JPH0147906B2 - - Google Patents
Info
- Publication number
- JPH0147906B2 JPH0147906B2 JP55043879A JP4387980A JPH0147906B2 JP H0147906 B2 JPH0147906 B2 JP H0147906B2 JP 55043879 A JP55043879 A JP 55043879A JP 4387980 A JP4387980 A JP 4387980A JP H0147906 B2 JPH0147906 B2 JP H0147906B2
- Authority
- JP
- Japan
- Prior art keywords
- offset
- region
- insulating film
- drain
- offset region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 7
- 238000009825 accumulation Methods 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 11
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 3
- -1 phosphorus ions Chemical class 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-RNFDNDRNSA-N silicon-32 atom Chemical compound [32Si] XUIMIQQOPSSXEZ-RNFDNDRNSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4387980A JPS56140665A (en) | 1980-04-03 | 1980-04-03 | Nonvolatile memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4387980A JPS56140665A (en) | 1980-04-03 | 1980-04-03 | Nonvolatile memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56140665A JPS56140665A (en) | 1981-11-04 |
| JPH0147906B2 true JPH0147906B2 (US06256357-20010703-M00001.png) | 1989-10-17 |
Family
ID=12675982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4387980A Granted JPS56140665A (en) | 1980-04-03 | 1980-04-03 | Nonvolatile memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56140665A (US06256357-20010703-M00001.png) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4960876A (US06256357-20010703-M00001.png) * | 1972-10-16 | 1974-06-13 | ||
| JPS509388A (US06256357-20010703-M00001.png) * | 1973-05-22 | 1975-01-30 |
-
1980
- 1980-04-03 JP JP4387980A patent/JPS56140665A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4960876A (US06256357-20010703-M00001.png) * | 1972-10-16 | 1974-06-13 | ||
| JPS509388A (US06256357-20010703-M00001.png) * | 1973-05-22 | 1975-01-30 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56140665A (en) | 1981-11-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5429965A (en) | Method for manufacturing a semiconductor memory | |
| US6777282B2 (en) | Method of manufacturing a semiconductor memory device having a memory cell portion including MISFETs with a floating gate and a peripheral circuit portion with MISFETs | |
| KR100221062B1 (ko) | 플래시메모리 및 그 제조방법 | |
| JP2978477B1 (ja) | 半導体集積回路装置およびその製造方法 | |
| JP2555027B2 (ja) | 半導体記憶装置 | |
| JP3240999B2 (ja) | 半導体記憶装置及びその製造方法 | |
| JPH07221209A (ja) | プログラム用の高い熱い電子注入効率のための浮遊ゲートとドレイン間にギャップを有するフラッシュｅｅｐｒｏｍセル | |
| USRE37959E1 (en) | Semiconductor integrated circuit device and method of manufacturing the same | |
| JP3630491B2 (ja) | 半導体装置 | |
| JP2819975B2 (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
| JPH07130894A (ja) | Ｅｅｐｒｏｍフラッシュメモリセル、メモリデバイスおよびこれらの製造方法 | |
| JP2002118184A (ja) | 不揮発性半導体記憶装置の動作方法 | |
| JP2004533126A (ja) | トランジスタ構成、トランジスタ構成をデータメモリとして動作するための方法、およびトランジスタ構成製造するための方法 | |
| JPH06104451A (ja) | 不揮発性半導体記憶装置 | |
| JPH0147906B2 (US06256357-20010703-M00001.png) | ||
| JPH0132673B2 (US06256357-20010703-M00001.png) | ||
| JPH02295169A (ja) | 不揮発性半導体記憶装置 | |
| JP3185746B2 (ja) | 不揮発性半導体記憶装置 | |
| JPH0450754B2 (US06256357-20010703-M00001.png) | ||
| JP3389003B2 (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
| JPS584460B2 (ja) | ハンドウタイキオクソウチ | |
| JPS6286866A (ja) | 不揮発性半導体記憶装置 | |
| JP2633547B2 (ja) | 半導体記憶装置およびその製造方法 | |
| JPH0555599A (ja) | 半導体装置 | |
| JPH0555600A (ja) | 半導体不揮発性記憶装置 |
