JPH0145626B2 - - Google Patents

Info

Publication number
JPH0145626B2
JPH0145626B2 JP56116189A JP11618981A JPH0145626B2 JP H0145626 B2 JPH0145626 B2 JP H0145626B2 JP 56116189 A JP56116189 A JP 56116189A JP 11618981 A JP11618981 A JP 11618981A JP H0145626 B2 JPH0145626 B2 JP H0145626B2
Authority
JP
Japan
Prior art keywords
light source
mask
photoreceptor
exposed
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56116189A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5817445A (ja
Inventor
Yoshio Yazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OKU SEISAKUSHO CO Ltd
Original Assignee
OKU SEISAKUSHO CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OKU SEISAKUSHO CO Ltd filed Critical OKU SEISAKUSHO CO Ltd
Priority to JP56116189A priority Critical patent/JPS5817445A/ja
Publication of JPS5817445A publication Critical patent/JPS5817445A/ja
Publication of JPH0145626B2 publication Critical patent/JPH0145626B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56116189A 1981-07-24 1981-07-24 露光方法 Granted JPS5817445A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56116189A JPS5817445A (ja) 1981-07-24 1981-07-24 露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56116189A JPS5817445A (ja) 1981-07-24 1981-07-24 露光方法

Publications (2)

Publication Number Publication Date
JPS5817445A JPS5817445A (ja) 1983-02-01
JPH0145626B2 true JPH0145626B2 (enrdf_load_stackoverflow) 1989-10-04

Family

ID=14681025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56116189A Granted JPS5817445A (ja) 1981-07-24 1981-07-24 露光方法

Country Status (1)

Country Link
JP (1) JPS5817445A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6064353A (ja) * 1983-09-20 1985-04-12 Ushio Inc 放電灯の照射方法
JPH0196656A (ja) * 1987-10-09 1989-04-14 Omron Tateisi Electron Co 荷電ビーム露光装置
JP2008129558A (ja) * 2006-11-27 2008-06-05 Keio Gijuku 露光光源として光源アレイを用いた曲面製造方法

Also Published As

Publication number Publication date
JPS5817445A (ja) 1983-02-01

Similar Documents

Publication Publication Date Title
JPS57200042A (en) Exposure method for chemically machinable photosensitive glass
JPS5541739A (en) Micro-projection type mask alignment device
JPH0145626B2 (enrdf_load_stackoverflow)
JPS561536A (en) Manufacture of resist pattern
SE8800836L (sv) Anordning for steg- och repetitionssystem for direkt exponering for framstellning eller behandling av halvledarskivor
US2991705A (en) Apparatus for applying reference grid lines to unexposed photographic film
JPS55128832A (en) Method of making minute pattern
JPS57162336A (en) Coating method of resist on wafer
KR950012570A (ko) 전자비임묘화장치 및 그 장치를 이용한 묘화방법
JPS5752052A (en) Heat treatment of photosensitive resin
JPS5676530A (en) Exposure of resist
JPS5255867A (en) Exposure method
SU574413A1 (ru) Способ изготовлени крупногабаритных изделий из светочувствительного стекла
JPS5494882A (en) X-ray exposure apparatus
US4415955A (en) Irradiation apparatus utilizing linear radiation sources
JPS5339060A (en) Lot number marking method to wafers
JPS55131730A (en) Concaved echelette grating and its process
JPS5621328A (en) Method of making pattern
JPS52130052A (en) Irradiation width-variable irradiating device
JPS57207338A (en) Method for treating resist film for electron beam
JPS6487169A (en) Laser marking device
JPS57114251A (en) Manufacture of semiconductor device
GB1500959A (en) Photographic exposure device
JPH01198026A (ja) 半導体ウェハの露光装置
JPS5732444A (en) Formation of resist pattern