JPH0145904B2 - - Google Patents
Info
- Publication number
- JPH0145904B2 JPH0145904B2 JP57101480A JP10148082A JPH0145904B2 JP H0145904 B2 JPH0145904 B2 JP H0145904B2 JP 57101480 A JP57101480 A JP 57101480A JP 10148082 A JP10148082 A JP 10148082A JP H0145904 B2 JPH0145904 B2 JP H0145904B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- polyimide material
- etching
- polyimide
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004642 Polyimide Substances 0.000 claims description 62
- 229920001721 polyimide Polymers 0.000 claims description 62
- 239000000463 material Substances 0.000 claims description 57
- 238000005530 etching Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 21
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 60
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- 239000003153 chemical reaction reagent Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920005575 poly(amic acid) Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- -1 strong bases Chemical compound 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
- B26F3/00—Severing by means other than cutting; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Polymers & Plastics (AREA)
- Forests & Forestry (AREA)
- Mechanical Engineering (AREA)
- Weting (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/299,370 US4353778A (en) | 1981-09-04 | 1981-09-04 | Method of etching polyimide |
| US299370 | 1994-09-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5843453A JPS5843453A (ja) | 1983-03-14 |
| JPH0145904B2 true JPH0145904B2 (cg-RX-API-DMAC7.html) | 1989-10-05 |
Family
ID=23154488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57101480A Granted JPS5843453A (ja) | 1981-09-04 | 1982-06-15 | ポリイミド材料の食刻方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4353778A (cg-RX-API-DMAC7.html) |
| EP (1) | EP0073910B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JPS5843453A (cg-RX-API-DMAC7.html) |
| CA (1) | CA1155736A (cg-RX-API-DMAC7.html) |
| DE (1) | DE3279207D1 (cg-RX-API-DMAC7.html) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59182531A (ja) * | 1983-04-01 | 1984-10-17 | Hitachi Micro Comput Eng Ltd | 半導体装置における絶縁膜加工法 |
| US4656050A (en) * | 1983-11-30 | 1987-04-07 | International Business Machines Corporation | Method of producing electronic components utilizing cured vinyl and/or acetylene terminated copolymers |
| US4699803A (en) * | 1983-11-30 | 1987-10-13 | International Business Machines Corporation | Method for forming electrical components comprising cured vinyl and/or acetylene terminated copolymers |
| US4606998A (en) * | 1985-04-30 | 1986-08-19 | International Business Machines Corporation | Barrierless high-temperature lift-off process |
| GB8523373D0 (en) * | 1985-09-21 | 1985-10-23 | Stc Plc | Via profiling in integrated circuits |
| JPH0727217B2 (ja) * | 1985-09-30 | 1995-03-29 | 松下電子工業株式会社 | 基板上へのレジストパタ−ン形成方法 |
| US4830706A (en) * | 1986-10-06 | 1989-05-16 | International Business Machines Corporation | Method of making sloped vias |
| JPH0626201B2 (ja) * | 1987-10-15 | 1994-04-06 | 富士通株式会社 | 半導体装置の製造方法 |
| US4883744A (en) * | 1988-05-17 | 1989-11-28 | International Business Machines Corporation | Forming a polymide pattern on a substrate |
| US4908096A (en) * | 1988-06-24 | 1990-03-13 | Allied-Signal Inc. | Photodefinable interlevel dielectrics |
| US4846929A (en) * | 1988-07-13 | 1989-07-11 | Ibm Corporation | Wet etching of thermally or chemically cured polyimide |
| US4857143A (en) * | 1988-12-16 | 1989-08-15 | International Business Machines Corp. | Wet etching of cured polyimide |
| US5242713A (en) * | 1988-12-23 | 1993-09-07 | International Business Machines Corporation | Method for conditioning an organic polymeric material |
| GB2226991A (en) * | 1989-01-13 | 1990-07-18 | Ibm | Etching organic polymeric materials |
| US5217849A (en) * | 1989-08-28 | 1993-06-08 | Sumitomo Metal Mining Company Limited | Process for making a two-layer film carrier |
| US5470693A (en) * | 1992-02-18 | 1995-11-28 | International Business Machines Corporation | Method of forming patterned polyimide films |
| JPH05279752A (ja) * | 1992-03-31 | 1993-10-26 | Kawasaki Steel Corp | 薄帯の連続焼鈍方法及び装置 |
| US6221567B1 (en) * | 1998-01-14 | 2001-04-24 | Fujitsu Limited | Method of patterning polyamic acid layers |
| US6557253B1 (en) * | 1998-02-09 | 2003-05-06 | Tessera, Inc. | Method of making components with releasable leads |
| TWI270965B (en) * | 2004-10-14 | 2007-01-11 | Advanced Semiconductor Eng | Manufacturing method of passivation layer on wafer and manufacturing method of bumps on wafer |
| US20100071765A1 (en) * | 2008-09-19 | 2010-03-25 | Peter Cousins | Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer |
| TW201026513A (en) * | 2009-01-08 | 2010-07-16 | Univ Nat Cheng Kung | Imprinting process of polyimide |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3767493A (en) * | 1971-06-17 | 1973-10-23 | Ibm | Two-step photo-etching method for semiconductors |
| US4113550A (en) * | 1974-08-23 | 1978-09-12 | Hitachi, Ltd. | Method for fabricating semiconductor device and etchant for polymer resin |
| DE2638799C3 (de) * | 1976-08-27 | 1981-12-03 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zur Verbesserung der Haftung von metallischen Leiterzügen auf Polyimidschichten in integrierten Schaltungen |
-
1981
- 1981-09-04 US US06/299,370 patent/US4353778A/en not_active Expired - Lifetime
-
1982
- 1982-06-15 JP JP57101480A patent/JPS5843453A/ja active Granted
- 1982-07-15 CA CA000407334A patent/CA1155736A/en not_active Expired
- 1982-07-16 EP EP82106403A patent/EP0073910B1/en not_active Expired
- 1982-07-16 DE DE8282106403T patent/DE3279207D1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0073910A3 (en) | 1986-03-19 |
| CA1155736A (en) | 1983-10-25 |
| DE3279207D1 (en) | 1988-12-15 |
| EP0073910A2 (en) | 1983-03-16 |
| JPS5843453A (ja) | 1983-03-14 |
| EP0073910B1 (en) | 1988-11-09 |
| US4353778A (en) | 1982-10-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0145904B2 (cg-RX-API-DMAC7.html) | ||
| US4519872A (en) | Use of depolymerizable polymers in the fabrication of lift-off structure for multilevel metal processes | |
| US4920639A (en) | Method of making a multilevel electrical airbridge interconnect | |
| US4152195A (en) | Method of improving the adherence of metallic conductive lines on polyimide layers | |
| US3985597A (en) | Process for forming passivated metal interconnection system with a planar surface | |
| EP0043458B1 (en) | Process for forming a metallurgy interconnection system | |
| JPS6350860B2 (cg-RX-API-DMAC7.html) | ||
| US4339526A (en) | Acetylene terminated, branched polyphenylene resist and protective coating for integrated circuit devices | |
| JP2553079B2 (ja) | ヴァイア形成方法 | |
| JPS63126297A (ja) | 多層プリント配線板並びにそれの製造方法と無電解めっき用絶縁剤 | |
| EP0342393B1 (en) | Process for forming a polyimide pattern on a substrate | |
| US4975347A (en) | Method for manufacturing heat-stable structured layers from photopolymers which are addition reaction products of olefinic unsaturated monoisocyanates and phenol-formaldehyde resins | |
| JPH06268378A (ja) | 多層配線基板のビアホールの形成方法 | |
| JPS6337694A (ja) | 回路基板の製造方法 | |
| JP2586745B2 (ja) | 印刷配線板の製造方法 | |
| KR100372995B1 (ko) | 반도체기판위에목적하는패턴의수지막을형성하는방법,반도체칩,반도체패키지,및레지스트상박리액 | |
| JPS625356B2 (cg-RX-API-DMAC7.html) | ||
| JPH06275511A (ja) | ポリイミドパターンの形成方法 | |
| JP2894997B2 (ja) | 印刷配線板の製造方法 | |
| JPS5867097A (ja) | 印刷配線板の製造法 | |
| JPS6035727A (ja) | パタ−ンの製造法 | |
| JPH02135352A (ja) | 剥離液 | |
| JPS60213086A (ja) | 回路基板の絶縁層形成方法 | |
| JPH0367355B2 (cg-RX-API-DMAC7.html) | ||
| JPS59180545A (ja) | 乾式現像用ポジ型レジスト材料 |