JPH0157506B2 - - Google Patents
Info
- Publication number
- JPH0157506B2 JPH0157506B2 JP55033022A JP3302280A JPH0157506B2 JP H0157506 B2 JPH0157506 B2 JP H0157506B2 JP 55033022 A JP55033022 A JP 55033022A JP 3302280 A JP3302280 A JP 3302280A JP H0157506 B2 JPH0157506 B2 JP H0157506B2
- Authority
- JP
- Japan
- Prior art keywords
- base
- film
- layer
- emitter
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 38
- 238000009792 diffusion process Methods 0.000 description 16
- 150000004767 nitrides Chemical class 0.000 description 9
- 238000000605 extraction Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3302280A JPS56129342A (en) | 1980-03-12 | 1980-03-12 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3302280A JPS56129342A (en) | 1980-03-12 | 1980-03-12 | Semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56129342A JPS56129342A (en) | 1981-10-09 |
| JPH0157506B2 true JPH0157506B2 (ko) | 1989-12-06 |
Family
ID=12375163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3302280A Granted JPS56129342A (en) | 1980-03-12 | 1980-03-12 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56129342A (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6218069A (ja) * | 1985-07-16 | 1987-01-27 | Toshiba Corp | 半導体装置 |
| JPH0221639A (ja) * | 1988-07-08 | 1990-01-24 | Rohm Co Ltd | 半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117579A (en) * | 1976-03-30 | 1977-10-03 | Nec Corp | Semiconductor device |
-
1980
- 1980-03-12 JP JP3302280A patent/JPS56129342A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117579A (en) * | 1976-03-30 | 1977-10-03 | Nec Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56129342A (en) | 1981-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4892837A (en) | Method for manufacturing semiconductor integrated circuit device | |
| US4933737A (en) | Polysilon contacts to IC mesas | |
| US4825281A (en) | Bipolar transistor with sidewall bare contact structure | |
| US4430793A (en) | Method of manufacturing a semiconductor device utilizing selective introduction of a dopant thru a deposited semiconductor contact layer | |
| JPH0654795B2 (ja) | 半導体集積回路装置及びその製造方法 | |
| JPH0241170B2 (ko) | ||
| US4407059A (en) | Method of producing semiconductor device | |
| US4691436A (en) | Method for fabricating a bipolar semiconductor device by undercutting and local oxidation | |
| EP0034341B1 (en) | Method for manufacturing a semiconductor device | |
| JPH0157506B2 (ko) | ||
| EP0036620B1 (en) | Semiconductor device and method for fabricating the same | |
| JPH0136710B2 (ko) | ||
| JP2538077B2 (ja) | 半導体装置の製造方法 | |
| JPS629226B2 (ko) | ||
| JPS6246072B2 (ko) | ||
| JPS6140140B2 (ko) | ||
| JPH0318738B2 (ko) | ||
| JP3194286B2 (ja) | バイポーラトランジスタの製造方法 | |
| JPH0436578B2 (ko) | ||
| JPS6152575B2 (ko) | ||
| JP3120441B2 (ja) | 半導体装置およびその製造方法 | |
| JPH0136709B2 (ko) | ||
| JPH0418461B2 (ko) | ||
| JPS62189752A (ja) | 半導体装置 | |
| JPS5950093B2 (ja) | 半導体装置の製造方法 |