JPH0159679B2 - - Google Patents

Info

Publication number
JPH0159679B2
JPH0159679B2 JP58160263A JP16026383A JPH0159679B2 JP H0159679 B2 JPH0159679 B2 JP H0159679B2 JP 58160263 A JP58160263 A JP 58160263A JP 16026383 A JP16026383 A JP 16026383A JP H0159679 B2 JPH0159679 B2 JP H0159679B2
Authority
JP
Japan
Prior art keywords
mos transistors
transistors
transistor
power supply
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58160263A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6052996A (ja
Inventor
Hideji Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58160263A priority Critical patent/JPS6052996A/ja
Publication of JPS6052996A publication Critical patent/JPS6052996A/ja
Publication of JPH0159679B2 publication Critical patent/JPH0159679B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Static Random-Access Memory (AREA)
JP58160263A 1983-09-02 1983-09-02 センスアンプ回路 Granted JPS6052996A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58160263A JPS6052996A (ja) 1983-09-02 1983-09-02 センスアンプ回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58160263A JPS6052996A (ja) 1983-09-02 1983-09-02 センスアンプ回路

Publications (2)

Publication Number Publication Date
JPS6052996A JPS6052996A (ja) 1985-03-26
JPH0159679B2 true JPH0159679B2 (enrdf_load_html_response) 1989-12-19

Family

ID=15711218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58160263A Granted JPS6052996A (ja) 1983-09-02 1983-09-02 センスアンプ回路

Country Status (1)

Country Link
JP (1) JPS6052996A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory

Also Published As

Publication number Publication date
JPS6052996A (ja) 1985-03-26

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