JPH0145739B2 - - Google Patents
Info
- Publication number
- JPH0145739B2 JPH0145739B2 JP17567281A JP17567281A JPH0145739B2 JP H0145739 B2 JPH0145739 B2 JP H0145739B2 JP 17567281 A JP17567281 A JP 17567281A JP 17567281 A JP17567281 A JP 17567281A JP H0145739 B2 JPH0145739 B2 JP H0145739B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- taper
- resist
- mask
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7035—Proximity or contact printers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56175672A JPS5877231A (ja) | 1981-11-04 | 1981-11-04 | レジストパタ−ンのテ−パ形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56175672A JPS5877231A (ja) | 1981-11-04 | 1981-11-04 | レジストパタ−ンのテ−パ形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5877231A JPS5877231A (ja) | 1983-05-10 |
JPH0145739B2 true JPH0145739B2 (enrdf_load_stackoverflow) | 1989-10-04 |
Family
ID=16000211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56175672A Granted JPS5877231A (ja) | 1981-11-04 | 1981-11-04 | レジストパタ−ンのテ−パ形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5877231A (enrdf_load_stackoverflow) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60135949A (ja) * | 1983-12-23 | 1985-07-19 | Matsushita Electric Works Ltd | 光成形体の製造方法 |
JPS61111533A (ja) * | 1984-11-05 | 1986-05-29 | Mitsubishi Electric Corp | 感光性樹脂のパタ−ン形成方法 |
JPH0691066B2 (ja) * | 1988-03-25 | 1994-11-14 | 日本電信電話株式会社 | 感光性有機樹脂膜の形成方法 |
KR100313191B1 (ko) * | 1993-10-13 | 2002-04-06 | 사와무라 시코 | 초점평가용패턴및초점평가방법 |
US6114071A (en) * | 1997-11-24 | 2000-09-05 | Asml Masktools Netherlands B.V. | Method of fine feature edge tuning with optically-halftoned mask |
JP4565711B2 (ja) * | 2000-07-26 | 2010-10-20 | リコー光学株式会社 | 濃度分布マスクの製造方法 |
JP4521694B2 (ja) * | 2004-03-09 | 2010-08-11 | Hoya株式会社 | グレートーンマスク及び薄膜トランジスタの製造方法 |
JP5194925B2 (ja) * | 2008-03-25 | 2013-05-08 | オムロン株式会社 | レジスト露光方法 |
-
1981
- 1981-11-04 JP JP56175672A patent/JPS5877231A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5877231A (ja) | 1983-05-10 |
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