JPH0152834B2 - - Google Patents

Info

Publication number
JPH0152834B2
JPH0152834B2 JP56047428A JP4742881A JPH0152834B2 JP H0152834 B2 JPH0152834 B2 JP H0152834B2 JP 56047428 A JP56047428 A JP 56047428A JP 4742881 A JP4742881 A JP 4742881A JP H0152834 B2 JPH0152834 B2 JP H0152834B2
Authority
JP
Japan
Prior art keywords
bit line
current
transistor
memory cell
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56047428A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57164489A (en
Inventor
Kazuhiro Toyoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56047428A priority Critical patent/JPS57164489A/ja
Publication of JPS57164489A publication Critical patent/JPS57164489A/ja
Publication of JPH0152834B2 publication Critical patent/JPH0152834B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Static Random-Access Memory (AREA)
JP56047428A 1981-03-31 1981-03-31 Semicondutor memory Granted JPS57164489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56047428A JPS57164489A (en) 1981-03-31 1981-03-31 Semicondutor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56047428A JPS57164489A (en) 1981-03-31 1981-03-31 Semicondutor memory

Publications (2)

Publication Number Publication Date
JPS57164489A JPS57164489A (en) 1982-10-09
JPH0152834B2 true JPH0152834B2 (fr) 1989-11-10

Family

ID=12774876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56047428A Granted JPS57164489A (en) 1981-03-31 1981-03-31 Semicondutor memory

Country Status (1)

Country Link
JP (1) JPS57164489A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60143497A (ja) * 1983-12-29 1985-07-29 Hitachi Ltd 半導体記憶装置
JPS60237699A (ja) * 1985-04-23 1985-11-26 Hitachi Ltd 半導体メモリ
US4853898A (en) * 1988-02-11 1989-08-01 Digital Equipment Corporation Bipolar ram having state dependent write current
JP2595876B2 (ja) * 1993-09-08 1997-04-02 日本電気株式会社 半導体記憶回路

Also Published As

Publication number Publication date
JPS57164489A (en) 1982-10-09

Similar Documents

Publication Publication Date Title
US4665505A (en) Write circuit for use in semiconductor storage device
JPH053080B2 (fr)
US5016214A (en) Memory cell with separate read and write paths and clamping transistors
US5644548A (en) Dynamic random access memory having bipolar and C-MOS transistor
JPS62197986A (ja) 非クロツク・スタテイツク・メモリ・アレイ
JPH0252360B2 (fr)
JPH022239B2 (fr)
JPS6331879B2 (fr)
JPH0152834B2 (fr)
JPS6028076B2 (ja) 半導体メモリの書込み回路
JPS5877092A (ja) メモリの読取り方法
JPH06168594A (ja) 半導体記憶装置
JPS58146088A (ja) メモリ回路
JPS62129996A (ja) 可変行励振を有するメモリセル
US4964081A (en) Read-while-write ram cell
US4703458A (en) Circuit for writing bipolar memory cells
JP2878036B2 (ja) 半導体記憶装置
JP3153400B2 (ja) 半導体メモリ及びセンス回路
JPH0241112B2 (fr)
JP3144797B2 (ja) データ一致検出回路を内蔵した半導体集積回路
JPS593789A (ja) 半導体メモリ
EP0131151A2 (fr) Circuit amplificateur de lecture à haute vitesse avec capacité d'inhibition
JPH0247037B2 (fr)
JP2545502B2 (ja) 記憶装置
JPS6118835B2 (fr)