JPH0151480B2 - - Google Patents

Info

Publication number
JPH0151480B2
JPH0151480B2 JP21092381A JP21092381A JPH0151480B2 JP H0151480 B2 JPH0151480 B2 JP H0151480B2 JP 21092381 A JP21092381 A JP 21092381A JP 21092381 A JP21092381 A JP 21092381A JP H0151480 B2 JPH0151480 B2 JP H0151480B2
Authority
JP
Japan
Prior art keywords
mixed crystal
ratio
vapor phase
layer
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP21092381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58115099A (ja
Inventor
Hisanori Fujita
Eiichiro Nishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP21092381A priority Critical patent/JPS58115099A/ja
Publication of JPS58115099A publication Critical patent/JPS58115099A/ja
Publication of JPH0151480B2 publication Critical patent/JPH0151480B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP21092381A 1981-12-29 1981-12-29 りん化ひ化ガリウム混晶エピタキシヤル膜の成長方法 Granted JPS58115099A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21092381A JPS58115099A (ja) 1981-12-29 1981-12-29 りん化ひ化ガリウム混晶エピタキシヤル膜の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21092381A JPS58115099A (ja) 1981-12-29 1981-12-29 りん化ひ化ガリウム混晶エピタキシヤル膜の成長方法

Publications (2)

Publication Number Publication Date
JPS58115099A JPS58115099A (ja) 1983-07-08
JPH0151480B2 true JPH0151480B2 (enExample) 1989-11-02

Family

ID=16597306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21092381A Granted JPS58115099A (ja) 1981-12-29 1981-12-29 りん化ひ化ガリウム混晶エピタキシヤル膜の成長方法

Country Status (1)

Country Link
JP (1) JPS58115099A (enExample)

Also Published As

Publication number Publication date
JPS58115099A (ja) 1983-07-08

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