩序化方法及び半導体レーザ装置 |
| US5031185A (en) * | 1988-11-17 | 1991-07-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having a disordered superlattice |
| JPH02196486A (ja) * | 1989-01-24 | 1990-08-03 | Mitsubishi Electric Corp | 半導体レーザの製造方法 |
-
1983
- 1983-05-04 JP JP7757383A patent/JPS59202677A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59202677A (ja) | 1984-11-16 |
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