JPH0147012B2 - - Google Patents
Info
- Publication number
- JPH0147012B2 JPH0147012B2 JP54137749A JP13774979A JPH0147012B2 JP H0147012 B2 JPH0147012 B2 JP H0147012B2 JP 54137749 A JP54137749 A JP 54137749A JP 13774979 A JP13774979 A JP 13774979A JP H0147012 B2 JPH0147012 B2 JP H0147012B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- melting point
- point metal
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 61
- 229910052710 silicon Inorganic materials 0.000 claims description 61
- 239000010703 silicon Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 23
- 238000002844 melting Methods 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 230000008018 melting Effects 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- 229910021332 silicide Inorganic materials 0.000 claims description 13
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 13
- 238000007740 vapor deposition Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 229910016006 MoSi Inorganic materials 0.000 description 17
- 238000001704 evaporation Methods 0.000 description 9
- 230000008020 evaporation Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- -1 arsenic ions Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13774979A JPS5662339A (en) | 1979-10-26 | 1979-10-26 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13774979A JPS5662339A (en) | 1979-10-26 | 1979-10-26 | Production of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5662339A JPS5662339A (en) | 1981-05-28 |
| JPH0147012B2 true JPH0147012B2 (US07754267-20100713-C00017.png) | 1989-10-12 |
Family
ID=15205925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13774979A Granted JPS5662339A (en) | 1979-10-26 | 1979-10-26 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5662339A (US07754267-20100713-C00017.png) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4617071A (en) * | 1981-10-27 | 1986-10-14 | Fairchild Semiconductor Corporation | Method of fabricating electrically connected regions of opposite conductivity type in a semiconductor structure |
| JPS59220919A (ja) * | 1983-05-31 | 1984-12-12 | Toshiba Corp | 半導体装置の製造方法 |
| JPS6057974A (ja) * | 1983-09-09 | 1985-04-03 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS63207179A (ja) * | 1987-02-24 | 1988-08-26 | Seikosha Co Ltd | 半導体装置の製造方法 |
| JPH0226021A (ja) * | 1988-07-14 | 1990-01-29 | Matsushita Electron Corp | 多層配線の形成方法 |
| JPH02292866A (ja) * | 1989-05-02 | 1990-12-04 | Nec Corp | Ｍｉｓ型半導体装置の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4944797A (US07754267-20100713-C00017.png) * | 1972-06-19 | 1974-04-27 | ||
| JPS5413283A (en) * | 1977-06-30 | 1979-01-31 | Ibm | Method of forming metal silicide layer on substrate |
-
1979
- 1979-10-26 JP JP13774979A patent/JPS5662339A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4944797A (US07754267-20100713-C00017.png) * | 1972-06-19 | 1974-04-27 | ||
| JPS5413283A (en) * | 1977-06-30 | 1979-01-31 | Ibm | Method of forming metal silicide layer on substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5662339A (en) | 1981-05-28 |
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