JPH01500707A - 金属マイグレーションによって調整される抵抗を用いた回路 - Google Patents

金属マイグレーションによって調整される抵抗を用いた回路

Info

Publication number
JPH01500707A
JPH01500707A JP62504115A JP50411587A JPH01500707A JP H01500707 A JPH01500707 A JP H01500707A JP 62504115 A JP62504115 A JP 62504115A JP 50411587 A JP50411587 A JP 50411587A JP H01500707 A JPH01500707 A JP H01500707A
Authority
JP
Japan
Prior art keywords
coupled
input
resistor
diode
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62504115A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0568104B2 (en:Method
Inventor
スサーク・デイビッド　エム
デイビス・ウイリアム　エフ
ビーン・ロバート　エル
Original Assignee
モトローラ・インコーポレーテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by モトローラ・インコーポレーテッド filed Critical モトローラ・インコーポレーテッド
Publication of JPH01500707A publication Critical patent/JPH01500707A/ja
Publication of JPH0568104B2 publication Critical patent/JPH0568104B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H10W44/401—

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP62504115A 1986-09-18 1987-06-29 金属マイグレーションによって調整される抵抗を用いた回路 Granted JPH01500707A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/908,858 US4725791A (en) 1986-09-18 1986-09-18 Circuit utilizing resistors trimmed by metal migration
US908,858 1986-09-18

Publications (2)

Publication Number Publication Date
JPH01500707A true JPH01500707A (ja) 1989-03-09
JPH0568104B2 JPH0568104B2 (en:Method) 1993-09-28

Family

ID=25426332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62504115A Granted JPH01500707A (ja) 1986-09-18 1987-06-29 金属マイグレーションによって調整される抵抗を用いた回路

Country Status (7)

Country Link
US (1) US4725791A (en:Method)
EP (1) EP0283479B1 (en:Method)
JP (1) JPH01500707A (en:Method)
KR (1) KR940007975B1 (en:Method)
DE (1) DE3779751T2 (en:Method)
HK (1) HK82095A (en:Method)
WO (1) WO1988002197A1 (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021085475A1 (ja) * 2019-11-01 2021-05-06 国立研究開発法人科学技術振興機構 電流センサおよび電力変換回路

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945762A (en) * 1989-01-24 1990-08-07 Sensym, Inc. Silicon sensor with trimmable wheatstone bridge
US5679275A (en) * 1995-07-03 1997-10-21 Motorola, Inc. Circuit and method of modifying characteristics of a utilization circuit
US6026013A (en) * 1998-09-30 2000-02-15 Motorola, Inc. Quantum random address memory
EP1669832A1 (en) * 2004-12-03 2006-06-14 Dialog Semiconductor GmbH An accurate high current circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606781A (en) * 1984-10-18 1986-08-19 Motorola, Inc. Method for resistor trimming by metal migration

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1408341A (fr) * 1964-07-02 1965-08-13 Materiel Electrique S W Le Amplificateur différentiel
US3870967A (en) * 1972-05-22 1975-03-11 Motorola Inc Method and apparatus for adjustment of offset voltage of a differential amplifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4606781A (en) * 1984-10-18 1986-08-19 Motorola, Inc. Method for resistor trimming by metal migration

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021085475A1 (ja) * 2019-11-01 2021-05-06 国立研究開発法人科学技術振興機構 電流センサおよび電力変換回路
JPWO2021085475A1 (en:Method) * 2019-11-01 2021-05-06
US12095348B2 (en) 2019-11-01 2024-09-17 Japan Science And Technology Agency Current sensor and power conversion circuit

Also Published As

Publication number Publication date
HK82095A (en) 1995-06-01
EP0283479A4 (en) 1989-01-18
KR880702003A (ko) 1988-11-07
JPH0568104B2 (en:Method) 1993-09-28
DE3779751D1 (de) 1992-07-16
WO1988002197A1 (en) 1988-03-24
US4725791A (en) 1988-02-16
KR940007975B1 (ko) 1994-08-31
EP0283479A1 (en) 1988-09-28
EP0283479B1 (en) 1992-06-10
DE3779751T2 (de) 1993-02-04

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